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Details, datasheet, quote on part number:NTR1P02
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Datasheet text preview:
NTR1P02T1 Power MOSFET
-20 V, -1 A, P-Channel SOT-23 Package
Features
· Ultra Low On-Resistance Provides Higher Efficiency
and Extends Battery Life RDS(on) = 0.180 W, VGS = -10 V RDS(on) = 0.280 W, VGS = -4.5 V · Power Management in Portable and Battery-Powered Products · Miniature SOT-23 Surface Mount Package Saves Board Space · Mounting Information for SOT-23 Package Provided
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V(BR)DSS -20 V
RDS(on) TYP 148 mW @ -10 V
ID MAX -1.0 A
· · · · ·
P-Channel D
DC-DC Converters Computers Printers PCMCIA Cards Cellular and Cordless Telephones
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25°C - Pulsed Drain Current (tp 1 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Thermal Resistance - Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, (1/8 from case for 10 s) Symbol VDSS VGS ID IDM PD TJ, Tstg Rq J A TL Value -20 ±20 -1.0 -2.67 400 - 55 to 150 300 260 mW °C °C/W °C P2 W Unit V V A 1 2 SOT-23 CASE 318 STYLE 21 3
S
MARKING DIAGRAM/ PIN ASSIGNMENT
3 Drain
P2W
1 Gate
2 Source
= Specific Device Code = Work Week
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device NTR1P02T1 NTR1P02T3 Package SOT-23 SOT-23 Shipping 3000/Tape & Reel 10,000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
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July, 2004 - Rev. 3
Publication Order Number: NTR1P02T1/D
NTR1P02T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 V, ID = -10 mA) (Positive Temperature Coefficient) Zero Gate Voltage Drain Current (VDS = -20 V, VGS = 0 V, TJ = 25°C) (VDS = -20 V, VGS = 0 V, TJ = 150°C) Gate-Body Leakage Current (VGS = ±20 V, VDS = 0 V) ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = -250 mA) (Negative Temperature Coefficient) Static Drain-to-Source On-State Resistance (VGS = -10 V, ID = -1.5 A) (VGS = -4.5 V, ID = -0.75 A) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = -5 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance (VDS = -5 V, VGS = 0 V, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = -5 V, VGS = 0 V, f = 1.0 MHz) SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time (VDD = -15 V, ID = -1 A, VGS = -5 V, RG = 2.5 W) Rise Time (VDD = -15 V, ID = -1 A, VGS = -5 V, RG = 2.5 W) Turn-Off Delay Time (VDD = -15 V, ID = -1 A, VGS = -5 V, RG = 2.5 W) Fall Time (VDD = -15 V, ID = -1 A, VGS = -5 V, RG = 2.5 W) Total Gate Charge (VDS = -15 V, VGS = -5 V, ID = -0.8 A) Gate-Source Charge (VDS = -15 V, VGS = -5 V, ID = -0.8 A) Gate-Drain Charge (VDS = -15 V, VGS = -5 V, ID = -0.8 A) BODY-DRAIN DIODE RATINGS (Note 1) Diode Forward On-Voltage (Note 2) (IS = -0.6 A, VGS = 0 V) (IS = -0.6 A, VGS = 0 V, TJ = 150°C) Reverse Recovery Time (IS = -1 A, dIS/dt = 100 A/ 1 A dI 100 A/ms, VGS = 0 V) V) VSD -0.8 -0.6 trr ta tb Reverse Recovery Stored Charge (IS = -1 A, dIS/dt = 100 A/ms, VGS = 0 V) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. QRR 13.5 10.5 3.0 0.008 mC -1.0 ns V td(on) tr td(off) tf Qtot Qgs Qgd 7.0 9.0 9.0 3.0 2.5 0.75 1.0 nC ns Ci s s Co s s Crss 165 110 35 pF VGS(th) -1.1 RD S ( o n ) 0.148 0.235 0.180 0.280 -1.9 -4.0 -2.3 V mV/°C W V(BR)DSS -20 32 IDSS -1.0 -10 IGSS ±100 nA V mV/°C mA Symbol Min Typ Max Unit
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NTR1P02T1
2.5 -ID, DRAIN CURRENT (AMPS) 2.25 2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 0 VGS = -2.5 V 1.5 0.75 1 1.75 0.25 0.5 1.25 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2 -3 V -4.5 V -4 V -3.5 V TJ = 25°C -ID, DRAIN CURRENT (AMPS) 2 1.75 1.5 1.25 1 0.75 TJ = 125°C 0.5 0.25 0 1 2.5 3 3.5 1.5 2 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4 TJ = -40°C VDS -10 V TJ = 25°C
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -ID, DRAIN CURRENT (AMPS) TJ = 25°C TJ = -40°C VGS = -4.5 V TJ = 150°C
0.275 0.25 0.225 0.2 0.175 0.15 0.125 0.1 0.075 0.05 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -ID, DRAIN CURRENT (AMPS) TJ = -40°C TJ = 25°C VGS = -10 V TJ = 150°C
Figure 3. On-Resistance versus Drain Current and Temperature
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2.5 ID = -1.5 A VGS = -10 V 1000
Figure 4. On-Resistance versus Drain Current and Temperature
VGS = 0 V -IDSS, LEAKAGE (nA) 2 TJ = 150°C 100
1.5
TJ = 125°C 10
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0.5 0 -45 1 -20 5 30 55 80 105 130 155 1 3 5 7 9 11 13 15 17 19 21 TJ, JUNCTION TEMPERATURE (°C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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