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Details, datasheet, quote on part number:NTR4101
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Datasheet text preview:
NTR4101P Trench Power MOSFET
-20 V, Single P-Channel, SOT-23
Features
· · · ·
Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint Pb-Free Package is Available
V(BR)DSS -20 V
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Applications
· Load/Power Management for Portables · Load/Power Management for Computing · Charging Circuits and Battery Protection
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Current (Note 1) Steady State t 10 s Power Dissipation (Note 1) Steady State t 10 s Continuous Drain Current (Note 2) Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current ESD Capability (Note 3) Steady State TA = 25°C TA = 85°C TA = 25°C tp = 10 ms C = 100 pF, RS = 1500 W PD IDM ESD TJ, TSTG IS TL ID TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD Symbol VDSS VGS ID Value -20 ±8.0 -2.4 -1.7 -3.2 0.73 1.25 -1.8 -1.3 0.42 -7.5 225 -55 to 150 -2.4 260 W A V °C A °C A W Unit V V A
RDS(ON) TYP 70 mW @ -4.5 V 90 mW @ -2.5 V 112 mW @ -1.8 V
ID MAX
-3.2 A
P-Channel MOSFET S
G
D
MARKING DIAGRAM & PIN ASSIGNMENT
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3 Drain TR4 W 1 Gate TR4 W = Device Code = Work Week 2 Source
1 2
Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
SOT-23 CASE 318 STYLE 21
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device Package SOT-23 SOT-23 Pb-Free Shipping 3000/Tape & Reel 3000/Tape & Reel
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t < 10 s (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol Rq J A Rq J A Rq J A Max 170 100 300 Unit °C/W
NTR4101PT1 NTR4101PT1G
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface-mounted on FR4 board using the minimum recommended pad size. 3. ESD Rating Information: HBM Class 0
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
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March, 2004 - Rev. 1
Publication Order Number: NTR4101P/D
NTR4101P
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 4) (VGS = 0 V, ID = -250 mA) Zero Gate Voltage Drain Current (Note 4) (VGS = 0 V, VDS = -16 V) Gate-to-Source Leakage Current (VGS = ±8.0 V, VDS = 0 V) ON CHARACTERISTICS Gate Threshold Voltage (Note 4) (VGS = VDS, ID = -250 mA) Drain-to-Source On-Resistance (VGS = -4.5 V, ID = -1.6 A) (VGS = -2.5 V, ID = -1.3 A) (VGS = -1.8 V, ID = -0.9 A) Forward Transconductance (VDS = -5.0 V, ID = -2.3 A) CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Gate Charge Gate-to-Drain "Miller" Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperature. (VGS = 0 V V, dISD/dt = 100 A/ms, IS = -1.6 A) (VGS = 0 V, IS = -2.4 A) VSD trr ta tb Qrr -0.82 12.8 9.9 3.0 1008 -1.2 15 V ns ns ns nC (VGS = -4.5 V, VDS = -10 V, 4.5 10 ID = -1.6 A, RG = 6.0 W) td(on) tr td(off) tf 7.5 12.6 30.2 21.0 ns (VGS = -4.5 V, VDS = -10 V, ID = -1.6 A) (VDS = -10 V, ID = -1.6 A) (VDS = -10 V, ID = -1.6 A) (VGS = 0 V, f = 1 MHz, VDS = -10 V) , , ) Ci s s Co s s Crss QG(tot) QGS QGD RG 675 100 75 7.5 1.2 2.2 6.5 8.5 nC nC nC W pF VGS(th) RD S ( o n ) 70 90 112 gFS 75 85 120 210 S -0.40 -0.720 V mW V(BR)DSS IDSS IGSS -20 -1.0 ±100 V mA nA Symbol Min Typ Max Unit
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NTR4101P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10 VGS = -10 V - -2.4 V -ID, DRAIN CURRENT (AMPS) 8 -2.2 V TJ = 25°C -ID, DRAIN CURRENT (AMPS) 10 VDS 20 V 8 TJ = -55°C 25°C 125°C
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-2.0 V
6
4
.
-1.8 V -1.6 V
4
2 0 0 1 2 3 4 5
2 0
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7
8
0
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
3 1 2 4 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
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Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 1 7 3 5 -ID, DRAIN CURRENT (AMPS) 9 T = -55°C T = 25°C VGS = -5.0 V T = 125°C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.15 0.14 0.13 0.12 0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 1
Figure 2. Transfer Characteristics
TJ = 25°C VGS = -2.5 V
VGS = -4.5 V
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3 5 4 6 8 7 -ID, DRAIN CURRENT (AMPS)
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10
Figure 3. On-Resistance vs. Drain Current and Temperature
100000 1.4 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = -1.6 A -IDSS, LEAKAGE (nA) 10000
Figure 4. On-Resistance vs. Drain Current and Temperature
VGS = 0 V TJ = 150°C
1.2 1.0 0.8 0.6 0.4 -50
1000 TJ = 125°C 100
10 1.0 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 TJ, JUNCTION TEMPERATURE (°C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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