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Details, datasheet, quote on part number:NTD2955-001
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| Part: | NTD2955-001 |
| Category: | Power Management => DC-DC Converters => DC-DC Switching => Controllers |
| Description: | TMOS7, Power MOSFET, 60V, Package: Dpak Single Gauge Surface Mount, Pins=4 |
| Company: | ON Semiconductor |
| Datasheet: | Download NTD2955-001 datasheet File size : 57 kB |
| Request For quote: | Find where to buy NTD2955-001
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Datasheet text preview:
NTD2955 Power MOSFET 12 Amps, 60 Volts
P-Channel DPAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients. · Avalanche Energy Specified · IDSS and VDS(on) Specified at Elevated Temperature · Designed for Low-Voltage, High-Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes
MAXIMUM RATINGS (Tj = 25°C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous - Non-repetitive (tp 10 ms) Drain Current Drain Current - Continuous @ Ta = 25°C Drain Current - Single Pulse (tp 10 ms) Total Power Dissipation @ Ta = 25°C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.0 mH, RG = 25 W) Thermal Resistance - Junction to Case - Junction to Ambient (Note 1) - Junction to Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 in. from case for 10 seconds Symbol VDSS VGS VGSM ID IDM PD TJ, Tstg EAS Value 60 ± 20 ± 25 12 36 55 - 55 to 150 216 Unit Vdc Vdc Vpk Adc Apk Watts °C mJ 12 3 Y WW T S
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V(BR)DSS 60 V RDS(on) TYP 155 mW @ 10 V, 6 A P-Channel D ID MAX 12 A
G
4
MARKING DIAGRAM
DPAK CASE 369A Style 2 = Year = Work Week = MOSFET
YWW NT2955
PIN ASSIGNMENT
4 Drain
Rq J C Rq J A Rq J A TL
2.73 100 71.4 260
°C/W
°C
2 1 3 Drain Gate Source
1. When surface mounted to an FR4 board using 1 in. pad size (Cu. area = 1.127 in2) 2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu. area = 0.412 in2)
ORDERING INFORMATION
Device NTD2955-1 NTD2955 NTD2955T4 NTD2955-1G NTD2955G NTD2955T4G DPAK (Pb-Free) DPAK Package Shipping 75 Units/Rail 75 Units/Rail 2500 Tape & Reel 75 Units/Rail 75 Units/Rail 2500 Tape & Reel
© Semiconductor Components Industries, LLC, 2003
1
July, 2003 - Rev. 2
Publication Order Number: NTD2955/D
NTD2955
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 0.25 µA) (Positive Temperature Coefficient) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = 60 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = 60 Vdc, TJ = 150°C) Gate-Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) (Negative Temperature Coefficient) Static Drain-Source On-State Resistance (VGS = 10 Vdc, ID = 6.0 Adc) Drain-to-Source On-Voltage (VGS = 10 Vdc, ID = 12 Adc) (VGS = 10 Vdc, ID = 6.0 Adc, TJ = 150°C) Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 3 and 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 48 Vdc, VGS = 10 Vdc, ID = 12 A,) DRAIN-SOURCE DIODE CHARACTERISTICS (Note 3) Diode Forward On-Voltage (IS = 12 Adc, VGS = 0 V) (IS = 12 Adc, VGS = 0 V, TJ = 150°C) Reverse Recovery Time (IS = 12 A dIS/dt = 100 A/ ,VGS = 0 V) 12 A, dI 100 A/ms V V) VSD - - trr ta tb Reverse Recovery Stored Charge 3. Indicates Pulse Test: Pulse Width 300 ms, Duty Cycle 2% 4. Switching characteristics are independent of operating junction temperature QRR - - - - 1.6 1.3 50 40 10 0.10 - - - mC 2.5 - ns Vdc (VDD = 30 Vdc, ID = 12 A, VGS = 10 V, RG = 9.1 W) td(on) tr td(off) tf QT QGS QGD - - - - - - - 10 45 26 48 15 4.0 7.0 20 85 40 90 30 - - nC ns (VDS = 25 Vdc, VGS = 0 Vdc, F = 1.0 MHz) Ci s s Co s s Crss - - - 500 150 50 750 250 100 pF VGS(th) 2.0 - RD S ( o n ) - VDS(on) 1.86 -
gFS
Symbol V(BR)DSS
Min
Typ
Max
Unit Vdc
60 - IDSS - - IGSS -
- 67 - - -
- - 10 100 100
mV/°C mAdc
nAdc Vdc
2.8 4.5 0.155
4.0 - 0.180
mV/°C W Vdc
2.6 2.0 - Mhos
8.0
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NTD2955
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
25 I D , DRAIN CURRENT (AMPS) 24 22 20 18 16 14 12 10 8 6 4 2 0 2 3 4 5 6 7 8 9 10
TJ = 25°C
VGS = 10 V 9.5 V
9V
8V 7V 6.5 V 6V I D , DRAIN CURRENT (AMPS)
VDS 10 V
TJ = - 55°C 25°C 125°C
20
15
10
5.5 V 5V
5 0
0
1
2
3
4
5
6
7
8
9
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0 3 6 15 12 9 18 ID, DRAIN CURRENT (AMPS) 21 24 - 55°C 25°C TJ = 125°C VGS = 10 V
0.250 TJ = 25°C
0.225 0.200 0.175
VGS = 10 V
0.150 0.125 0.100 0.075 0.050 0 3 6 12 15 9 18 ID, DRAIN CURRENT (AMPS) 21 24 15 V
Figure 3. On-Resistance versus Drain Current and Temperature
Figure 4. On-Resistance versus Drain Current and Gate Voltage
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 - 50 - 25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 175 VGS = 10 V ID = 6 A I DSS , LEAKAGE (nA)
1000
VGS = 0 V
100 TJ = 125°C
10 100°C
1
5
10
15 20 25 30 35 40 45 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
55
60
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-To-Source Leakage Current versus Voltage
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