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Details, datasheet, quote on part number:NTR4503NT3G
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Datasheet text preview:
NTR4503N Power MOSFET
30 V, 2.5 A, Single N-Channel, SOT-23
Features
· · · ·
Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint (3 x 3 mm) Pb-Free Package is Available
V(BR)DSS
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RDS(on) TYP 85 mW @ 10 V 105 mW @ 4.5 V ID MAX 2.5 A
Applications
· DC-DC Conversion · Load/Power Switch for Portables · Load/Power Switch for Computing
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Current (Note 1) Steady State t 10 s Power Dissipation (Note 1) Continuous Drain Current (Note 2) Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current ESD Capability (Note 3) Steady State Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C tp = 10 ms C = 100 pF, RS = 1500 W PD IDM ESD TJ, Tstg IS TL PD ID Symbol VDSS VGS ID Value 30 ±20 2.0 1.5 2.5 0.73 1.5 1.1 0.42 6.0 125 -55 to 150 2.0 260 W W A Unit V V A
30 V
N-Channel
D
G
S
MARKING DIAGRAM/ PIN ASSIGNMENT
3 3 Drain 1 2 TR3W SOT-23 CASE 318 STYLE 21
A V °C A °C
Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
1 Gate TR3 W
2 Source
= Specific Device Code = Work Week
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device NTR4503NT1 NTR4503NT1G Package SOT-23 SOT-23 (Pb-Free) SOT-23 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t < 10 s (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol Rq J A Rq J A Rq J A Max 170 100 300 Unit °C/W NTR4503NT3G
10000/Tape & Reel
1. Surface-mounted on FR4 board using 1 in sq pad size. 2. Surface-mounted on FR4 board using the minimum recommended pad size. 3. ESD Rating Information: HBM Class 0.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
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July, 2004 - Rev. 2
Publication Order Number: NTR4503N/D
NTR4503N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current V(BR)DSS IDSS VGS = 0 V, ID = 250 mA VGS = 0 V, VDS = 24 V VGS = 0 V, VDS = 24 V, TJ = 125°C Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Drain-to-Source On-Resistance VGS(TH) RD S ( o n ) VGS = VDS, ID = 250 mA VGS = 10 V, ID = 2.5 A VGS = 4.5 V, ID = 2.0 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Ci s s Co s s Crss Ci s s Co s s Crss QG(TOT) QG(TH) QGS QGD QG(TOT) QG(TH) QGS QGD VGS = 4.5 V, VDS = 24 V, ID = 2.5 A VGS = 10 V, VDS = 15 V, ID = 2.5 A VGS = 0 V, f = 1.0 MHz, VDS = 24 V VGS = 0 V, f = 1.0 MHz, VDS = 15 V 135 52 15 130 42 13 3.6 0.3 0.6 0.7 1.9 0.3 0.6 0.9 nC 250 75 25 7.0 nC pF pF gFS VDS = 4.5 V, ID = 2.5 A 1.0 1.75 85 105 5.3 3.0 110 140 S V mW IGSS VDS = 0 V, VGS = "20 V 30 36 1.0 10 "100 nA V mA Symbol Test Conditions Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf td(on) tr td(off) tf VGS = 10 V, VDD = 24 V, ID = 2.5 A, RG = 2.5 W VGS = 10 V, VDD = 15 V, ID = 1 A, RG = 6 W 5.8 5.8 14 1.6 4.8 6.7 13.6 1.8 12 10 25 5.0 ns ns
DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Reverse Recovery Charge VSD tRR QRR VGS = 0 V, IS = 2.0 A VGS = 0 V, IS = 2.0 A, dIS/dt = 100 A/ms 0.85 9.2 4.0 1.2 V ns nC
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures.
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NTR4503N
TYPICAL PERFORMANCE CURVES
10 ID, DRAIN CURRENT (AMPS) 10 V 6V 5V 4.5 V 4.2 V 4V TJ = 25°C 3.6 V 3.4 V 3.2 V 3V 2 0 0 1 2 3 4 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2.8 V 2.6 V 0 2 VDS 10 V ID, DRAIN CURRENT (AMPS) 8
3.8 V
8
6
4
4 25°C
100°C
TJ = -55°C 3 4 5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 6
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.3 0.25 0.2 0.15 0.1 0.05 0 2 3 4 6 5 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10 ID = 2.5 A TJ = 25°C 0.12
Figure 2. Transfer Characteristics
TJ = 25°C 0.11 VGS = 4.5 V 0.10
0.09
0.08 VGS = 10 V 0.07 2 3 4 5 6 ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
1.8 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.4 1.2 1.0 0.8 0.6 -50 1 -25 0 25 50 75 100 125 150 ID = 2.5 A VGS = 10 V IDSS, LEAKAGE (nA) 100 1000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V TJ = 150°C
10 TJ = 100°C
5
10
15
20
25
30
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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