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Part: NTHS5402T1
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: N Channel 30 V (D-S) MOSFET, Package: ChipFET, Pins=8
Company: ON Semiconductor
Datasheet: Download NTHS5402T1 datasheet File size : 624 kB
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Datasheet text preview:
NTHS5402T1 Power MOSFET N-Channel ChipFETE
4.9 Amps, 30 Volts
Features
· Low RDS(on) for Higher Efficiency · Miniature ChipFET Surface Mount Package
Applications
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· Power Management in Portable and BatteryPowered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
4.9 AMPS 30 VOLTS RDS(on) = 35 mW
D
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating DrainSource Voltage GateSource Voltage Continuous Drain Current (TJ = 150°C) (Note 1.) TA = 25°C TA = 85°C Pulsed Drain Current Continuous Source Current (Diode Conduction) (Note 1.) Maximum Power Dissipation (Note 1.) TA = 25°C TA = 85°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID "6.7 "4.8 IDM IS PD 2.5 1.3 TJ, Tstg 1.3 0.7 °C 2.1 "20 1.1 "4.9 "3.5 A A W 5 secs 30 "20 Steady State Unit V V A G
S NChannel MOSFET
55 to +150
ChipFET CASE 1206A STYLE 1
1. Surface Mounted on 1 x 1 FR4 Board.
PIN CONNECTIONS
MARKING DIAGRAM
1 2 3 4 A8 8 7 6 5
D D D S
8 7 6 5
1 2 3 4
D D D G
A8 = Specific Device Code
ORDERING INFORMATION
Device NTHS5402T1 Package ChipFET Shipping 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2001
1
June, 2001 Rev. 2
Publication Order Number: NTHS5402T1/D
NTHS5402T1
THERMAL CHARACTERISTICS
Characteristic Maximum JunctiontoAmbient (Note 2.) t v 5 sec Steady State Maximum JunctiontoFoot (Drain) Steady State Symbol Rt h J A 40 80 Rt h J F 15 50 95 20 °C/W Typ Max Unit °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Static Gate Threshold Voltage GateBody Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = 250 µA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 85°C OnState Drain Current (Note 3.) DrainSource OnState Resistance (Note 3.) ID(on) rD S ( o n ) VDS w 5.0 V, VGS = 10 V VGS = 10 V, ID = 4.9 A VGS = 4.5 V, ID = 3.9 A Forward Transconductance (Note 3.) Diode Forward Voltage (Note 3.) Dynamic (Note 4.) Total Gate Charge GateSource Charge GateDrain Charge TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time SourceDrain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.1 A, di/dt = 100 A/µs VDD = 15 V, RL = 15 ID ^ 1.0 A, VGEN = 10 V 10A 10 V, RG = 6 VDS = 15 V VGS = 10 V 15 V, 10 V, ID = 4.9 A 13 1.3 3.1 10 10 25 10 30 20 15 15 40 15 60 ns nC gfs VSD VDS = 10 V, ID = 4.9 A IS = 1.1 A, VGS = 0 V 1.0 20 0.030 0.045 15 0.8 "100 1.0 5.0 0.035 0.055 1.2 S V A V nA µA Symbol Test Condition Min Typ Max Unit
2. Surface Mounted on 1 x 1 FR4 Board. 3. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%. 4. Guaranteed by design, not subject to production testing.
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2
NTHS5402T1
TYPICAL CHARACTERISTICS
20 VGS = 10 thru 5 V 16 ID,Drain Current (A) 4V ID,Drain Current (A) 20
16
12
12
8 3V 4
8 TC125°C 4 25°C TC = 55°C
0
0
0.5
1.0 1.5 2.0 2.5 VDS, DraintoSource Voltage (V)
3.0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS, GatetoSource Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
0.10 r DS(on),OnResistance ( )
1200 1000 C, Capacitance (pF) Ci s s 800 600 400 200 Crss 0 0 4 8 12 ID, Drain Current (A) 16 20 0 6 12 18 24 VDS, DraintoSource Voltage (V) 30 Co s s
0.08
0.06
VGS = 4.5 V VGS = 10 V
0.04
0.02
0
Figure 3. OnResistance vs. Drain Current
Figure 4. Capacitance
10 VGS,GatetoSource Voltage (V) VDS = 15 V ID = 4.9 A r DS(on),OnResistance ( ) (Normalized)
1.6 VGS = 10 V ID = 4.9 A
8
1.4
6
1.2
4
1.0
2
0.8
0
0
3
6 9 Qg, Total Gate Charge (nC)
12
15
0.6 50
25
0 25 50 75 100 TJ, Junction Temperature (°C)
125
150
Figure 5. Gate Charge
Figure 6. OnResistance vs. Junction Temperature
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