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Details, datasheet, quote on part number:NTHS4101P
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Datasheet text preview:
NTHS4101P 20 V, P-Channel Power MOSFET ChipFET] Single Package
Features
· Offers an Ultra Low RDS(on) Solution in the ChipFET Package · Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 · · · ·
making it an Ideal Device for Applications where Board Space is at a Premium Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the Operating Voltage used in many Logic ICs in Portable Electronics Simplifies Circuit Design since Additional Boost Circuits for Gate Voltages are not Required Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology
V(BR)DSS
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RDS(on) TYP 21 mW @ -4.5 V -20 V 30 mW @ -2.5 V 42 mW @ -1.8 V S -4.8 A ID MAX
G
Applications
· Optimized for Battery and Load Management Applications in
Portable Equipment such as MP3 Players, Cell Phones, Digital Cameras, Personal Digital Assistant and other Portable Applications · Charge Control in Battery Chargers · Buck and Boost Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous - 5 seconds Total Power Dissipation Continuous @ TA = 25°C (5 sec) @ TA = 25°C Continuous @ 85°C (5 sec) @ 85°C Continuous Source Current Thermal Resistance (Note 1) Junction-to-Ambient, 5 sec Junction-to-Ambient, Continuous Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds 1. When surface mounted to a 1 x 1 FR4 board. Symbol VDSS VGS ID ID PD 1.3 2.5 0.7 1.3 Is Rq J A Rq J A TL -4.8 50 95 260 °C A °C/W Value -20 "8.0 -4.8 -6.7 Unit Vdc Vdc A D W D D S
7 6 5 2 3 4 8 1
D P-Channel MOSFET
ChipFET CASE 1206A Style 1
PIN CONNECTIONS
D D D G 1 2 3 4
MARKING DIAGRAM
8 7 6 5 C6 Shipping 3000 Tape / Reel 3000 Tape / Reel
C6 = Specific Device Code
ORDERING INFORMATION
Device NTHS4101PT1 NTHS4101PT1G Package ChipFET ChipFET (Pb-free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
1
October, 2003 - Rev. 0
Publication Order Number: NTHS4101P/D
NTHS4101P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 2) Temperature Coefficient (Positive) Gate-Body Leakage Current Zero Zero Gate Voltage Drain Current V(Br)DSS IGSS IDSS VGS = 0 Vdc, ID = -250 mAdc VDS = 0 Vdc, VGS = "8.0 Vdc VDS = -16 Vdc, VGS = 0 Vdc VDS = -16 Vdc, VGS = 0 Vdc, TJ = 85°C -20 - - - - - - - - "100 -1.0 -5.0 Vdc nAdc mAdc Symbol Test Condition Min Typ Max Unit
ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-to-Source On-Resistance VGS(th) RD S ( o n ) VDS = VGS, ID = -250 mAdc VGS = -4.5 Vdc, ID = -4.8 Adc VGS = -2.5 Vdc, ID = -4.2 Adc VGS = -1.8 Vdc, ID = -1.0 Adc VDS = -5.0 Vdc, ID = -4.8 Adc IS = -4.8 Adc, VGS = 0 Vdc -0.45 - - - - - - 21 30 42 15 -0.8 -1.5 34 40 52 - -1.2 Vdc mW
Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge
gFS VSD
S V
Ci s s Co s s Crss
VDS = -16 Vdc VGS = 0 V f = 1.0 MHz 1 0 MHz
- - -
2100 290 200
- - -
pF
td(on) tr td(off) tf Qg Qgs Qgd
VDD = -16 Vdc VGS = -4.5 Vdc ID = -4.5 Adc RG = 2.5 W VGS = -4.5 Vdc ID = -4.5 Adc VDS = -16 Vdc (Note 3)
- - - - - - -
8.0 28 75 60 25 4.0 7.0
- - - - 35 - -
ns
nC
2. Pulse Test: Pulse Width = 250 ms, Duty Cycle = 2%. 3. Switching characteristics are independent of operating junction temperatures.
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NTHS4101P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10 -ID, DRAIN CURRENT (AMPS) 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 -1.2 V 6 7 8 -1.4 V -1.6 V VGS = -10 V to -2.4 V -1.8 V TJ = 25°C -ID, DRAIN CURRENT (AMPS) 10 9 8 7 6 5 4 3 2 1 0 0 0.5 2.5 1 1.5 2 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 3 TJ = -55°C 125°C 25°C
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.1 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VGS = -1.8 V 0.08 1.5
Figure 2. Transfer Characteristics
VGS = -4.5 V 1.3
0.06
1.1
0.04
VGS = -2.5 V
0.9
0.02 0 2 4
VGS = -4.5 V
0.7 0.5 -50
8 10 12 -ID, DRAIN CURRENT (AMPS) 6
14
16
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
10000 VGS = 0 V -IDSS, LEAKAGE (nA) 1000 TJ = 125°C TJ = 100°C 100
Figure 4. On-Resistance Variation with Temperature
10 TJ = 25°C
1 0.1 0 2
4
6
8
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. Drain-to-Source Leakage Current vs. Voltage
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