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Details, datasheet, quote on part number:NTS4001NT1
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Datasheet text preview:
NTS4001N Small Signal MOSFET
30 V, 270 mA, Dual N-Channel, SC-70
Features
· · · · · · · ·
Low Gate Charge for Fast Switching Small Footprint - 30% Smaller than TSOP-6 ESD Protected Gate Pb-Free Package for Green Manufacturing (G Suffix)
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V(BR)DSS 30 V 1.5 W @ 2.5 V RDS(on) TYP 1.0 W @ 4.0 V 270 mA ID Max
Applications
Low Side Load Switch Li-Ion Battery Supplied Devices - Cell Phones, PDAs, DSC Buck Converters Level Shifts
SOT-323 SC-70 (3 LEADS)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State Steady State TA = 25 °C TA = 85 °C TA = 25 °C t =10 µs PD IDM TJ, TSTG IS TL Symbol VDSS VGS ID Value 30 ±20 270 200 330 200 -55 to 150 270 260 mW Units V V mA
Gate
1
3
Drain
Source
2
Top View mA
Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) 1.
°C
mA °C
1 2
3
MARKING DIAGRAM
TDW
Surface mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).
SC-70 / SOT-323 CASE 419 STYLE 8
TD W
= Device Code = Work Week
PIN ASSIGNMENT
Gate 1 3 Source 2 Top View Drain
ORDERING INFORMATION
Device NTS4001NT1 NTS4001NT1G Package SC-70 SC-70 (Pb-Free) Shipping 3000 Units/Reel 3000 Units/Reel
© Semiconductor Components Industries, LLC, 2003
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August, 2003 - Rev. 0
Publication Order Number: NTS4001N/D
NTS4001N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = 30 V VDS = 0 V, VGS = ±10 V VGS = 0 V, ID = 100 µA 30 60 1.0 ±1.0 V mV/ °C µA µA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH) VGS(TH)/TJ RD S ( o n ) VGS = 4.0 V, ID = 10 mA VGS = 2.5 V, ID = 10 mA Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 4.5 V, VDD = 5.0 V, ID = 10 mA RG = 50 10 mA, 50 17 23 94 82 ns CI S S COSS CR S S QG(TOT) QG(TH) QGS QGD VGS = 5.0 V, VDS = 24 V, ID = 0 1 A 0.1 VGS = 0 V, f = 1.0 MHz, VDS = 5 0 V 5.0 20 19 7.25 0.9 0.2 0.3 0.2 33 32 12 1.3 nC pF gFS VDS = 3.0 V, ID = 10 mA VGS = VDS, ID = 100 µA 0.8 1.2 -3.4 1.0 1.5 80 1.5 2.0 mS 1.5 V mV/ °C
DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 10 mA 10 mA TJ = 25°C TJ = 125°C 0.65 0.43 5.0 ns 0.7 V
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 8.0 A/µs, IS = 10 mA
2. Pulse Test: pulse width 300 µs, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.
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NTS4001N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
0.2 ID, DRAIN CURRENT (AMPS) 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 0.4 0.8 1.2 1.6 1.75 V 1.5 V 2 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2V VGS = 10 V to 3 V VGS = 2.75 V 2.5 V 2.25 V TJ = 25°C ID, DRAIN CURRENT (AMPS) 0.1 VDS = 5 V 0.08
0.06 TJ = 125°C 0.04 25°C 0.02 TJ = -55°C 0 1 1.2 1.4 1.6 2 1.8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2.2
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1.25 VGS = 10 V 1.0 TJ = 125°C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1.25
Figure 2. Transfer Characteristics
TJ = 25°C 1.0 VGS = 4.5 V 0.75 VGS = 10 V 0.5
0.75 TJ = 25°C 0.5
TJ = -55°C
0.25 0.005
0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS)
0.205
0.25 0.005
0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS)
0.205
Figure 3. On-Resistance vs. Drain Current and Temperature
2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 10 -25 0 25 50 75 100 125 150 IDSS, LEAKAGE (nA) 1000 ID = 0.01 A VGS = 10 V 10000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V
TJ = 150°C 100 TJ = 125°C 10 20
0
5
15
25
30
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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