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Part: NTHD4P02FT1G
Category:
Description: Power MOSFET And Schottky Diode 20 V, 2.1A, Single P-channel w/ 1.0 a Schottky Barrier Diode, ChipFET
Company: ON Semiconductor
Datasheet: Download NTHD4P02FT1G datasheet File size : 624 kB
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NTHD4P02F Power MOSFET and Schottky Diode
20 V, 2.1 A, Single P-Channel with 1.0 A Schottky Barrier Diode, ChipFET]
Features http://onsemi.com MOSFET
V(BR)DSS -20 V 200 mW @ -2.5 V RDS(on) TYP 130 mW @ -4.5 V -2.1 A ID MAX
· Leadless SMD Package Featuring a MOSFET and Schottky Diode · 40% Smaller than TSOP-6 Package with Similar Thermal
Characteristics · Independent Pinout to each Device to Ease Circuit Design · Ultra Low VF Schottky
Applications
· · · ·
Li-Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products
SCHOTTKY DIODE
VR MAX 20 V VF TYP 0.510 V A IF MAX 1.0 A
S
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Steady State tp = 10 ms Steady State TJ = 25°C TJ = 85°C IS TJ, TSTG TL TJ = 25°C TJ = 85°C IDM PD Symbol VDSS VGS ID Value -20 ±12 -2.1 -1.5 -7.0 1.1 0.6 -2.1 -55 to 150 260 A °C °C A W ChipFET CASE 1206A STYLE 3 Units V V A D P-Channel MOSFET C SCHOTTKY DIODE G
Continuous Source Current (Body Diode) Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8 from case for 10 s)
PIN CONNECTIONS
1 8
MARKING DIAGRAM
1 2 3 4 C3 8 7 6 5
A
2 7
C C
6
A S
3
SCHOTTKY DIODE MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Parameter Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Symbol VRRM VR IF Symbol Rq J A Value 20 20 2.2 Max 110 Units V V A Units °C/W
D D
4 5
G
Top View C3 = Specific Device Code
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient Steady State (Note 1)
ORDERING INFORMATION
Device NTHD4P02FT1 NTHD4P02FT1G Package ChipFET ChipFET (Pb-free) Shipping 3000/Tape & Reel 3000/Tape & Reel
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTHD4P02F/D
© Semiconductor Components Industries, LLC, 2004
1
January, 2004 - Rev. 4
NTHD4P02F
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current V(BR)DSS IDSS VGS = 0 V, ID = -250 mA VDS = -16 V, VGS = 0 V, TJ = 25°C VDS = -16 V, VGS = 0 V, TJ = 85°C Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Drain-to-Source On- Resistance VGS(TH) RD S ( o n ) VGS = VDS, ID = -250 mA VGS = -4.5, ID = -2.1 A VGS = -2.5, ID = -1.7 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = -4.5 V, VDD = -16 V, ID = -2.1 A, RG = 2.5 W 7.0 13 33 27 12 25 50 40 ns CI S S COSS CR S S QG(TOT) QG(TH) QGS QGD VGS = -4.5 V, VDS = -10 V, ID = -2.1 A VGS = 0 V, f = 1.0 MHz, V 1 0 MH VDS = -10 V 185 95 30 3.0 0.2 0.5 0.9 300 150 50 6.0 nC pF gFS VDS = -10 V, ID = -1.7 A -0.6 -0.75 0.130 0.200 5.0 -1.2 0.155 0.240 S V W IGSS VDS = 0 V, VGS = ±12 V -20 -23 -1.0 -5.0 ±100 nA V mA Symbol Test Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS (Note 2) Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR ta tb QRR VGS = 0 V, IS = -2.1 A , dIS/dt = 100 A/ms VGS = 0 V, IS = -2.1 A -0.85 32 10 22 15 nC -1.15 V ns
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter Maximum Instantaneous Forward Voltage Symbol VF Test Conditions IF = 0.1 A IF = 0.5 A IF = 1.0 A Maximum Instantaneous Reverse Current IR VR = 10 V VR = 20 V Maximum Voltage Rate of Change Non-Repetitive Peak Surge Current dv/dt IFSM VR = 20 V Halfwave, Single Pulse, 60 Hz 10,000 23 Min Typ 0.425 0.480 0.510 0.575 1.0 5.0 V/ns A mA Max Units V
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures.
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NTHD4P02F
TYPICAL MOSFET PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
4 -ID, DRAIN CURRENT (AMPS) VGS = -6 V to -3 V VGS = -2.4 V -2.2 V TJ = 25°C -ID, DRAIN CURRENT (AMPS) 4 VDS -10 V 3
-2 V
3 -1.8 V 2 -1.6 V 1 -1.4 V -1.2 V 0 0 1 2 3 4 5 6 7 8 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
2
1
TC = -55°C 25°C 100°C 3
0 0.5
1 1.5 2 2.5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.5 ID = -2.1 A TJ = 25°C 0.25
Figure 2. Transfer Characteristics
TJ = 25°C 0.225 VGS = -2.5 V 0.2 0.175 0.15 VGS = -4.5 V 0.125 0.1 0.5 1.5 2.5 3.5 -ID, DRAIN CURRENT (AMPS)
0.4
0.3
0.2
0.1 0 1 2 4 3 5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 6
Figure 3. On-Resistance vs. Gate-to-Source Voltage
1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = -2.1 A VGS = -4.5 V -IDSS, LEAKAGE (A) 1.4 1000 10000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V TJ = 150°C
1.2
1
100
TJ = 100°C
0.8 0.6 -50 10 -25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 -TJ, JUNCTION TEMPERATURE (°C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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