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Part: NTHS4101PT1G
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: -20V TrenchFET , Package: ChipFET, Pins=8
Company: ON Semiconductor
Datasheet: Download NTHS4101PT1G datasheet File size : 624 kB
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Datasheet text preview:
NTHS4101PT1 Product Preview -20 V, P-Channel Power MOSFET ChipFETt Single Package
Features http://onsemi.com
· Offers an Ultra Low RDS(on) Solution in the ChipFET Package · Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 · · · ·
making it an Ideal Device for Applications where Board Space is at a Premium Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the Operating Voltage used in many Logic ICs in Portable Electronics Simplifies Circuit Design since Additional Boost Circuits for Gate Voltages are not Required Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology
ULTRA LOW RDS(on)
TrenchFET RDS(on) = 21 mW (Typ.) @ VGS = -4.5 V RDS(on) = 30 mW (Typ.) @ VGS = -2.5 V RDS(on) = 42 mW (Typ.) @ VGS = -1.8 V
S
G
Applications
· Optimized for Battery and Load Management Applications in
Portable Equipment such as MP3 Players, Cell Phones, Digital Cameras, Personal Digital Assistant and other Portable Applications · Charge Control in Battery Chargers · Buck and Boost Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous - 5 seconds Total Power Dissipation Continuous @ TA = 25°C (5 sec) @ TA = 25°C Continuous @ 85°C (5 sec) @ 85°C Continuous Source Current Thermal Resistance (Note 1) Junction-to-Ambient, 5 sec Junction-to-Ambient, Continuous Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds 1. When surface mounted to a 1 x 1 FR4 board. Symbol VDSS VGS ID ID PD 1.3 2.5 0.7 1.3 Is Rq J A Rq J A TL -1.1 50 95 260 °C A °C/W Value -20 "8.0 -4.8 -6.7 Unit Vdc Vdc A W D D D S
8 7 6 5 1 2 3 4
D P-Channel MOSFET
ChipFET CASE 1206A STYLE 1
PIN CONNECTIONS
D D D G 1 2 3 4
MARKING DIAGRAM
8 7 6 5 C6
C6 = Specific Device Code
ORDERING INFORMATION
Device Package ChipFET Shipping TBD
This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice.
NTHS4101PT1
© Semiconductor Components Industries, LLC, 2003
1
February, 2003 - Rev. 3
Publication Order Number: NTHS4101PT1/D
NTHS4101PT1
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 2) Temperature Coefficient (Positive) Gate-Body Leakage Current Zero Zero Gate Voltage Drain Current V(Br)DSS IGSS IDSS VGS = 0 Vdc, ID = -250 mAdc VDS = 0 Vdc, VGS = "8.0 Vdc VDS = -16 Vdc, VGS = 0 Vdc VDS = -16 Vdc, VGS = 0 Vdc, TJ = 85°C -20 "100 -1.0 -5.0 Vdc nAdc mAdc Symbol Test Condition Min Typ Max Unit
ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-to-Source On-Resistance VGS(th) RD S ( o n ) VDS = VGS, ID = -250 mAdc VGS = -4.5 Vdc, ID = -4.8 Adc VGS = -2.5 Vdc, ID = -4.2 Adc VGS = -1.8 Vdc, ID = -1.0 Adc VDS = -5.0 Vdc, ID = -4.8 Adc IS = -1.1 Adc, VGS = 0 Vdc -0.45 21 30 42 15 -0.8 -1.5 34 40 52 -1.2 Vdc mW
Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time Gate Charge
gFS VSD
S V
Ci s s Co s s Crss
VDS = -16 Vdc VGS = 0 V f = 1.0 MHz
-
2100 290 200
-
pF
td(on) tr td(off) tf Qg Qgs Qgd
VDD = -16 Vdc VGS = -4.5 Vdc ID = -4.5 Adc RG = 2.0 W VGS = -4.5 Vdc ID = -4.5 Adc VDS = -16 Vdc (Note 3)
-
8.7 14 180 84 25 4.0 7.0
35 -
ns
nC
2. Pulse Test: Pulse Width = 250 ms, Duty Cycle = 2%. 3. Switching characteristics are independent of operating junction temperatures.
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NTHS4101PT1
PACKAGE DIMENSIONS
ChipFET CASE 1206A-03 ISSUE E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. 7. 1206A-01 AND 1206A-02 OBSOLETE. NEW STANDARD IS 1206A-03. DIM A B C D G J K L M S MILLIMETERS MIN MAX 2.95 3.10 1.55 1.70 1.00 1.10 0.25 0.35 0.65 BSC 0.10 0.20 0.28 0.42 0.55 BSC 5 ° NOM 1.80 2.00 INCHES MIN MAX 0.116 0.122 0.061 0.067 0.039 0.043 0.010 0.014 0.025 BSC 0.004 0.008 0.011 0.017 0.022 BSC 5 ° NOM 0.072 0.080
A
8 7 6 5
M K
5 6 3 7 2 8 1
S
1 2 3 4
B
4
L G
D
J
C 0.05 (0.002)
STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8.
DRAIN DRAIN DRAIN GATE SOURCE DRAIN DRAIN DRAIN
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