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Details, datasheet, quote on part number:NUF2101
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Datasheet text preview:
NUF2101MT1 USB Filter with ESD Protection
T h i s device is designed for applications requiring Line Termination, EMI Filtering and ESD Protection. It is intended for use in downstream USB 1.1 ports, Cellular phones, Wireless equipment and computer applications. This device offers an integrated solution in a small package (TSOP-6, Case 318G) reducing PCB space and cost.
Features: http://onsemi.com
SCHEMATIC
D+OUT 1 15 k VBUS 2 15 k D-OUT 3 D-IN 4 5 RS D+IN 6
· Provides USB Line Termination, Filtering and ESD Protection · Single IC Offers Cost Savings by Replacing 4 Resistors,
2 Capacitors, and 5 TVs diodes · EMI Filtering Prevents Noise from Entering/Leaving the System · IEC61000-4-2 ESD Protection for USB Port · ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B
Benefits:
· TSOP-6 Package Minimizes PCB Space · Integrated Circuit Increases System Reliability versus Discrete
Component Implementation · TVs Devices Provide ESD Protection That is Better than a Discrete Implementation because the Small IC minimizes Parasitic Inductances
Typical Applications:
6
5
4 3
1
2
· USB Hubs · Computer Motherboards
MAXIMUM RATINGS (TA = 25°C)
Rating Steady State Power Maximum Junction Temperature Operating Temperature Range Storage Temperature Range Lead Solder Temperature (10 second duration) Symbol PD TJ(max) TJ Tstg TL Value 225 125 -55 to +125 -55 to +125 260 Unit mW °C °C °C °C 6V D
TSOP-6 CASE 318G STYLE 10
MARKING DIAGRAM
6 5 4
6V D
1
2
3
= Specific Device Code = Date Code
ORDERING INFORMATION
Device NUF2101MT1 Package TSOP-6 Shipping 3000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
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March, 2004 - Rev. 1
Publication Order Number: NUF2101MT1/D
NUF2101MT1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
VBR @ 1 mA (Volts) Device NUF2101MT1 Device Marking 6V VRWM (Volts) 5.25 Min 6.0 Max 8.0 Max IR @ VRWM = 5.25 V VBUS to GND (mA) 1.0 Max IR @ VRWM = 3.3 V VBUS Pin (mA) 0.1 Pull-down Resistor Rpd (kW) Min 13 Nom 15 Max 17
Typical Line Capacitance (pF) (Notes 2, 3) 55
Series Resistor RS (W) (Note 1) Min 26.3 Nom 30 Max 33.7
1. For other RS values (i.e. RS = 30 W) contact your local ON Semiconductor sales representative. 2. Measured at 25°C, VR = 0 V, f = 1 MHz, Pins 2, 3, 4 or 5 to GND with Pin 1 also grounded. 3. For other capacitance values contact your local ON Semiconductor sales representative.
http://onsemi.com
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NUF2101MT1
TYPICAL CHARACTERISTICS
0 -5 -10 S21 (dB) -15 -20 -25 -30 -35 1 10 100 1000 FREQUENCY (MHz) 10000 S41 (dB) 0 -10 -20 -30 -40 -50 -60 10
100
1000 FREQUENCY (MHz)
10000
Figure 1. Insertion Loss Characteristics
Figure 2. Analog Cross-Talk
33 32 31 RS 30 29 28 27 -35 Rp d -15 25 5 45 TEMPERATURE (°C) 65
16500 16000 15500 15000 14500 14000 13500 -35
85
-15
25 5 45 TEMPERATURE (°C)
65
85
Figure 3. RS vs. Temperature
Figure 4. Rpd vs. Temperature
58 56 CAPACITANCE (pF) 54 52 50 48 46 44 42 40 0 1 2 3 Vr, REVERSE VOLTAGE (V) 4
Figure 5. Typical Capacitance
http://onsemi.com
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