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Details, datasheet, quote on part number:NTD23N03R
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Datasheet text preview:
NTB23N03R Power MOSFET 23 Amps, 25 Volts
N-Channel D2PAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Typical Applications http://onsemi.com
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Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High-Ef ficiency DC-DC Converters
23 AMPERES, 25 VOLTS RDS(on) = 32 mW (Typ)
N-CHANNEL D
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25°C, Limited by Chip - Continuous @ TA = 25°C, Limited by Package - Single Pulse (tp = 10 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS ID ID IDM PD TJ, Tstg Rq J C Rq J A Rq J A TL Value 25 ±20 23 6.0 60 TBD -55 to 150 TBD W °C °C/W Unit Vdc Vdc A
G S
4 1 2 3 D2PAK CASE 418B STYLE 2
MARKING DIAGRAM & PIN ASSIGNMENTS
260 °C 4 Drain T23 N03 YWW 1 Gate 3 Source
1. When surface mounted to an FR4 board using 1 pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in2).
2 Drain
T23N03 = Specific Device Code Y = Year WW = Work Week
ORDERING INFORMATION
Device NTB23N03R NTB23N03RT4 Package D2PAK D2PAK Shipping 50 Units/Rail 800/Tape & Reel
© Semiconductor Components Industries, LLC, 2003
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March, 2003 - Rev. 0
Publication Order Number: NTB23N03R/D
NTB23N03R
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristics OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C) Gate-Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 3) (VGS = 4.5 Vdc, ID = 6 Adc) (VGS = 10 Vdc, ID = 6 Adc) Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 6 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time Gate Charge (VGS = 4.5 Vdc, ID = 6 Adc, VDS = 10 Vdc) (Note 3) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 6 Adc, VGS = 0 Vdc) (Note 3) (IS = 6 Adc, VGS = 0 Vdc, TJ = 125°C) VSD trr (IS = 6 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. ta tb QRR 0.87 0.74 8.7 5.2 3.5 0.003 1.2 mC ns Vdc (VGS = 10 Vdc, VDD = 10 Vdc, ID = 6 Adc, RG = 3 W) td(on) tr td(off) tf QT Q1 Q2 2.0 14.9 9.9 2.0 3.76 1.7 1.6 nC ns (VDS = 20 Vdc, VGS = 0 V, f = 1 MHz) , , ) Ci s s Co s s Crss 225 108 48 pF VGS(th) 1.0 RD S ( o n ) gFS 14 50.3 32.3 60 45 Mhos 1.8 2.0 Vdc mV/°C mW V(br)DSS 25 IDSS IGSS 1.0 10 ±100 nAdc 28 Vdc mV/°C mAdc Symbol Min Typ Max Unit
Reverse Recovery Time
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NTB23N03R
20 10 V ID, DRAIN CURRENT (AMPS) 16 4.5 V 8V 6V 5V 12 20 4V ID, DRAIN CURRENT (AMPS) VDS 10 V 16
3.5 V
12
8 3V 4 VGS = 2.5 V 0 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
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TJ = 25°C TJ = 125°C 0 1 2 3 TJ = -55°C 4 5 6
4 0
VGS, GATE-T O-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE () RDS(on), DRAIN-TO-SOURCE RESISTANCE ()
Figure 2. Transfer Characteristics
0.20 VGS = 10 V 0.16
0.20 VGS = 4.5 V 0.16
0.12
0.12 TJ = 125°C 0.08 TJ = 25°C 0.04 0 0 4 8 12 16 20 ID, DRAIN CURRENT (AMPS) TJ = -55°C
0.08 TJ = 125°C 0.04 0 0 4 8 12 16 20 ID, DRAIN CURRENT (AMPS) TJ = 25°C TJ = -55°C
Figure 3. On-Resistance versus Drain Current and Temperature
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 10 -25 0 25 50 75 100 125 150 0 ID = 6 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 10,000
Figure 4. On-Resistance versus Drain Current and Temperature
VGS = 0 V
TJ = 150°C
100
TJ = 125°C
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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