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Details, datasheet, quote on part number:NTHD5903T1
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| Part: | NTHD5903T1 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | Dual P Channel 2.5 V (G-S) MOSFET, Package: ChipFET, Pins=8 |
| Company: | ON Semiconductor |
| Datasheet: | Download NTHD5903T1 datasheet File size : 59 kB |
| Request For quote: | Find where to buy NTHD5903T1
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Datasheet text preview:
NTHD5903T1 Power MOSFET Dual P-Channel ChipFETE
2.1 Amps, 20 Volts
Features
· Low RDS(on) for Higher Efficiency · Logic Level Gate Drive · Miniature ChipFET Surface Mount Package Saves Board Space
Applications
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· Power Management in Portable and BatteryPowered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
DUAL PCHANNEL 2.1 AMPS, 20 VOLTS RDS(on) = 155 mW
S1 S2
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating DrainSource Voltage GateSource Voltage Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C Pulsed Drain Current Continuous Source Current (Diode Conduction) (Note 1) Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID "2.9 "2.1 IDM IS PD 2.1 1.1 TJ, Tstg 1.1 0.6 °C 1.8 "10 0.9 "2.1 "1.5 A A W ChipFET CASE 1206A STYLE 2 5 secs Steady State Unit V V A D1 PChannel MOSFET D2 PChannel MOSFET G1 G2
20 "12
55 to +150
1. Surface Mounted on 1 x 1 FR4 Board.
PIN CONNECTIONS
MARKING DIAGRAM
1 2 3 4 A7 8 7 6 5
D1 D1 D2 D2
8 7 6 5
1 2 3 4
S1 G1 S2 G2
A7 = Specific Device Code
ORDERING INFORMATION
Device NTHD5903T1 Package ChipFET Shipping 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
1
March, 2002 Rev. 2
Publication Order Number: NTHD5903T1/D
NTHD5903T1
THERMAL CHARACTERISTICS
Characteristic Maximum JunctiontoAmbient (Note 2) t v 5 sec Steady State Maximum JunctiontoFoot (Drain) Steady State Symbol Rt h J A 50 90 Rt h J F 30 60 110 40 °C/W Typ Max Unit °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Static Gate Threshold Voltage GateBody Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85°C OnState Drain Current (Note 3) DrainSource OnState Resistance (Note 3) ID(on) rD S ( o n ) VDS v 5.0 V, VGS = 4.5 V VGS = 4.5 V, ID = 2.1 A VGS = 3.6 V, ID = 2.0 A VGS = 2.5 V, ID = 1.7 A Forward Transconductance (Note 3) Diode Forward Voltage (Note 3) Dynamic (Note 4) Total Gate Charge GateSource Charge GateDrain Charge TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time SourceDrain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.9 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1.0 A, VGEN = 4 5 V 1 0 A 4.5 V, RG = 6 W VDS = 10 V VGS = 4.5 V 10 V, 4 5 V, ID = 2.1 A 3.0 0.9 0.6 13 35 25 25 40 6.0 20 55 40 40 80 ns nC gfs VSD VDS = 10 V, ID = 2.1 A IS = 0.9 A, VGS = 0 V 0.6 10 0.130 0.150 0.215 5.0 0.8 "100 1.0 5.0 0.155 0.180 0.260 1.2 S V A W V nA mA Symbol Test Condition Min Typ Max Unit
2. Surface Mounted on 1 x 1 FR4 Board. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Guaranteed by design, not subject to production testing.
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NTHD5903T1
TYPICAL ELECTRICAL CHARACTERISTICS
10 VGS = 4 V 10 V ID, DRAIN CURRENT (AMPS) 8 TJ = 25°C 6 3.6 V ID, DRAIN CURRENT (AMPS) 3.4 V 3V 2.8 V 4 VGS = 1.4 V 2 0 0 1 2 3 4 5 6 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) 2.6 V 2.4 V 2.2 V 1.8 V 8 25°C 10 125°C
TC = 55°C
6
4
2 0 0 2 3 4 1 VGS, GATETOSOURCE VOLTAGE (VOLTS) 5
Figure 1. OnRegion Characteristics
RDS(on), DRAINTOSOURCE RESISTANCE (W) RDS(on), DRAINTOSOURCE RESISTANCE (W) 4 ID = 2.1 A TJ = 25°C 3 0.4
Figure 2. Transfer Characteristics
TJ = 25°C 0.35 0.3 VGS = 2.5 V 0.25 0.2 0.15 0.1 0.05 1 2 3 4 5 6 7 8 9 10 ID, DRAIN CURRENT (AMPS) VGS = 4.5 V
2
VGS = 3.6 V
1
0 0 1 3 2 4 VGS, GATETOSOURCE VOLTAGE (VOLTS) 5
Figure 3. OnResistance vs. GatetoSource Voltage
1.6 RDS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED) ID = 2.1 A VGS = 4.5 V 1.4 1.0E7 IDSS, LEAKAGE (A) 1.0E6
Figure 4. OnResistance vs. Drain Current and Gate Voltage
VGS = 0 V TJ = 150°C TJ = 100°C
1.2
1.0E8 1.0E9 TJ = 25°C
1
0.8 0.6 50
1.0E10 1.0E11 25 0 25 50 75 100 125 150 0 4 8
12
16
20
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 5. OnResistance Variation with Temperature
Figure 6. DraintoSource Leakage Current vs. Voltage
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