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Details, datasheet, quote on part number:NTHS4111P
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| Part: | NTHS4111P |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | Power MOSFET -30 V, -6.1 A, Single P-Channel, ChipFET <<<>>> Offers an Ultra Low RDS(on) Solution in The ChipFET Package<<<>>> ChipFET Package 40% Smaller Footprint Than TSOP−6<<<>>> Low Profile (<1.1 Mm) For Extremely Thin Environments<<<>>> Standard Logic Level Gate Drive<<<>>>Applications<<<>>> Notebook Computer Load Switch<<<>>> Battery And Load Management Applications in Portable Equipment<<<>>> Charge Control in Battery Chargers<<<>>> Buck And Boost Converters |
| Company: | ON Semiconductor |
| Datasheet: | Download NTHS4111P datasheet File size : 70 kB |
| Request For quote: | Find where to buy NTHS4111P
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Datasheet text preview:
NTHS4111P Power MOSFET
-30 V, -6.1 A, Single P-Channel, ChipFETt
Features
· · · · · · · ·
Offers an Ultra Low RDS(on) Solution in the ChipFET Package ChipFET Package 40% Smaller Footprint than TSOP-6 Low Profile (<1.1 mm) for Extremely Thin Environments Standard Logic Level Gate Drive
V(BR)DSS -30 V
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RDS(on) TYP 33 mW @ -10 V -6.1 A 52 mW @ -4.5 V S ID MAX
Applications
Notebook Computer Load Switch Battery and Load Management Applications in Portable Equipment Charge Control in Battery Chargers Buck and Boost Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) (Note 1) Steady State t10 s Power Dissipation (Note 1) Steady State t10 s Continuous Drain Current (Note 2) (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25°C TA = 85°C TA = 25°C tp = 10 ms PD IDM TJ, TSTG IS TL ID TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD Symbol VDSS VGS ID Value -30 ±20 -4.4 -3.2 -6.1 1.3 2.5 -3.3 -2.3 0.7 -30 -55 to 150 -2.1 260 W A °C A °C A ChipFET CASE 1206A Style 1 W Unit V V A D P-Channel MOSFET G
PIN CONNECTIONS
D D D S
8 7 6 5 1 2 3 4
MARKING DIAGRAM
1 2 3 4 TH d 8 7 6 5
Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s)
D D D G
THERMAL RESISTANCE RATINGS
Rating Junction-to-Ambient Steady State (Note 1) Junction-to-Ambient t10 s (Note 1) Junction-to-Ambient Steady State (Note 2) Symbol R J A R J A R J A Max 95 50 175 Unit °C/W TH = Specific Device Code d = Date Code
ORDERING INFORMATION
Device NTHS4111PT1 NTHS4111PT1G Package ChipFET ChipFET (Pb-free) Shipping 3000 Tape / Reel 3000 Tape / Reel
1. Surface-mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.045 in sq).
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
April, 2004 - Rev. 0
Publication Order Number: NTHS4111P/D
NTHS4111P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, VDS = -24 V TJ = 25°C TJ = 125°C VGS = 0 V, ID = -250 mA -30 -19 -1.0 -100 ±100 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance
IGSS
VDS = 0 V, VGS = ±20 V VGS = VDS, ID = -250 mA VGS = -10 V, ID = -4.4 A VGS = -4.5 V, ID = -3.4 A
VGS(TH) VGS(TH)/TJ RD S ( o n )
-1.0
-1.7 5.0 33 52 7.7
-3.0
V mV/°C mW
45 75
Forward Transconductance
gFS
VDS = -15 V, ID = -4.4 A
S
CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge CI S S COSS CR S S QG(TOT) QGS QGD VGS = -10 V, VDD = -15 V, 10 V 15 V ID = -4.4 A VGS = 0 V, f = 1.0 MHz, V 1 0 MH VDS = -24 V 882 143 105 18.2 2.95 4.25 28 nC 1500 pF
SWITCHING CHARACTERISTICS, VGS = -10 V (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = -10 V, VDD = -15 V, ID = -1.0 A, RG = 6.0 W 9.0 8.0 45 26 18 16 90 52 ns
SWITCHING CHARACTERISTICS, VGS = -4.5 V (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN - SOURCE DIODE CHARACTERISTICS Characteristic Forward Diode Voltage Symbol VSD Test Condition VGS = 0 V, IS = -1.1 A TJ = 25°C TJ = 125°C Min Typ -0.76 -0.60 27 VGS = 0 V dIS/dt = 100 A/ms, IS = -1.1 A 10 17 12 nC 54 ns Max -1.2 Unit V td(ON) tr td(OFF) tf VGS = -4.5 V, VDD = -15 V, ID = -1.0 A, RG = 6.0 W 11 14 32 23 ns
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge
tRR ta tb QRR
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures.
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NTHS4111P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
12 11 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 VGS = -10 V to -5.0 V -4.5 V -4.2 V -4.0 V -3.8 V -ID, DRAIN CURRENT (AMPS) -3.6 V 12 11 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 1.0 1.5 -55°C VDS = -15 V
-ID, DRAIN CURRENT (AMPS)
-3.4 V
TJ = 100°C
-3.2 V -3.0 V TJ = 25°C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
25°C
2.0
2.5
3.0
3.5
4.0
4.5
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.25 0.100
Figure 2. Transfer Characteristics
ID = -4.4 A TJ = 25°C
TJ = 25°C 0.075 VGS = -4.5 V 0.050 VGS = -10 V 0.025
0.20
0.15
0.10
0.05
0
0 1 2 3 4 5 6 7 8 9 10 11 12 -ID, DRAIN CURRENT (AMPS)
2
3
4
5
6
7
8
9
10
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. RDS(on) vs. VGS
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
100000
1.5 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = -4.4 A VGS = -10 V
VGS = 0 V -IDSS, LEAKAGE (nA)
1.25
10000
TJ = 150°C
1.00
1000
TJ = 100°C
0.75
0.5 -50
-25
0
25
50
75
100
125
150
100 10
20 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
30
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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