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Details, datasheet, quote on part number:NTD25P03L
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Datasheet text preview:
NTD25P03LT4 Advance Information Power MOSFET
25 Amps, 30 Volts, Logic Level P-Channel DPAK
Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source-to-drain diode recovery time is comparable to a discrete fast recovery diode.
Typical Applications http://onsemi.com
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PWM Motor Controls Power Supplies Converters Bridge Circuits
MOSFET 25 AMPERES 30 VOLTS 51 mW @ VGS = 5 V (Typ)
P-Channel D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous - Non-Repetitive (tp 10 ms) Drain Current - Continuous @ TA = 25°C - Single Pulse (tp 10 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, Peak IL = 20 Apk, L = 1.0 mH, RG = 25 ) Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS VGSM ID IDM PD TJ, Tstg EAS Value 30 "15 "20 25 75 75 -55 to +150 200 Unit Vdc Vdc Vpk Adc Apk Watts °C mJ G
S
4 12 3 DPAK CASE 369A STYLE 2
°C/W Rq J C Rq J A Rq J A TL 1.65 67 120 260 °C
MARKING DIAGRAM & PIN ASSIGNMENTS
Gate 1 Drain 2 Source 3 YWW 25P 03L
Drain 4
1. When surface mounted to an FR4 board using 1 pad size (Cu Area 1.127 in2) 2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu Area 0.412 in2)
This document contains information on a new product. Specifications and information herein are subject to change without notice.
25P03L = Device Code Y = Year WW = Work Week
ORDERING INFORMATION
Device NTD25P03L NTD25P03L1 NTD25P03LT4 Package DPAK DPAK DPAK Shipping 75 Units/Rail 75 Units/Rail 2500/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
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November, 2002 - Rev. 0
Publication Order Number: NTD25P03LT4/D
NTD25P03LT4
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 µA) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate-Body Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static Drain-to-Source On-State Resistance (VGS = 5.0 Vdc, ID = 12.5 Adc) (VGS = 5.0 Vdc, ID = 25 Adc) (VGS = 4.0 Vdc, ID = 10 Adc) Forward Transconductance (VDS = 8.0 Vdc, ID = 12.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 3 & 4) Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time Gate Charge (VDS = 24 Vdc, VGS = 5.0 Vdc, 5 0 Vdc ID = 25 A) (VDD = 15 Vdc, ID = 25 A, VGS = 5 0 V 5.0 V, RG = 1.3 ) td(on) tr td(off) tf QT Q1 Q2 Q3 BODY-DRAIN DIODE RATINGS (Note 3) Diode Forward On-Voltage Reverse Recovery Time (IS = 25 A, VGS = 0 V, 25 A V dIS/dt = 100 A/µs) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperature. (IS = 25 Adc, VGS = 0 V) (IS = 25 Adc, VGS = 0 V, TJ = 125°C) VSD trr ta tb QRR 1.0 0.9 35 20 14 0.035 1.5 µC Vdc ns 9.0 37 15 16 15 3.0 9.0 7.0 20 75 30 55 20 nC ns (VDS = 25 Vdc, VGS = 0 Vdc, 25 Vd Vd f = 1.0 MHz) Ci s s Co s s Crss 900 290 105 1260 410 210 pF VGS(th) 1.0 RD S ( o n ) gFS 13 0.051 0.056 0.065 0.072 0.080 0.090 Mhos 1.6 4.0 2.0 Vdc mV/°C V(BR)DSS 30 IDSS IGSS 100 1.0 100 nAdc 24 Vdc mV/°C µAdc Symbol Min Typ Max Unit
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NTD25P03LT4
TYPICAL MOSFET ELECTRICAL CHARACTERISTICS
50 VGS = 10 V ID, DRAIN CURRENT (AMPS) 9V 40 7V 8V 4.5 V 6V 50 ID, DRAIN CURRENT (AMPS) VDS 5 V 40
TJ = 25°C 5V
TJ = -40°C TJ = 25°C TJ = 125°C
30
30
20
4V 3.5 V
20
10 0 0 1 2 3 4 3V 2.5 V 5
10 0 1 2 3 4 5 6 VGS, GATE-T O-SOURCE VOLTAGE (VOLTS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE () RDS(on), DRAIN-TO-SOURCE RESISTANCE ()
Figure 2. Transfer Characteristics
0.3 VGS = 5 V 0.25 0.2 0.15 0.1 0.05 T = -40°C 0 0 5 10 15 20 25 30 35 40 45 50 T = 125°C T = 25°C
0.01 TJ = 25°C 0.075 VGS = 5 V 0.05 VGS = 10 V 0.025
0 0 5 10 15 20 25 30 35 40 45 50 ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance versus Drain Current and Temperature
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 ID = 12.5 VGS = 5 V IDSS, LEAKAGE (nA) 1000 10,000
Figure 4. On-Resistance versus Drain Current and Gate Voltage
VGS = 0 V
1.4
TJ = 150°C
1.2
1
TJ = 125°C 100
0.8 0.6 -50 10 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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