|
|
Part: NTHD5902
Category:
Description: Power MOSFET 30 V, 2.9 A, N-channel Dual ChipFET™
Company: ON Semiconductor
Datasheet: Download NTHD5902 datasheet File size : 624 kB
Request For quote: Find where to buy NTHD5902
Datasheet text preview:
NTHD5902T1 Power MOSFET Dual N-Channel ChipFETE
2.9 Amps, 30 Volts
Features
· Low RDS(on) for Higher Efficiency · Miniature ChipFET Surface Mount Package Saves Board Space
Applications
http://onsemi.com
· Power Management in Portable and BatteryPowered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
DUAL NCHANNEL 2.9 AMPS, 30 VOLTS RDS(on) = 85 mW
D1 D2
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating DrainSource Voltage GateSource Voltage Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C Pulsed Drain Current Continuous Source Current (Diode Conduction) (Note 1) Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID "3.9 "2.8 IDM IS PD 2.1 1.1 TJ, Tstg 1.1 0.6 °C 1.8 "10 0.9 "2.9 "2.1 A A W 5 secs 30 "20 Steady State Unit V V A G1
G2
S1 NChannel MOSFET
S2 NChannel MOSFET
55 to +150
ChipFET CASE 1206A STYLE 2
1. Surface Mounted on 1 x 1 FR4 Board.
PIN CONNECTIONS
MARKING DIAGRAM
1 2 3 4 A6 8 7 6 5
D1 D1 D2 D2
8 7 6 5
1 2 3 4
S1 G1 S2 G2
A6 = Specific Device Code
ORDERING INFORMATION
Device NTHD5902T1 Package ChipFET Shipping 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
1
March, 2002 Rev. 2
Publication Order Number: NTHD5902T1/D
NTHD5902T1
THERMAL CHARACTERISTICS
Characteristic Maximum JunctiontoAmbient (Note 2) t v 5 sec Steady State Maximum JunctiontoFoot Steady State Symbol Rt h J A 50 90 Rt h J F 30 60 110 40 °C/W Typ Max Unit °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Static Gate Threshold Voltage GateBody Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 85°C OnState Drain Current (Note 3) DrainSource OnState Resistance (Note 3) ID(on) rD S ( o n ) VDS w 5.0 V, VGS = 10 V VGS = 10 V, ID = 2.9 A VGS = 4.5 V, ID = 2.2 A Forward Transconductance (Note 3) Diode Forward Voltage (Note 3) Dynamic (Note 4) Total Gate Charge GateSource Charge GateDrain Charge TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time SourceDrain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1.0 A, VGEN = 10 V 10A 10 V, RG = 6 W VDS = 15 V VGS = 10 V 15 V, 10 V, ID = 2.9 A 5.0 0.8 1.0 7.0 12 12 7.0 40 7.5 11 18 18 11 80 ns nC gfs VSD VDS = 15 V, ID = 2.9 A IS = 0.9 A, VGS = 0 V 1.0 10 0.072 0.120 20 0.8 "100 1.0 5.0 0.085 0.143 1.2 S V A W V nA mA Symbol Test Condition Min Typ Max Unit
2. Surface Mounted on 1 x 1 FR4 Board. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Guaranteed by design, not subject to production testing.
http://onsemi.com
2
NTHD5902T1
TYPICAL ELECTRICAL CHARACTERISTICS
10 VGS = 10 thru 5 V 8 ID,Drain Current (A) ID,Drain Current (A) 10
8
6
4V
6
4
4 125°C 2 25°C TC = 55°C
2
3V
0
0
0.5
1.0 1.5 2.0 2.5 VDS, DraintoSource Voltage (V)
3.0
0
0
1 2 3 VGS, GatetoSource Voltage (V)
4
5
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
0.20 r DS(on),OnResistance ( )
400 300 VGS = 4.5 V C, Capacitance (pF)
0.15
Ci s s
0.10 VGS = 10 V 0.05
200
Co s s 100 Crss 0 4 8 12 16 VDS, DraintoSource Voltage (V) 20
0 0 2 4 6 ID, Drain Current (A) 8 10
0
Figure 3. OnResistance vs. Drain Current
Figure 4. Capacitance
10 VGS,GatetoSource Voltage (V) VDS = 15 V ID = 2.9 A r DS(on),OnResistance ( ) (Normalized)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 50 VGS = 10 V ID = 2.9 A
8
6
4
2
0
0
1
2 3 Qg, Total Gate Charge (nC)
4
5
25
0 25 50 75 100 TJ, Junction Temperature (°C)
125
150
Figure 5. Gate Charge
Figure 6. OnResistance vs. Junction Temperature
http://onsemi.com
3
Others parts begin by nt
NT-1 NT-2 NT-3 NT-4 NT-5 NT-6 NT-7 NT-8 NT-9 NT-10 NT-11 NT-12 NT-13 NT-14 NT-15 NT-16 NT-17 NT-18 NT-19 NT-20 NT-21
|
|
|
