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Details, datasheet, quote on part number:NTHS2101P
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Datasheet text preview:
NTHS2101P 8.0 V, P-Channel Power MOSFET ChipFETt Single Package
Features
· Offers an Ultra Low RDS(on) Solution in the ChipFET Package · Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 · · · · ·
making it an Ideal Device for Applications where Board Space is at a Premium Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the Operating Voltage used in many Logic ICs in Portable Electronics Simplifies Circuit Design since Additional Boost Circuits for Gate Voltages are not Required Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology Pb-Free Package is Available
V(BR)DSS
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Ultra Low RDS(on) TYP 19 mW @ -4.5 VGS 8.0 V 25 mW @ -2.5 VGS 34 mW @ -1.8 VGS 5.4 A ID MAX
S
G
Applications
· Optimized for Battery and Load Management Applications in
Portable Equipment such as MP3 Players, Cell Phones, Digital Cameras, Personal Digital Assistant and other Portable Applications · Charge Control in Battery Chargers · Buck and Boost Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous - 5 seconds Total Power Dissipation Continuous @ TA = 25°C (5 sec) @ TA = 25°C Continuous @ 85°C (5 sec) @ 85°C Continuous Source Current Thermal Resistance (Note 1) Junction-to-Ambient, 5 sec Junction-to-Ambient, Continuous Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS ID ID PD 1.3 2.5 0.7 1.3 Is Rq J A Rq J A TL -1.1 50 95 260 °C A °C/W Value -8.0 "8.0 -5.4 -7.5 Unit Vdc Vdc A W
D P-Channel MOSFET
ChipFET CASE 1206A STYLE 1
PIN CONNECTIONS
D D D S
8 7 6 5 1 2 3 4
MARKING DIAGRAM
1 2 3 4 D4 d 8 7 6 5
D D D G
D4 = Specific Device Code d = Date Code
ORDERING INFORMATION
Device NTHS2101PT1 NTHS2101PT1G Package ChipFET ChipFET (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to a 1 x 1 FR4 board.
© Semiconductor Components Industries, LLC, 2004
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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June, 2004 - Rev. 3
Publication Order Number: NTHS2101P/D
NTHS2101P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 2) Temperature Coefficient (Positive) Gate-Body Leakage Current Zero Zero Gate Voltage Drain Current V(Br)DSS IGSS IDSS VGS = 0 Vdc, ID = -250 mAdc VDS = 0 Vdc, VGS = "8.0 Vdc VDS = -6.4 Vdc, VGS = 0 Vdc VDS = -6.4 Vdc, VGS = 0 Vdc, TJ = 85°C VDS = VGS, ID = -250 mAdc VGS = -4.5 Vdc, ID = -5.4 Adc VGS = -2.5 Vdc, ID = -4.5 Adc VGS = -1.8 Vdc, ID = -2.0 Adc VDS = -5.0 Vdc, ID = -5.2 Adc IS = -1.1 Adc, VGS = 0 Vdc -8.0 - - - - - - - - "100 -1.0 -5.0 Vdc nAdc mAdc Symbol Test Condition Min Typ Max Unit
ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-to-Source On-Resistance VGS(th) RD S ( o n ) -0.45 - - - - - - 19 25 34 20 -0.62 -1.5 25 36 48 - -1.2 Vdc mW
Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge
gFS VSD
S V
Ci s s Co s s Crss
VDS = -6.4 Vdc VGS = 0 V f = 1.0 MHz 1 0 MHz
- - -
2400 550 420
- - -
pF
td(on) tr td(off) tf Qg Qgs Qgd
VDD = -6.4 Vdc VGS = -4.5 Vdc ID = -5 4 Adc -5.4 RG = 2.0 W (Note 2)
- - - -
7.0 28 73 60 15 4.0 8.0 90
- - - - 30 - - -
ns
VGS = -4.5 Vdc ID = -5.4 Adc VDS = -6.4 Vdc IF = -1.1 A, di/dt = 100 A/ms
- - - -
nC
Source-Drain Reverse Recovery Time
Trr
ns
2. Pulse Test: Pulse Width = 250 ms, Duty Cycle = 2%. 3. Switching characteristics are independent of operating junction temperatures.
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NTHS2101P
TYPICAL ELECTRICAL CHARACTERISTICS
VGS = -8 thru -2.4 V TJ = 25°C 12 -1.8 V 8 -1.6 V 4 -1.4 V 0 0 1 2 3 4 5 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 6
-ID, DRAIN CURRENT (AMPS)
-ID, DRAIN CURRENT (AMPS)
16
-2 V
16
12
8 TJ = 100°C 4 TJ = -55°C 0 0.5 1.0 1.5 2.0 2.5 -VGS, GATE-TO-SOURCE VOLTAGE (V) 3.0 TJ = 25°C
0
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
0.10 VGS = -1.8 V 0.08
1.6 VGS = -4.5 V 1.4
0.06
1.2
0.04
VGS = -2.5 V
1.0
0.02 0 2 4 6
VGS = -4.5 V
0.8 0.6 -50
8 10 12 14 16 -ID, DRAIN CURRENT (A)
18
20
-25
0 25 50 125 75 100 TJ, JUNCTION TEMPERATURE (°C)
150
Figure 3. On-Resistance versus Drain Current and Gate Voltage
10,000 TJ = 125°C -IDSS, LEAKAGE (nA) 1000 C, CAPACITANCE (pF) TJ = 100°C
Figure 4. On-Resistance Variation with Temperature
5000 4500 4000 3500 3000 2500 2000 1500 1000 500 Crss 8 6 4 2 0 2 4 0 0 2 4 6 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 8 6 8 -VGS -VDS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Co s s Crss Ci s s Ci s s TJ = 25°C
100 VGS = 0 V 10
1
Figure 5. Drain-to-Source Leakage Current vs. Voltage
Figure 6. Capacitance Variation
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