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Details, datasheet, quote on part number:NUD3048
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| Part: | NUD3048 |
| Category: | Power Management => Power Distribution/Switches => MOSFET Drivers |
| Description: | Fet Switch For Inrush Limiting, Power Good, And Level Shifting <<<>>>The NUD3048 Provides a Single Device Solution For a Number Of<<<>>>applications Requiring a Low Power, High Voltage, Fet Switch. The<<<>>>package Includes a Gate Resistor And Gate to Source Zener Clamp. This<<<>>>switch CAN Accommodate a Wide Range of Input Voltages, Making It<<<>>>compatible With MOSt Current Logic Levels. Its 100 V Rating Makes It<<<>>>compatible With 48 V Telecom Applications. |
| Company: | ON Semiconductor |
| Datasheet: | Download NUD3048 datasheet File size : 37 kB |
| Request For quote: | Find where to buy NUD3048
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Datasheet text preview:
NUD3048 FET Switch
100 V, 800 mW, N-Channel, TSOP-6
The NUD3048 provides a single device solution for a number of applications requiring a low power, high voltage, FET switch. The package includes a gate resistor and gate to source zener clamp. This switch can accommodate a wide range of input voltages, making it compatible with most current logic levels. Its 100 V rating makes it compatible with 48 V telecom applications.
Features
http://onsemi.com MARKING DIAGRAM
6 6 1 TSOP-6 CASE 318G STYLE 9 JW7 D 1
· · · · · · · · ·
100 V Rating On Gate 2 Integrated 100 K Rg Option Integrated ESD Diode Protection Low Threshold Voltage
JW7 = Specific Device Code D = Date Code
Typical Applications
FET Switch Inverter Level Shifter Inrush Limiter Relay Driver
Drain 2, 4, 5
ORDERING INFORMATION
Device NUD3048MT1 Package TSOP-6 Shipping 3000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
6 Gate 2
100 kW
1 Gate 1
3 Source
Figure 1. Block Diagram
© Semiconductor Components Industries, LLC, 2004
1
March, 2004 - Rev. 1
Publication Order Number: NUD3048/D
NUD3048
MAXIMUM RATINGS
Symbol VDSS VG1SS ID VG2SS TJmax RqJA ESD Rating Drain to Source Voltage Continuous Gate to Source Voltage Continuous @ 1.0 mA Drain Current Continuous Gate Resistor to Source Voltage Continuous Maximum Junction Temperature Thermal Impedance (Junction to Ambient) (Note 1) Thermal Impedance (Junction to Ambient) (Note 2) Human Body Model (HBM) Class 2 Machine Model Class A According to EIA/JESD22/A114 Specification Value 100 15 500 100 150 190 80 2000 100 Unit V V mA V °C °C/W V V
ELECTRICAL CHARACTERISTICS (TJ =25_C unless otherwise noted.)
Characteristic OFF CHARACTERISTICS Drain to Source Leakage Current (VDS = 80 V, VGS = 0 V) Gate Body Leakage Current (VGS =10 V, VDS = 0 V) (VGS = 10 V, VDS = 0 V, TJ = 125°C) ON CHARACTERISTICS Gate Threshold Voltage (ID = 1.0 mA) Drain to Source Resistance (VGS = 4.5 V, ID = 100 mA) Drain to Source Resistance (VGS = 10 V, ID = 100 mA) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz) Output Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz) Transfer Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz) GATE BIAS CHARACTERISTICS Gate Resistor Gate Zener Breakdown Voltage (IZ = 1.0 mA) (Note 3) Gate Zener Breakdown Voltage (IZ = 3.0 mA) (Note 4) 1. 2. 3. 4. Min pad, 1 oz. Cu. 1 inch pad, 1 oz Cu. Measured from gate 1 to source. Measured from gate 2 to source. RG VZ 75 15 100 100 17 115 125 - - kW V Ciss Coss Crss - - - 135 75 26 - - - pF pF pF VGS RDS(on) RDS(on) 1.3 - - 1.7 0.65 0.6 2.0 0.82 0.72 V W W IDSS IGSS IGSS - - - 20 3.0 6.0 100 10 20 mA mA Symbol Min Typ Max Unit
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NUD3048
0.5 VGS = 2.0 V 0.4 VGS = 5.0 V VGS = 3.0 V RDS(on) (W) 0.65 VGS = 4.5 V 0.70
VDS(on) (V)
0.3
0.2
VGS = 7.0 V VGS = 10 V
0.60
0.1
VGS = 10 V 0 0 0.1 0.2 IDS (A) 0.3 0.4 0.5 0.55 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID (A)
Figure 2. VDS(on) Variation with IDS and Gate Voltage
Figure 3. On Resistance Variation with Drain Current and Gate Voltage
1.4 1.2 1 RDS(on) VGS = 4.5 V 0.8 0.6 0.4 0.2 0 -50 VGS = 10 V IGS (mA)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 50 100 150 0.0 -10 -8 -6 -4 -2 0 VGS (V) 2 4 6 8 10
RDS(on) VARIATION WITH TEMPERATURE
Figure 4. Variation of RDS(on) with Temperature and Gate Voltage at ID = 100 mA
Figure 5. Gate Leakage Current Variation with Gate Voltage
7.40E-05 LEAKAGE CURRENT IDSS 7.20E-05 7.00E-05 6.80E-05 6.60E-05 6.40E-05 6.20E-05 6.00E-05 -40.0 -20.0 IDSS
0.0
20.0
40.0
60.0
80.0 100.0 120.0
JUNCTION TEMPERATURE
Figure 6. Variation of Leakage Current IDSS (A) with VGS = 0 V and VDS = 100 V http://onsemi.com
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