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Details, datasheet, quote on part number:NTR0202PLT1G
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Datasheet text preview:
NTR0202PL Power MOSFET
-20 V, -400 mA, P-Channel SOT-23 Package
Features
· Low RDS(on) Provides Higher Efficiency and Extends Battery Life
RDSon = 0.80 W, VGS = -10 V RDSon = 1.10 W, VGS = -4.5 V · Miniature SOT-23 Surface Mount Package Saves Board Space · Pb-Free Package is Available
Applications
V(BR)DSS -20 V
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RDS(on) TYP 550 mW @ -10 V ID MAX -400 mA
· · · · ·
DC-DC Converters Computers Printers PCMCIA Cards Cellular and Cordless Telephones
P-Channel D
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Continuous Drain Current @ TA = 25°C Pulsed Drain Current (tp 10 ms) Total Power Dissipation @ TA = 25°C (Note 1) Operating and Storage Temperature Range Thermal Resistance - Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 s Symbol VDSS VGS ID IDM PD TJ, Tstg Rq J A TL Value -20 $20 -0.4 -1.0 225 - 55 to 150 556 260 Unit V V A mW °C °C/W °C 3
S
MARKING DIAGRAM/ PIN ASSIGNMENT
3 Drain 1 2 SOT-23 CASE 318 STYLE 21 PLW
1 Gate PL W
2 Source
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
= Specific Device Code = Work Week
ORDERING INFORMATION
Device NTR0202PLT1 Package SOT-23 Shipping 3000 Tape & Reel 3000 Tape & Reel
NTR0202PLT1G SOT-23 (Pb-Free) NTR0202PLT3 SOT-23
10,000 Tape & Reel 10,000 Tape & Reel
NTR0202PLT3G SOT-23 (Pb-Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
July, 2004 - Rev. 2
Publication Order Number: NTR0202PL/D
NTR0202PL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 V, ID = -10 mA) (Positive Temperature Coefficient) Zero Gate Voltage Drain Current (VDS = -20 V, VGS = 0 V, TJ = 25°C) (VDS = -20 V, VGS = 0 V, TJ = 150°C) Gate-Body Leakage Current (VGS = ± 20 V, VDS = 0 V) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (VDS = VGS, ID = -250 mA) (Negative Temperature Coefficient) Static Drain-to-Source On-Resistance (VGS = -10 V, ID = -200 mA) (VGS = -4.5 V, ID = -50 mA) Forward Transconductance (VDS = -10 V, ID = -200 mA) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge BODY-DRAIN DIODE CHARACTERISTICS (Note 2) Diode Forward Voltage (Note 2) (IS = -400 mA, VGS = 0 V) (IS = -400 mA, VGS = 0 V, TJ = 150°C) Reverse Recovery Time (IS = -1.0 A, VGS = 0 V, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge (IS = -1.0 A, VGS = 0 V, dIS/dt = 100 A/ms) VSD -0.8 -0.65 trr ta tb QRR 11.8 9 3 0.007 mC -1.0 ns V (VDS = -15 V, ID = -200 mA, VGS = -10 V) (VDD = -15 V, ID = -200 mA, VGS = -10 V, RG = 6.0 W) td(on) tr td(off) tf QTOT QGS QGD 3.0 6.0 18 4 2.18 0.41 0.40 nC ns (VDS = -5.0 V, VGS = 0 V, F = 1.0 MHz) Ci s s Co s s Crss 70 74 26 pF VGS(th) -1.1 RD S ( o n ) 0.55 0.80 gfs 0.5 0.80 1.10 Mhos -1.9 3.0 -2.3 V mV/°C W V(BR)DSS -20 33 IDSS -1.0 -10 IGSS ±100 nA V mV/°C mA Symbol Min Typ Max Unit
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperature.
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NTR0202PL
0.75 -ID, DRAIN CURRENT (AMPS) -6 V 0.5 -5.5 V -5 V -3.5 V -3 V -4.5 V -2.5 V 0 0 0.25 0.5 0.75 1.0 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -4 V -ID, DRAIN CURRENT (AMPS) VGS = -10 V TJ = 25°C 1 VDS -10 V
0.75
TJ = 125°C
0.5 TJ = 25°C 0.25
0.25
TJ = 40°C
0 0 1 2 3 4 5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
1.5 TJ = 150°C
1.0
0.75
VGS = -4.5 V
1 TJ = 25°C
VGS = -10 V 0.5
0.5 TJ = 40°C
0.25
0 0.125
0.25
0.375
0.5
0 0.125
0.25
0.375
0.5
0.625
0.75
0.875 1.0
-ID, DRAIN CURRENT (AMPS)
-ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance versus Drain Current
Figure 4. On-Resistance versus Drain Current and Gate Voltage
1000 VGS = 0 V TJ = 150°C -IDSS, LEAKAGE (nA) 100
2.5 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
2
1.5
ID = -0.05 A VGS = -4.5 V ID = -0.2 A VGS = -10 V
10
1
0.5
1
TJ = 25°C
0 -40
0.1 -15 10 35 60 85 110 135 150 2 6 10 14 18
TJ, JUNCTION TEMPERATURE (°C)
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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