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Details, datasheet, quote on part number:NTR0202PLT3
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Datasheet text preview:
NTR0202PLT1 Advance Information Power MOSFET 400 mA, 20 V
P-Channel SOT-23 Package
Features http://onsemi.com
· Low RDS(on) Provides Higher Efficiency and Extends Battery Life
RDson = 0.80 W, VGS = 10 V RDson = 1.10 W, VGS = 4.5 V · Miniature SOT-23 Surface Mount Package Saves Board Space
Applications
400 mA 20 V 550 mW @ VGS = 10 V (Typ)
P-Channel 3
· · · · ·
Dc-Dc Converters Computers Printers PCMCIA Cards Cellular and Cordless Telephones
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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Continuous Drain Current @ TA = 25°C Pulsed Drain Current (tp 10 ms) Total Power Dissipation @ TA = 25°C (Note 1) Operating and Storage Temperature Range Thermal Resistance - Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg Rq J A TL Value 20 $20 0.4 1.0 225 - 55 to 150 556 260 Unit Vdc Vdc A mW °C °C/W °C
3
2
MARKING DIAGRAM
1 2
SOT-23 CASE 318 STYLE 21
PL W
PL W
= Device Code = Work Week
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
PIN ASSIGNMENT
3
Drain
1
2
Gate
Source
ORDERING INFORMATION
Device NTR0202PLT1 NTR0202PLT3
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Package SOT-23 SOT-23
Shipping 3000 Tape & Reel 10,000 Tape & Reel
© Semiconductor Components Industries, LLC, 2002
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November, 2002 - Rev. 0
Publication Order Number: NTR0202PLT1/D
NTR0202PLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mA) (Positive Temperature Coefficient) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C) Gate-Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) (Negative Temperature Coefficient) Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 200 mAdc) (VGS = 4.5 Vdc, ID = 50 mAdc) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge BODY-DRAIN DIODE CHARACTERISTICS (Note 2) Diode Forward Voltage (Note 2) (IS = 400 mAdc, VGS = 0 V) (IS = 400 mAdc, VGS = 0 V, TJ = 150°C) Reverse Recovery Time (IS = 1.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge (IS = 1.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) VSD trr ta tb QRR 0.8 0.65 11.8 9 3 0.007 1.0 mC ns Vdc (VDS = 15 Vdc, ID = 200 mAdc, VGS = 10 Vdc) 10 Vdc) (VDD = 15 Vdc, ID = 200 mAdc, VGS = 10 V, RG = 6.0 W) td(on) tr td(off) tf QTOT QGS QGD 3.0 6.0 18 4 2.18 0.41 0.40 nC ns (VDS = 5.0 Vdc, VGS = 0 Vdc, F = 1 0 MHz) 1.0 MHz) Ci s s Co s s Crss 70 74 26 pF VGS(th) 1.1 RD S ( o n ) gfs 0.55 0.80 0.5 0.80 1.10 Mhos 1.9 3.0 2.3 Vdc mV/°C W V(BR)DSS 20 IDSS IGSS 1.0 10 ±100 nAdc 33 Vdc mV/°C mAdc Symbol Min Typ Max Unit
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperature.
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NTR0202PLT1
0.75 ID, DRAIN CURRENT (AMPS) VGS = 6 V 0.5 VGS = 5.5 V VGS = 5 V VGS = 3.5 V 0.25 VGS = 4.5 V VGS = 3 V VGS = 2.5 V 0 0 0.25 0.5 0.75 1.0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS = 4 V ID, DRAIN CURRENT (AMPS) VGS = 10 V TJ = 25°C 1 VDS 10 V
0.75
TJ = 125°C
0.5 TJ = 25°C 0.25
TJ = 40°C
0 0 1 2 3 4 5 VGS, GATE-T O-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
1.5 TJ = 150°C
1.0
0.75
Vgs = 4.5 V
1 TJ = 25°C
Vgs = 10 V 0.5
0.5 TJ = 40°C
0.25
0 0.125
0.25
0.375
0.5
0 0.125
0.25
0.375
0.5
0.625
0.75
0.875 1.0
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance versus Gate-to-Source Voltage
2.5 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1000
Figure 4. On-Resistance versus Drain Current and Gate Voltage
VGS = 0 V 2 IDSS, LEAKAGE (nA) 100 TJ = 150°C
1.5
ID = 0.05 A VGS = 4.5 V ID = 0.2 A VGS = 10 V
10
1
0.5
1
TJ = 25°C
0 -40
0.1 -15 10 35 60 85 110 135 150 2 6 10 14 18
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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