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Details, datasheet, quote on part number:NTHD5904T1
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| Part: | NTHD5904T1 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | Dual N Channel 2.5 V (G-S) MOSFET, Package: ChipFET, Pins=8 |
| Company: | ON Semiconductor |
| Datasheet: | Download NTHD5904T1 datasheet File size : 53 kB |
| Request For quote: | Find where to buy NTHD5904T1
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Datasheet text preview:
NTHD5904T1 Power MOSFET Dual N-Channel
3.1 Amps, 20 Volts
Features
· Low RDS(on) for Higher Efficiency · Logic Level Gate Drive · Miniature ChipFETt Surface Mount Package Saves Board Space
Applications
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· Power Management in Portable and BatteryPowered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
DUAL NCHANNEL 3.1 AMPS, 20 VOLTS RDS(on) = 75 mW
D1 D2
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating DrainSource Voltage GateSource Voltage Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C Pulsed Drain Current Continuous Source Current (Diode Conduction) (Note 1) Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID "4.2 "3.0 IDM IS PD 2.1 1.1 TJ, Tstg 1.1 0.6 °C 1.8 "10 0.9 "3.1 "2.2 A A W ChipFET CASE 1206A STYLE 2 5 secs 20 "12 Steady State Unit V V A NChannel MOSFET NChannel MOSFET S1 S2 G1 G2
55 to +150
1. Surface Mounted on 1 x 1 FR4 Board.
PIN CONNECTIONS
MARKING DIAGRAM
1 2 3 4 A1 8 7 6 5
D1 D1 D2 D2
8 7 6 5
1 2 3 4
S1 G1 S2 G2
A1 = Specific Device Code
ORDERING INFORMATION
Device NTHD5904T1 Package ChipFET Shipping 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
1
March, 2002 Rev. 3
Publication Order Number: NTHD5904T1/D
NTHD5904T1
THERMAL CHARACTERISTICS
Characteristic Maximum JunctiontoAmbient (Note 2) t v 5 sec Steady State Maximum JunctiontoFoot (Drain) Steady State Symbol Rt h J A 50 90 Rt h J F 30 60 110 40 °C/W Typ Max Unit °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Static Gate Threshold Voltage GateBody Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85°C OnState Drain Current (Note 3) DrainSource OnState Resistance (Note 3) ID(on) rD S ( o n ) VDS w 5.0 V, VGS = 4.5 V VGS = 4.5 V, ID = 3.1 A VGS = 2.5 V, ID = 2.3 A Forward Transconductance (Note 3) Diode Forward Voltage (Note 3) Dynamic (Note 4) Total Gate Charge GateSource Charge GateDrain Charge TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time SourceDrain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.9 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1.0 A, VGEN = 4 5 V 10A 4.5 V, RG = 6 W VDS = 10 V VGS = 4 5 V 10 V, 4.5 V, ID = 3.1 A 4.0 0.6 1.3 12 35 19 9.0 40 6.0 18 55 30 15 80 ns nC gfs VSD VDS = 10 V, ID = 3.1 A IS = 0.9 A, VGS = 0 V 0.6 10 0.065 0.115 8.0 0.8 "100 1.0 5.0 0.075 0.143 1.2 S V A W V nA mA Symbol Test Condition Min Typ Max Unit
2. Surface Mounted on 1 x 1 FR4 Board. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Guaranteed by design, not subject to production testing.
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NTHD5904T1
TYPICAL ELECTRICAL CHARACTERISTICS
10 VGS = 5 thru 3 V 8 ID,Drain Current (A) 2.5 V D,Drain Current (A) 8 10 TC = 55°C 25°C
6
6
125°C
4 2V 2 1.5 V 0 0 0.5 1.0 1.5 2.0 2.5 VDS, DraintoSource Voltage (V) 3.0
4
I 2 0 0
0.5
1.0 1.5 2.0 2.5 3.0 VGS, GatetoSource Voltage (V)
3.5
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
0.30 r DS(on),OnResistance ( ) 0.25 C, Capacitance (pF) 0.20 0.15 0.10 0.05 0 0 2 4 6 8 10 ID, Drain Current (A) VGS = 2.5 V
600 500 Ci s s 400 300 200 100 0 0 4 8 12 16 VDS, DraintoSource Voltage (V) 20 Co s s Crss
VGS = 4.5 V
Figure 3. OnResistance vs. Drain Current
Figure 4. Capacitance
5 VGS,GatetoSource Voltage (V) VDS = 10 V ID = 3.1 A r DS(on),OnResistance ( ) (Normalized)
1.6 VGS = 4.5 V ID = 3.1 A
4
1.4
3
1.2
2
1.0
1
0.8
0
0
1 2 3 Qg, Total Gate Charge (nC)
4
0.6 50
25
0 25 50 75 100 TJ, Junction Temperature (°C)
125
150
Figure 5. Gate Charge
Figure 6. OnResistance vs. Junction Temperature
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