|
Details, datasheet, quote on part number:NTR1P02T1
| |
| Part: | NTR1P02T1 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | Power MOSFET 1 Amps, 20 Volts P Channel SOT-23, Package: SOT-23 (TO-236), Pins=3 |
| Company: | ON Semiconductor |
| Datasheet: | Download NTR1P02T1 datasheet File size : 54 kB |
| Request For quote: | Find where to buy NTR1P02T1
|
| |
Datasheet text preview:
NTR1P02T1 Power MOSFET 1 Amp, 20 Volts
P-Channel SOT-23 Package
Features
· Ultra Low On-Resistance Provides Higher Efficiency
and Extends Battery Life RDS(on) = 0.180 W, VGS = 10 V RDS(on) = 0.280 W, VGS = 4.5 V · Power Management in Portable and Battery-Powered Products · Miniature SOT-23 Surface Mount Package Saves Board Space · Mounting Information for SOT-23 Package Provided
Applications
http://onsemi.com
1 AMPERE 20 VOLTS 148 mW @ VGS = 10 V (Typ)
P-Channel 3
· · · · ·
DC-DC Converters Computers Printers PCMCIA Cards Cellular and Cordless Telephones
1
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25°C - Pulsed Drain Current (tp 1 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Thermal Resistance - Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg Rq J A TL Value 20 ±20 1.0 2.67 400 - 55 to 150 300 260 mW °C °C/W °C Unit Vdc Vdc A
1 2 3
MARKING DIAGRAM
SOT-23 CASE 318 STYLE 21
P2 W
P2 W
= Device Code = Work Week
PIN ASSIGNMENT
3 Drain
1 Gate
2 Source
ORDERING INFORMATION
Device NTR1P02T1 NTR1P02T3 Package SOT-23 SOT-23 Shipping 3000/Tape & Reel 10,000/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
1
November, 2002 - Rev. 1
Publication Order Number: NTR1P02T1/D
NTR1P02T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mAdc) (Positive Temperature Coefficient) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C) Gate-Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) (Negative Temperature Coefficient) Static Drain-to-Source On-State Resistance (VGS = 10 Vdc, ID = 1.5 Adc) (VGS = 4.5 Vdc, ID = 0.75 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Output Capacitance (VDS = 5 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 5 Vdc, VGS = 0 Vdc, f = 1.0 MHz) SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time (VDD = 15 Vdc, ID = 1 A, VGS = 5 Vdc, RG = 2.5 W) Rise Time (VDD = 15 Vdc, ID = 1 A, VGS = 5 Vdc, RG = 2.5 W) Turn-Of f Delay Time (VDD = 15 Vdc, ID = 1 A, VGS = 5 Vdc, RG = 2.5 W) Fall Time (VDD = 15 Vdc, ID = 1 A, VGS = 5 Vdc, RG = 2.5 W) Total Gate Charge (VDS = 15 Vdc, VGS = 5 Vdc, ID = 0.8 A) Gate-Source Charge (VDS = 15 Vdc, VGS = 5 Vdc, ID = 0.8 A) Gate-Drain Charge (VDS = 15 Vdc, VGS = 5 Vdc, ID = 0.8 A) BODY-DRAIN DIODE RATINGS (Note 1) Diode Forward On-Voltage (Note 2) (IS = 0.6 Adc, VGS = 0 V) (IS = 0.6 Adc, VGS = 0 V, TJ = 150°C) Reverse Recovery Time (IS = 1 A dIS/dt = 100 A/ A, dI 100 A/ms, VGS = 0 V) V) VSD trr ta tb Reverse Recovery Stored Charge (IS = 1 A, dIS/dt = 100 A/ms, VGS = 0 V) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. QRR 0.8 0.6 13.5 10.5 3.0 0.008 1.0 mC ns Vdc td(on) tr td(off) tf Qtot Qgs Qgd 7.0 9.0 9.0 3.0 2.5 0.75 1.0 nC ns Ci s s Co s s Crss 165 110 35 pF VGS(th) 1.1 RD S ( o n ) 0.148 0.235 0.180 0.280 1.9 -4.0 2.3 Vdc mV/°C W V(BR)DSS 20 IDSS IGSS 1.0 10 ±100 nAdc 32 Vdc mV/°C mAdc Symbol Min Typ Max Unit
http://onsemi.com
2
NTR1P02T1
2.5 ID, DRAIN CURRENT (AMPS) 2.25 2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 0 VGS = 2.5 V 1.5 0.75 1 1.75 0.25 0.5 1.25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2 3V 4.5 V 4V 3.5 V TJ = 25°C ID, DRAIN CURRENT (AMPS) 2 1.75 1.5 1.25 1 0.75 TJ = 125°C 0.5 0.25 0 1 2.5 3 3.5 1.5 2 VGS, GATE-T O-SOURCE VOLTAGE (VOLTS) 4 TJ = -40°C VDS 10 V TJ = 25°C
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 ID, DRAIN CURRENT (AMPS) TJ = 25°C TJ = -40°C VGS = 4.5 V TJ = 150°C
0.275 0.25 0.225 0.2 0.175 0.15 0.125 0.1 0.075 0.05 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 ID, DRAIN CURRENT (AMPS) TJ = -40°C TJ = 25°C VGS = 10 V TJ = 150°C
Figure 3. On-Resistance versus Drain Current and Temperature
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2.5 ID = 1.5 A VGS = 10 V 1000
Figure 4. On-Resistance versus Drain Current and Temperature
VGS = 0 V IDSS, LEAKAGE (nA) 2 TJ = 150°C 100
1.5
TJ = 125°C 10
1
0.5 0 -45 1 -20 5 30 55 80 105 130 155 1 3 5 7 9 11 13 15 17 19 21 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
http://onsemi.com
3
|
|
