|
Details, datasheet, quote on part number:NTD24N06
| |
| Part: | NTD24N06 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | Power MOSFET 24 Amps, 60 Volts N Channel Dpak, Package: Dpak, Pins=3 |
| Company: | ON Semiconductor |
| Datasheet: | Download NTD24N06 datasheet File size : 86 kB |
| Request For quote: | Find where to buy NTD24N06
|
| |
Datasheet text preview:
NTD24N06 Power MOSFET 24 Amps, 60 Volts
NChannel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Typical Applications http://onsemi.com
· · · ·
Power Supplies Converters Power Motor Controls Bridge Circuits
24 AMPERES 60 VOLTS RDS(on) = 0.042
NChannel D Value 60 60 "20 "30 24 10 72 62.5 0.42 1.88 1.36 55 to +175 162 Adc Apk W W/°C W W °C mJ NTD24N06 Y WW = Device Code = Year = Work Week 4 12 3 DPAK CASE 369A STYLE 2 YWW NTD 24N06 Unit Vdc Vdc Vdc VGS VGS ID ID IDM PD S G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating DraintoSource Voltage DraintoGate Voltage (RGS = 10 M) GatetoSource Voltage Continuous Nonrepetitive (tpv10 ms) Drain Current Continuous @ TA = 25°C Continuous @ TA = 100°C Single Pulse (tpv10 µs) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1.) Total Power Dissipation @ TA = 25°C (Note 2.) Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) = 18 A, VDS = 60 Vdc) Thermal Resistance JunctiontoCase JunctiontoAmbient (Note 1.) JunctiontoAmbient (Note 2.) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR
MARKING DIAGRAM
TJ, Tstg EAS
°C/W RJC RJA RJA TL 2.4 80 110 260 °C
PIN ASSIGNMENT
4 Drain
1. When surface mounted to an FR4 board using 1 pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in2).
1 Gate
2 Drain
3 Source
ORDERING INFORMATION
Device NTD24N06 NTD24N061 NTD24N06T4 Package DPAK DPAK DPAK Shipping 75 Units/Rail 75 Units/Rail 2500/Tape & Reel
© Semiconductor Components Industries, LLC, 2001
1
July, 2001 Rev. 0
Publication Order Number: NTD24N06/D
NTD24N06
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3.) (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) GateBody Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3.) Gate Threshold Voltage (Note 3.) (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note 3.) (VGS = 10 Vdc, ID = 10 Adc) (VGS = 10 Vdc, ID = 12 Adc) Static DraintoSource OnResistance (Note 3.) (VGS = 10 Vdc, ID = 20 Adc) (VGS = 10 Vdc, ID = 24 Adc) (VGS = 10 Vdc, ID = 12 Adc, TJ = 150°C) Forward Transconductance (Note 3.) (VDS = 7.0 Vdc, ID = 12 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4.) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 24 Adc, 48 Vd 24 Ad VGS = 10 Vdc) (Note 3.) SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (IS = 20 Adc, VGS = 0 Vdc) (Note 3.) (IS = 24 Adc, VGS = 0 Vdc) (IS = 24 Adc, VGS = 0 Vdc, TJ = 150°C) (IS = 24 Adc, VGS = 0 Vdc, 24 Ad Vd dIS/dt = 100 A/µs) (Note 3.) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. VSD 0.95 1.0 0.89 49 35 13 0.096 1.15 µC Vdc (VDD = 30 Vdc, ID = 24 Adc, VGS = 10 Vdc, 10 Vdc RG = 9.1 ) (Note 3.) td(on) tr td(off) tf QT Q1 Q2 10 24 25 27 24 5.0 11.5 20 50 50 60 48 nC ns (VDS = 25 Vd VGS = 0 Vdc, 25 Vdc, Vd f = 1.0 MHz) Ciss Coss Cr s s 846 252 68 1200 350 95 pF VGS(th) 2.0 RDS(on) VDS(on) gFS 0.8 0.8 0.7 15 1.15 mhos 32 32 42 Vdc 3.03 7.0 4.0 Vdc mV/°C m V(BR)DSS 60 IDSS IGSS 1.0 10 ±100 nAdc 71.1 70.4 Vdc mV/°C µAdc Symbol Min Typ Max Unit
Reverse Recovery Time
trr ta tb Q RR
ns
http://onsemi.com
2
NTD24N06
50 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) VGS = 10 V 40 9V 8V 6V 7V
50 VDS 10 V 40
30
30
20
5.5 V 5V 4.5 V
20 TJ = 25°C 10 TJ = 100°C 0 2 3 4 5 TJ = 55°C 6 7 8
10
0
0
1
2
3
4
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
RDS(on), DRAINTOSOURCE RESISTANCE () RDS(on), DRAINTOSOURCE RESISTANCE ()
Figure 2. Transfer Characteristics
0.08 VGS = 10 V 0.06
0.08 VGS = 15 V 0.06 TJ = 100°C 0.04 TJ = 25°C TJ = 55°C
TJ = 100°C
0.04
TJ = 25°C TJ = 55°C
0.02
0.02
0
0
10
20
30
40
50
0
0
10
20
30
40
50
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus GatetoSource Voltage
RDS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 50 25 1 0 25 50 75 100 125 150 175 0 10000 ID = 12 A VGS = 10 V IDSS, LEAKAGE (nA) 1000
Figure 4. OnResistance versus Drain Current and Gate Voltage
VGS = 0 V TJ = 150°C
100 TJ = 100°C 10
10
20
30
40
50
60
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 5. OnResistance Variation with Temperature
Figure 6. DraintoSource Leakage Current versus Voltage
http://onsemi.com
3
|
|
