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Details, datasheet, quote on part number:NTQD6968NR2
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Datasheet text preview:
NTQD6968N Power MOSFET
7.0 A, 20 V, Common Drain, Dual N-Channel, TSSOP-8
Features
· · · · · ·
Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive 3 mm Wide TSSOP-8 Surface Mount Package High Speed, Soft Recovery Diode TSSOP-8 Mounting Information Provided
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V(BR)DSS 20 V
RDS(on) TYP 17 mW @ 4.5 V
ID MAX 7.0 A N-Channel D
Applications
N-Channel D
· Battery Protection Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA 25°C (Note 1) Drain Current - Continuous @ TA 70°C (Note 1) Drain Current - Pulsed (Note 3) Total Power Dissipation @ TA 25°C (Note 1) Drain Current - Continuous @ TA 25°C (Note 2) Drain Current - Continuous @ TA 70°C (Note 2) Drain Current - Pulsed (Note 3) Total Power Dissipation @ TA 25°C (Note 2) Operating and Storage Temperature Range Thermal Resistance - Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes for 10 seconds Symbol VDSS VGS ID ID IDM PD ID ID IDM PD TJ, Tstg Rq J A Value 20 "12 7.0 5.6 20 1.81 6.2 4.9 18 1.39 - 55 to +150 69 90 260 °C Unit Vdc Vdc Adc 8 W Adc G1
G2 S1 TSSOP-8 CASE 948S PLASTIC 1 S2
MARKING DIAGRAM & PIN ASSIGNMENT
W °C °C/W D S1 S1 G1 1 2 3 4 E68 YWW N Top View E68 Y WW N = Device Code = Year = Work Week = MOSFET 8 7 6 5 D S2 S2 G2
TL
1. Mounted onto a 2 square FR-4 Board (1 sq. 2 oz. Cu 0.06 thick single sided), t 10 sec. 2. Mounted onto a 2 square FR-4 Board (1 sq. 2 oz. Cu 0.06 thick single sided), Steady State. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
ORDERING INFORMATION
Device NTQD6968NR2 Package TSSOP-8 Shipping 4000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
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December, 2003 - Rev. 1
Publication Order Number: NTQD6968N/D
NTQD6968N
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate-Body Leakage Current (VGS = ±12 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) Static Drain-to-Source On-State Resistance (VGS = 4.5 Vdc, ID = 7.0 Adc) (VGS = 2.5 Vdc, ID = 7.0 Adc) (VGS = 2.5 Vdc, ID = 3.5 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 7.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 4 and 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 16 Vdc, 16 Vdc VGS = 4.5 Vdc, ID = 7.0 Adc) 7 0 Adc) (VDD = 16 Vdc, ID = 7.0 Adc, VGS = 4.5 Vdc, RG = 6.0 W) td(on) tr td(off) tf Qtot Qgs Qgd - - - - - - - 8.0 25 60 65 12.5 1.0 5.0 - - - - 17 - - nC ns (VDS = 16 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ci s s Co s s Crss - - - 630 260 95 - - - pF VGS(th) 0.6 - RD S ( o n ) - - - gFS - 0.017 0.022 0.022 19.2 0.022 0.030 0.030 - Mhos 0.75 3.0 1.2 - Vdc mV/°C W V(BR)DSS 20 - IDSS - - IGSS - - - - 1.0 10 ±100 nAdc - 16 - - Vdc mV/°C mAdc Symbol Min Typ Max Unit
BODY-DRAIN DIODE RATINGS (Note 4) Forward On-Voltage Reverse Recovery Time (IS = 7.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. 5. Switching characteristics are independent of operating junction temperature. (IS = 7.0 Adc, VGS = 0 Vdc) VSD trr ta tb QRR - - - - - 0.82 35 15 20 0.02 1.2 - - - - mC Vdc ns
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NTQD6968N
14 VGS = 10, 5, 3 and 2.2 V resp. ID, DRAIN CURRENT (AMPS) 12 10 8 6 4 2 0 0 1 1.2 1.4 1.6 1.8 0.2 0.4 0.6 0.8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2 1.2 V 1.4 V 1.8 V TJ = 25°C 1.6 V ID, DRAIN CURRENT (AMPS) 12 10 8 6 TJ = 125°C 4 2 0 0 TJ = 25°C TJ = -55°C 1.5 2 1 0.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2.5 14 VDS 10 V
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE () RDS(on), DRAIN-TO-SOURCE RESISTANCE ()
Figure 2. Transfer Characteristics
0.03 ID = 7.0 A TJ = 25°C 0.02
0.04 TJ = 25°C 0.035 0.03 0.025 VGS = 2.5 V 0.02 0.015 0.01
0.01
VGS = 4.5 V 2 4 6 8 10 12 14
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance versus Gate-to-Source Voltage
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2 ID = 3.5 A VGS = 4.5 V IDSS, LEAKAGE (nA) 1.5 10000 100000
Figure 4. On-Resistance versus Drain Current and Gate Voltage
VGS = 0 V
1
TJ = 150°C 1000 TJ = 125°C
0.5
0 -50
100 -25 0 25 50 75 100 125 150 0 4 8 12 16 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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