|
Details, datasheet, quote on part number:NTR4501
| |
Datasheet text preview:
NTR4501N Power MOSFET
20 V, 3.2 A, Single N-Channel, SOT-23
Features
· · · ·
Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint Pb-Free Package is Available
http://onsemi.com
V(BR)DSS RDS(on) TYP 70 mW @ 4.5 V 85 mW @ 2.5 V ID MAX (Note 1) 3.6 A 3.1 A
Applications
· Load/Power Switch for Portables · Load/Power Switch for Computing · DC-DC Conversion
MAXIMUM RATINGS (TJ= 25°C unless otherwise stated)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) (Note 1) Steady State Power Dissipation (Note 1) Pulsed Drain Current Steady State TA = 25°C TA = 85°C PD IDM TJ, Tstg IS TL Symbol VDSS VGS ID Value 20 ±12 3.2 2.4 1.25 10.0 -55 to 150 1.6 260 Unit V V A A W
20 V
N-Channel
D
G
S
Steady State tp = 10 ms
3 A °C A °C SOT-23 CASE 318 STYLE 21 1 2
MARKING DIAGRAM/ PIN ASSIGNMENT
3 Drain TR1W
Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1 Gate TR1 W
2 Source
= Specific Device Code = Work Week
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Symbol Rq J A Rq J A Max 100 300 Unit °C/W
ORDERING INFORMATION
Device NTR4501NT1 NTR4501NT3 NTR4501NT1G Package SOT-23 SOT-23 SOT-23 (Pb-Free) SOT-23 (Pb-Free) Shipping 3000 / Tape & Reel 10000 / Tape & Reel 3000 / Tape & Reel
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size.
NTR4501NT3G
10000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
July, 2004 - Rev. 3
Publication Order Number: NTR4501N/D
NTR4501N
Electrical Characteristics (TJ = 25°C unless otherwise specified)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V VDS = 16 V Gate-to-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage (Note 3) Negative Threshold Temperature Coefficient Drain-to-Source On Resistance RD S ( o n ) Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Gate Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SOURCE-DRAIN DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR ta tb QRR VGS = 0 V, dIS/dt = 100 A/ms, 100 A/ms IS = 1.6 A VGS = 0 V, ISD = 1.6 A 0.8 7.1 5 1.9 3.0 nC ns 1.2 V td(on) tr td(off) tf VGS = 4.5 V, VDS = 10 V, ID = 3.6 A, RG = 6.0 W 6.5 12 12 3 ns Ci s s Co s s Crss QG(TOT) QGS QGD VGS = 4.5 V, VDS = 10 V, ID = 3.6 A VGS = 0 V, f = 1.0 MHz, VDS = 10 V 200 80 50 2.4 0.5 0.6 6.0 nC pF gFS VGS(TH) VGS(TH)/TJ VGS = 4.5 V, ID = 3.6 A VGS = 2.5 V, ID = 3.1 A VDS = 5.0 V, ID = 3.6 A VGS = VDS, ID = 250 mA 0.65 -2.3 70 85 9 80 105 1.2 V mV/°C IGSS TJ = 25°C TJ = 85°C VGS = 0 V, ID = 250 mA 20 24.5 22 1.5 10 ±100 V mV/°C mA mA nA Symbol Test Condition Min Typ Max Units
VDS = 0 V, VGS = ±12 V
mW S
3. Pulse Test: Pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTR4501N
7.0 ID, DRAIN CURRENT (AMPS) 6.0 5.0 4.0 . 3.0 2.0 1.0 0 0 1 2 3 4 5 VGS = 1.4 V VGS = 1.2 V 0 6 7 8 9 10 0 1.0 1.5 2.0 2.5 3.0 3.5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VGS = 1.6 V ID, DRAIN CURRENT (AMPS) VGS = 10 V VGS = 2.2 V VGS = 3.0 V VGS = 2.0 V T = 25°C J 7.0 6.0 5.0 4.0 3.0 2.0 TJ = 55°C 1.0 TJ = 25°C TJ = 100°C VDS 10 V
VGS = 1.8 V
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.25
0.10 TJ = 25°C 0.09 VGS = 2.5 V
0.20
0.08 VGS = 4.5 V
0.15
ID = 3.2 A TJ = 25°C
0.07
0.10
0.06
0.05 1.0
2.0
3.0
4.0
5.0
6.0
0.05 0.125
0.25
0.375
0.5
0.625
0.75
0.875 1.0
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance versus Gate-to-Source Voltage
1.4 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1000
Figure 4. On-Resistance versus Drain Current and Gate Voltage
VGS = 0 V 1.2 ID = 3.2 A VGS = 4.5 V
IDSS, LEAKAGE (nA)
100
TJ = 150°C
1.0
10 TJ = 100°C
0.8
0.6 -50
1.0 -25 0 25 50 75 100 125 150 2 6 10 14 18 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
http://onsemi.com
3
|
|
