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Details, datasheet, quote on part number:NUF2102UT1
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Datasheet text preview:
NUF2102UT1 Product Preview USB Filter with ESD Protection
T h i s device is designed for applications requiring Line Termination, EMI Filtering and ESD Protection. It is intended for use in upstream USB ports, Cellular phones, Wireless equipment and computer applications. This device offers an integrated solution in a small package reducing PCB space and cost.
Features: http://onsemi.com CIRCUIT DESCRIPTION
D(IN) D4 Rpu A4 VBUS C Rs1 B4 D(IN) A1 D(OUT) Rs2 D(OUT) D1
· Provides USB Line Termination, Filtering and ESD Protection · Single IC Offers Cost Savings by Replacing 3 Resistors, · · · ·
2 Capacitors, and 5 TVs diodes Bidirectional EMI Filtering Prevents Noise from Entering/Leaving the System IEC6100042 ESD Protection for USB Port Flexible Pulldown or Pullup Line Termination to Meet USB 1.1 Low Speed and High Speed Specification ESD Ratings: Machine Model = C Human Body Model = 3B
C A2D2 GND A3D3
Benefits:
· MicroLeadless Package Minimizes PCB Space · Integrated Circuit Increases System Reliability versus Discrete
Component Implementation · TVS Devices Provide ESD Protection That is Better than a Discrete Implementation because the Small IC minimizes Parasitic Inductances
Typical Applications:
MicroLeadlesst 2020 CASE TBD PLASTIC
· USB Hubs · Computer Peripherals Using USB
MAXIMUM RATINGS (TA = 25°C)
Rating Steady State Power Maximum Junction Temperature Operating Temperature Range Storage Temperature Range Lead Solder Temperature (10 second duration) Symbol PD TJ(max) TJ Tstg TL Value 225 125 55 to +125 55 to +125 260 Unit mW °C °C °C °C
MARKING DIAGRAM
432
1 A B C D
TBD D
(Top Side)
(Pad Side)
TBD = Specific Device Code D = Date Code
ORDERING INFORMATION
Device NUF2102UT1 Package MicroLeadless 2020 Shipping 3000/Tape & Reel
This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2002
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May, 2002 Rev. 0
Publication Order Number: NUF2102UT1/D
NUF2102UT1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
VBR @ 1 mA (Volts) Device NUF2102UT1 Device Marking TBD VRWM (Volts) 5.25 Min 6.0 Max 8.0 Max IR @ VRWM = 5.25 V VBUS to GND (mA) 5.0 Max IR @ VRWM = 3.3 V I/O Pin (mA) 1.0
Typical Line Capacitance (pF) 68
Series Resistor RS (W) Min 20 Nom 22 Max 24
Pullup Resistor Rup (kW) Min 1.35 Nom 1.5 Max 1.65
1. For other capacitance values contact your local ON Semiconductor sales representative. 2. Measured at 25°C, VR = 0 V, f = 1 MHz, Pin D4, B4, D1, or A1 to GND with pin A4 also grounded.
http://onsemi.com
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NUF2102UT1
OUTLINE DIMENSIONS
2020 MicroLeadlessE PGA PLASTIC PACKAGE PRELIMINARY CASE ISSUE O
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. DIM A B C D E F MILLIMETERS TYP MAX 2.0 --2.0 --0.7 --0.25 --0.50 --0.25 ---
TOP VIEW
A F D E BOTTOM VIEW
C
B
http://onsemi.com
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