|
Details, datasheet, quote on part number:NUD3124LT1
| |
Datasheet text preview:
NUD3124 Automotive Inductive Load Driver
This MicroIntegrationt part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a free-wheeling diode. It accepts logic level inputs, thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers.
Features http://onsemi.com
· Provides Robust Interface between D.C. Relay Coils and Sensitive · · · ·
Logic Capable of Driving Relay Coils Rated up to 150 mA at 12 Volts Replaces 3 or 4 Discrete Components for Lower Cost Internal Zener Eliminates Need for Free-Wheeling Diode Meets Load Dump and other Automotive Specs
3 1 2 SOT-23 CASE 318 STYLE 21
MARKING DIAGRAMS
JW6 D
Typical Applications
JW6 = Specific Device Code D = Date Code
· Automotive and Industrial Environment · Drives Window, Latch, Door, and Antenna Relays
6 JW6 D 1 SC-74 CASE 318F STYLE 7 JW6 = Specific Device Code D = Date Code
Benefits
· · · ·
Reduced PCB Space Standardized Driver for Wide Range of Relays Simplifies Circuit Design and PCB Layout Compliance with Automotive Specifications
INTERNAL CIRCUIT DIAGRAMS Drain (3) Drain (6)
Drain (3)
Gate (1)
10 k 100 K
Gate (2)
10 k 100 K
10 k 100 K
Gate (5)
Source (2) CASE 318
Source (1)
Source (4) CASE 318F
ORDERING INFORMATION Device NUD3124LT1 NUD3124DMT1 Package SOT-23 SC-74 Shipping 3000/Tape & Reel 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2003
1
August, 2003 - Rev. 5
Publication Order Number: NUD3124/D
NUD3124
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Symbol VDSS VGSS ID EZ Drain-to-Source Voltage Continuous (TJ = 125°C) Gate-to-Source Voltage Continuous (TJ = 125°C) Drain Current Continuous (TJ = 125°C) Single Pulse Drain-to-Source Avalanche Energy (For Relay's Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) Peak Power Dissipation, Drain-to-Source (Notes 1 and 2) (TJ Initial = 85°C) Load Dump Suppressed Pulse, Drain-to-Source (Notes 3 and 4) (Suppressed Waveform: Vs = 45 V, RSOURCE = 0.5 W, T = 200 ms) (For Relay's Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) Inductive Switching Transient 1, Drain-to-Source (Waveform: RSOURCE = 10 W, T = 2.0 ms) (For Relay's Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) Inductive Switching Transient 2, Drain-to-Source (Waveform: RSOURCE = 4.0 W, T = 50 ms) (For Relay's Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) Reverse Battery, 10 Minutes (Drain-to-Source) (For Relay's Coils/Inductive Loads of 80 W or more) Dual Voltage Jump Start, 10 Minutes (Drain-to-Source) Human Body Model (HBM) According to EIA/JESD22/A114 Specification Rating Value 28 12 150 250 Unit V V mA mJ
PPK ELD1
20 80
W V
ELD2
100
V
ELD3
300
V
Rev-Bat Dual-Volt ESD
-14 28 2,000
V V V
1. 2. 3. 4.
Nonrepetitive current square pulse 1.0 ms duration. For different square pulse durations, see Figure 2. Nonrepetitive load dump suppressed pulse per Figure 3. For relay's coils/inductive loads higher than 80 W, see Figure 4.
THERMAL CHARACTERISTICS
Symbol TA TJ TSTG PD PD Rq J A Operating Ambient Temperature Maximum Junction Temperature Storage Temperature Range Total Power Dissipation (Note 5) Derating above 25°C Total Power Dissipation (Note 5) Derating above 25°C Thermal Resistance JunctiontoAmbient (Note 5) SOT-23 SC-74 SOT-23 SC-74 Rating Value -40 to 125 150 -65 to 150 225 1.8 380 1.5 556 329 Unit °C °C °C mW mW/°C mW mW/°C °C/W
5. Mounted onto minimum pad board.
http://onsemi.com
2
NUD3124
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic OFF CHARACTERISTICS Drain to Source Sustaining Voltage (ID = 10 mA) Drain to Source Leakage Current (VDS = 12 V, VGS = 0 V) (VDS = 12 V, VGS = 0 V, TJ = 125°C) (VDS = 28 V, VGS = 0 V) (VDS = 28 V, VGS = 0 V, TJ = 125°C) Gate Body Leakage Current (VGS = 3.0 V, VDS = 0 V) (VGS = 3.0 V, VDS = 0 V, TJ = 125°C) (VGS = 5.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V, TJ = 125°C) ON CHARACTERISTICS Gate Threshold Voltage (VGS = VDS, ID = 1.0 mA) (VGS = VDS, ID = 1.0 mA, TJ = 125°C) Drain to Source On-Resistance (ID = 150 mA, VGS = 3.0 V) (ID = 150 mA, VGS = 3.0 V, TJ = 125°C) (ID = 150 mA, VGS = 5.0 V) (ID = 150 mA, VGS = 5.0 V, TJ = 125°C) Output Continuous Current (VDS = 0.25 V, VGS = 3.0 V) (VDS = 0.25 V, VGS = 3.0 V, TJ = 125°C) Forward Transconductance (VDS = 12 V, ID = 150 mA) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Output Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Transfer Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) SWITCHING CHARACTERISTICS Propagation Delay Times: High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V) Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V) High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V) Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V) Transition Times: Fall Time; Figure 1, (VDS = 12 V, VGS = 3.0 V) Rise Time; Figure 1, (VDS = 12 V, VGS = 3.0 V) Fall Time; Figure 1, (VDS = 12 V, VGS = 5.0 V) Rise Time; Figure 1, (VDS = 12 V, VGS = 5.0 V) ns tPHL tPLH tPHL tPLH - - - - 890 912 324 1280 - - - - ns tf tr tf tr - - - - 2086 708 556 725 - - - - Ciss Coss Crss - - - 32 21 8.0 - - - pf pf pf VGS(th) 1.3 1.3 RD S ( o n ) - - - - IDS(on) 150 140 gFS - 200 - 500 - - - mmho - - - - 1.4 1.7 0.8 1.1 mA 1.8 - 2.0 2.0 W V VBRDSS IDSS - - - - IGSS - - - - - - - - 60 80 90 110 - - - - 0.5 1.0 50 80 mA 28 34 38 V mA Symbol Min Typ Max Unit
http://onsemi.com
3
|
|
