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Details, datasheet, quote on part number:NTHS5404T1
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| Part: | NTHS5404T1 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | N Channel 2.5 V (G-S) MOSFET, Package: ChipFET, Pins=8 |
| Company: | ON Semiconductor |
| Datasheet: | Download NTHS5404T1 datasheet File size : 59 kB |
| Request For quote: | Find where to buy NTHS5404T1
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Datasheet text preview:
NTHS5404T1 Power MOSFET N-Channel ChipFETE
5.2 Amps, 20 Volts
Features
· Low RDS(on) for Higher Efficiency · Logic Level Gate Drive · Miniature ChipFET Surface Mount Package Saves Board Space
Applications
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· Power Management in Portable and BatteryPowered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
5.2 AMPS 20 VOLTS RDS(on) = 30 mW
D
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating DrainSource Voltage GateSource Voltage Continuous Drain Current (TJ = 150°C) (Note 1.) TA = 25°C TA = 85°C Pulsed Drain Current Continuous Source Current (Diode Conduction) (Note 1.) Maximum Power Dissipation (Note 1.) TA = 25°C TA = 85°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID "7.2 "5.2 IDM IS PD 2.5 1.3 TJ, Tstg 1.3 0.7 °C 2.1 "20 1.1 "5.2 "3.8 A A W ChipFET CASE 1206A STYLE 1 5 secs 20 "12 Steady State Unit V V A NChannel MOSFET S G
55 to +150
1. Surface Mounted on 1 x 1 FR4 Board.
PIN CONNECTIONS
MARKING DIAGRAM
1 2 3 4 A2 8 7 6 5
D D D S
8 7 6 5
1 2 3 4
D D D G
A2 = Specific Device Code
ORDERING INFORMATION
Device NTHS5404T1 Package ChipFET Shipping 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2001
1
May, 2001 Rev. 1
Publication Order Number: NTHS5404T1/D
NTHS5404T1
THERMAL CHARACTERISTICS
Characteristic Maximum JunctiontoAmbient (Note 2.) t v 5 sec Steady State Maximum JunctiontoFoot (Drain) Steady State Symbol Rt h J A 40 80 Rt h J F 15 50 95 20 °C/W Typ Max Unit °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Static Gate Threshold Voltage GateBody Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = 250 µA VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85°C OnState Drain Current (Note 3.) DrainSource OnState Resistance (Note 3.) ID(on) rD S ( o n ) VDS w 5.0 V, VGS = 4.5 V VGS = 4.5 V, ID = 5.2 A VGS = 2.5 V, ID = 4.3 A Forward Transconductance (Note 3.) Diode Forward Voltage (Note 3.) Dynamic (Note 4.) Total Gate Charge GateSource Charge GateDrain Charge TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time SourceDrain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.1 A, di/dt = 100 A/µs VDD = 10 V, RL = 10 ID ^ 1.0 A, VGEN = 4 5 V 10A 4.5 V, RG = 6 VDS = 10 V VGS = 4 5 V 10 V, 4.5 V, ID = 5.2 A 12 2.4 3.2 20 40 40 15 30 18 30 60 60 23 60 ns nC gfs VSD VDS = 10 V, ID = 5.2 A IS = 1.1 A, VGS = 0 V 0.6 20 0.025 0.038 20 0.8 "100 1.0 5.0 0.030 0.045 1.2 S V A V nA µA Symbol Test Condition Min Typ Max Unit
2. Surface Mounted on 1 x 1 FR4 Board. 3. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%. 4. Guaranteed by design, not subject to production testing.
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NTHS5404T1
TYPICAL ELECTRICAL CHARACTERISTICS
12 ID, DRAIN CURRENT (AMPS) 10 VGS = 2 V 5 V 8 1.6 V 6 4 1.4 V 2 VGS = 1.2 V 0 0 0.5 1 1.5 2 2.5 3 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) 0 0 0.5 1 1.5 2 2.5 VGS, GATETOSOURCE VOLTAGE (VOLTS) TJ = 25°C
5V
2V
1.8 V ID, DRAIN CURRENT (AMPS)
12 10 8 6 4 2 25°C TC = 55°C
125°C
Figure 1. OnRegion Characteristics
RDS(on), DRAINTOSOURCE RESISTANCE () RDS(on), DRAINTOSOURCE RESISTANCE () 0.06 0.05 0.04 0.03 0.02 0.01 0 0 1 2 3 4 5 VGS, GATETOSOURCE VOLTAGE (VOLTS) ID = 5.2 A TJ = 25°C 0.040 0.038 0.036 0.034 0.032 0.030
Figure 2. Transfer Characteristics
TJ = 25°C
VGS = 2.5 V
VGS = 4.5 V 0.028 0.026 0.024 2 3 4 5 6 7 8 9 10 ID, DRAIN CURRENT (AMPS) VGS = 6 V
Figure 3. OnResistance versus GatetoSource Voltage
1.6 RDS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED) ID = 5.2 A VGS = 4.5 V IDSS, LEAKAGE (AMPS) 1.4 1E06 1E05
Figure 4. OnResistance versus Drain Current and Gate Voltage
VGS = 0 V
1.2
TJ = 150°C TJ = 100°C
1
1E07
0.8 0.6 50
1E08 25 0 25 50 75 100 125 150 0 4 8 12 16 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 5. OnResistance Variation with Temperature
Figure 6. DraintoSource Leakage Current versus Voltage
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