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Details, datasheet, quote on part number:NTHS5441T1
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| Part: | NTHS5441T1 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | P Channel 2.5 V (G-S) MOSFET, Package: ChipFET, Pins=8 |
| Company: | ON Semiconductor |
| Datasheet: | Download NTHS5441T1 datasheet File size : 55 kB |
| Request For quote: | Find where to buy NTHS5441T1
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Datasheet text preview:
NTHS5441T1 Power MOSFET P-Channel ChipFETE
3.9 Amps, 20 Volts
Features
· · · ·
Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature ChipFET Surface Mount Package
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Applications
· Power Management in Portable and BatteryPowered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
3.9 AMPS 20 VOLTS RDS(on) = 60 mW
S
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating DrainSource Voltage GateSource Voltage Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C Pulsed Drain Current Continuous Source Current (Note 1) Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID "5.3 "3.8 IDM IS PD 2.5 1.3 TJ, Tstg 1.3 0.7 °C 2.1 "20 1.1 "3.9 "2.8 A A W 5 Secs Steady State Unit V V A
G
20 "12
D PChannel MOSFET
ChipFET CASE 1206A STYLE 1
55 to +150
PIN CONNECTIONS
MARKING DIAGRAM
1 2 3 4 A3 8 7 6 5
1. Surface Mounted on 1 x 1 FR4 Board. D D D S
8 7 6 5 1 2 3 4
D D D G
A3 = Specific Device Code
ORDERING INFORMATION
Device NTHS5441T1 Package ChipFET Shipping 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
1
August, 2002 Rev. 7
Publication Order Number: NTHS5441T1/D
NTHS5441T1
THERMAL CHARACTERISTICS
Characteristic Maximum JunctiontoAmbient (Note 2) t v 5 sec Steady State Maximum JunctiontoFoot (Drain) Steady State Symbol Rt h J A 40 80 Rt h J F 15 50 95 20 °C/W Typ Max Unit °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Static Gate Threshold Voltage GateBody Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85°C OnState Drain Current (Note 3) DrainSource OnState Resistance (Note 3) ID(on) rD S ( o n ) VDS v 5.0 V, VGS = 4.5 V VGS = 3.6 V, ID = 3.7 A VGS = 4.5 V, ID = 3.9 A VGS = 2.5 V, ID = 3.1 A Forward Transconductance (Note 3) Diode Forward Voltage (Note 3) Dynamic (Note 4) Total Gate Charge GateSource Charge GateDrain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time SourceDrain Reverse Recovery Time Qg Qgs Qgd Ci s s Co s s Crss td(on) tr td(off) tf trr IF = 1.1 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1.0 A, VGEN = 4 5 V 1 0 A 4.5 V, RG = 6 W VDS = 5.0 Vdc, VGS = 0 Vdc, 5 0 Vd Vd f = 1.0 MHz VDS = 10 V VGS = 4.5 V 10 V, 4 5 V, ID = 3.9 A 11 3.0 2.5 710 400 140 14 22 42 35 30 22 30 55 100 70 60 ns pF nC gfs VSD VDS = 10 V, ID = 3.9 A IS = 1.1 A, VGS = 0 V 0.6 20 0.050 0.046 0.070 12 0.8 1.2 "100 1.0 5.0 0.06 0.083 1.2 mhos V A W V nA mA Symbol Test Condition Min Typ Max Unit
2. Surface Mounted on 1 x 1 FR4 Board. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Guaranteed by design, not subject to production testing.
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NTHS5441T1
TYPICAL ELECTRICAL CHARACTERISTICS
20 ID, DRAIN CURRENT (AMPS)
5V
3.5 V
3V TJ = 25°C ID, DRAIN CURRENT (AMPS)
20 TJ = 55°C 16 25°C 12 125°C
16 4.5 V 4V 12
2.5 V
8 2V 4 0 0 0.5 1 1.5 2 VGS = 1.5 V
8
4 0
2.5
3
0
0.5
1
1.5
2
2.5
3
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
RDS(on), DRAINTOSOURCE RESISTANCE (W) RDS(on), DRAINTOSOURCE RESISTANCE (W) 0.2 ID = 3.9 A TJ = 25°C 0.15 0.2
Figure 2. Transfer Characteristics
TJ = 25°C 0.15 VGS = 2.5 V 0.1 VGS = 3.6 V 0.05 VGS = 4.5 V
0.1
0.05
0 0 1 2 3 4 5 VGS, GATETOSOURCE VOLTAGE (VOLTS)
0 2 6 10 14 18 20 ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus GatetoSource Voltage
1.6 RDS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED) ID = 3.9 A VGS = 4.5 V 1.4
Figure 4. OnResistance versus Drain Current and Gate Voltage
1.2
1
0.8 0.6 50
25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with Temperature
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