|
Details, datasheet, quote on part number:NTR1P02LT1
| |
| Part: | NTR1P02LT1 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | Power MOSFET 1.3 Amps, 20 Volts, Package: SOT-23 (TO-236), Pins=3 |
| Company: | ON Semiconductor |
| Datasheet: | Download NTR1P02LT1 datasheet File size : 50 kB |
| Request For quote: | Find where to buy NTR1P02LT1
|
| |
Datasheet text preview:
NTR1P02LT1 Advance Information Power MOSFET 1.3 Amps, 20 Volts
P-Channel SOT-23
These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. · Low RDS(on) Provides Higher Efficiency and Extends Battery Life · Miniature SOT-23 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25°C - Pulsed Drain Current (tp 10 µs) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Thermal Resistance - Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg R J A TL Value 20 12 1.3 4.0 400 - 55 to 150 300 260 Unit Vdc Vdc A A mW °C °C/W °C
1 2 3
http://onsemi.com
1.3 AMPS 20 VOLTS RDS(on) = 160 mW
P-Channel 3
1
2
MARKING DIAGRAM
SOT-23 CASE 318 STYLE 21
PO2 W
PO2 W
= Device Code = Work Week
PIN ASSIGNMENT
3 Drain
1 Gate
2 Source
ORDERING INFORMATION
Device NTR1P02LT1 NTR1P02LT3
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Package SOT-23 SOT-23
Shipping 3000 Tape & Reel 10,000 Tape & Reel
© Semiconductor Components Industries, LLC, 2001
1
December, 2001 - Rev. 0
Publication Order Number: NTR1P02LT1/D
NTR1P02LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 µAdc) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate-Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Static Drain-to-Source On-Resistance (VGS = 4.5 Vdc, ID = 0.75 Adc) (VGS = 2.5 Vdc, ID = 0.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time Total Gate Charge (VDS = 16 Vdc, ID = 1.5 Adc, VGS = 4.0 Vdc) (VDD = 5.0 Vdc, ID = 1.0 Adc, RL = 5.0 , RG = 6.0 ) td(on) tr td(off) tf QT 7.0 15 18 20 5500 pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ci s s Co s s Crss 225 130 55 pF VGS(th) rD S ( o n ) 0.135 0.190 0.16 0.25 0.7 1.0 1.25 Vdc V(BR)DSS IDSS IGSS 1.0 10 ±100 nAdc 20 Vdc µAdc Symbol Min Typ Max Unit
SOURCE-DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 2) (VGS = 0 Vdc, IS = 0.6 Adc) Reverse Recovery Time (IS = 1.0 Adc, VGS = 0 Vdc, 1 0 Ad Vd dIS/dt = 100 A/µs) Reverse Recovery Stored Charge 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. IS ISM VSD trr ta tb QRR 16 11 5.5 0.0085 0.6 0.75 1.0 µC V ns A
http://onsemi.com
2
NTR1P02LT1
2.5 ID, DRAIN CURRENT (AMPS) VGS = 3 V 2.8 V 2.6 V 1.5 2.4 V 2.2 V 1 1.6 V 1.8 V 1.4 ID, DRAIN CURRENT (AMPS) 2V TJ = 25°C 1.2 1 0.8 0.6 0.4 0.2 0 0 4 1 2 3 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 5 1 1.2 1.4 1.6 1.8 2 2.2 2.4 VGS, GATE-T O-SOURCE VOLTAGE (VOLTS) TJ = 25°C TJ = 100°C TJ = -55°C VDS 10 V
2
0.5
1.2 V
1.4 V
0
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE () RDS(on), DRAIN-TO-SOURCE RESISTANCE ()
Figure 2. Transfer Characteristics
0.04 ID = 10 A TJ = 25°C 0.03
0.3 0.25 0.2 0.15 0.1 0.05 0 0.2 TJ = 25°C VGS = 2.5 V TJ = 100°C TJ = 25°C TJ = -55°C
0.02
0.01
0
0
2
4
6
8
10
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
VGS, GATE-T O-SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance versus Gate-to-Source Voltage
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 0.3 IDSS, LEAKAGE (nA) ID = 0.5 A VGS = 2.5 V 0.2 1000
Figure 4. On-Resistance versus Drain Current and Gate Voltage
VGS = 0 V 100 TJ = 125°C
10
TJ = 100°C
1
0.1
0.1
TJ = 25°C
0 -50
-25
0
25
50
75
100
125
150
0.01
4
8
12
16
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
http://onsemi.com
3
|
|
