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Details, datasheet, quote on part number:NTQD6968
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Datasheet text preview:
NTQD6968 Power MOSFET 6.6 Amps, 20 Volts
NChannel TSSOP8
Features
· · · · · ·
Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual TSSOP8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery Micro8 Mounting Information Provided
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Applications
· Power Management in Portable and BatteryPowered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA 25°C Drain Current Continuous @ TA 70°C Drain Current Pulsed (Note 3) Total Power Dissipation @ TA 25°C Drain Current Continuous @ TA 25°C Drain Current Continuous @ TA 70°C Drain Current Pulsed (Note 3) Total Power Dissipation @ TA 25°C Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 5.5 Apk, L = 10 mH, RG = 25 ) Thermal Resistance JunctiontoAmbient (Note 1) JunctiontoAmbient (Note 2) Maximum Lead Temperature for Soldering Purposes for 10 seconds Symbol VDSS VGS ID ID IDM PD ID ID IDM PD TJ, Tstg EAS Value 20 "12 5.4 4.5 15 0.94 6.6 4.5 20 1.42 55 to +150 150 Unit Vdc Vdc Adc G1
6.6 AMPERES 20 VOLTS RDS(on) = 22 m
NChannel D NChannel D
G2 S1 S2
W Adc 8 W °C mJ 1 TSSOP8 CASE 948S PLASTIC
MARKING DIAGRAM & PIN ASSIGNMENT
D S1 S1 G1 1 2 3 4 968 YWW N Top View 968 Y WW N = Device Code = Year = Work Week = MOSFET 8 7 6 5 D S2 S2 G2
Rq J A
°C/W 132 88 260 °C
TL
1. Minimum FR4 or G10 PCB, Steady State. 2. Mounted onto a 2 square FR4 Board (1 sq. 2oz. Cu 0.06 thick single sided), Steady State. 3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.
ORDERING INFORMATION
Device NTQD6968 NTQD6968R2 Package TSSOP8 TSSOP8 Shipping 100 Units/Rail 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2001
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November, 2001 Rev. 0
Publication Order Number: NTQD6968/D
NTQD6968
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C) GateBody Leakage Current (VGS = ±12 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static DraintoSource OnState Resistance (VGS = 4.5 Vdc, ID = 6.6 Adc) (VGS = 2.5 Vdc, ID = 5.3 Adc) (VGS = 2.5 Vdc, ID = 3.3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 6.6 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 4 & 5) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (VDS = 16 Vdc, 16 Vdc, VGS = 4.5 Vdc, ID = 6.6 Adc) 6 6 Ad ) (VDD = 16 Vdc, ID = 6.6 Adc, VGS = 4.5 Vdc, RG = 6.0 ) td(on) tr td(off) tf Qtot Qgs Qgd 9.0 35 70 70 13.5 3.0 4.0 20 nC ns (VDS = 16 Vd VGS = 0 Vdc, 16 Vdc, Vd f = 1.0 MHz) Ciss Coss Cr s s 900 350 100 pF VGS(th) 0.6 RDS(on) gFS 19.2 0.022 0.030 0.030 Mhos 0.75 2.5 1.2 Vdc mV/°C V(BR)DSS 20 IDSS IGSS 1.0 10 nAdc ±100 12 Vdc mV/°C µAdc Symbol Min Typ Max Unit
BODYDRAIN DIODE RATINGS (Note 4) Forward OnVoltage Reverse Recovery Time (IS = 6.15 Adc, VGS = 0 Vdc, 6 15 Ad Vd dIS/dt = 100 A/µs) Reverse Recovery Stored Charge 4. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%. 5. Switching characteristics are independent of operating junction temperature. (IS = 6.0 Adc, VGS = 0 Vdc) VSD trr ta tb Q RR 30 19 15 0.017 1.2 µC Vdc ns
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NTQD6968
16 ID, DRAIN CURRENT (AMPS) 14 12 10 2.2 V 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) 2 1.4 V 1.2 V 1.6 V 5V 3V 2V VGS = 10 V 18 TJ = 25°C 1.8 V ID, DRAIN CURRENT (AMPS) 16 14 12 10 8 6 4 2 0 0.75 TJ = 25°C TJ = 100°C TJ = 55°C 2.5 VDS 10 V
1 1.25 1.75 2.25 1.5 2 VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
RDS(on), DRAINTOSOURCE RESISTANCE () RDS(on), DRAINTOSOURCE RESISTANCE ()
Figure 2. Transfer Characteristics
0.03 ID = 6.5 A TJ = 25°C
0.04 TJ = 25°C 0.035 0.03 0.025 0.02 VGS = 4.5 V 0.015 0.01 VGS = 2.5 V
0.02
0.01
0
2
4
6
8
2
4
6
8
10
12
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VGS, GATETOSOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus GatetoSource Voltage
RDS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED) 2 ID = 3.3 A VGS = 4.5 V 1.5 10000
Figure 4. OnResistance versus Drain Current and Gate Voltage
VGS = 0 V IDSS, LEAKAGE (nA) TJ = 150°C 1000
1
100 TJ = 100°C 10
0.5
0 50
1 25 0 25 50 75 100 125 150 4 8 12 16 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 5. OnResistance Variation with Temperature
Figure 6. DraintoSource Leakage Current versus Voltage
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