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Details, datasheet, quote on part number:PZ3906
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Datasheet text preview:
PZT3906T1
Preferred Device
General Purpose Transistor
PNP Silicon
MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value -40 -40 -5.0 -200 Unit Vdc Vdc Vdc mAdc 1 BASE 3 EMITTER COLLECTOR 2, 4
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THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation (Note 1) TA = 25°C Thermal Resistance Junction-to-Ambient (Note 1) Thermal Resistance Junction-to-Lead #4 Junction and Storage Temperature Range Symbol PD Rq J A Rq J A TJ, Tstg Max 1.5 12 83.3 35 - 55 to +150 Unit W mW/°C °C/W °C/W °C AWW 2A
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR- 4 with 1 oz and 713 mm2 of copper area.
SOT-223 CASE 318E Style 1
2A = Specific Device Code A = Assembly Location WW = Work Week
ORDERING INFORMATION
Device PZT3906T1 Package SOT-223 Shipping 1000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2004
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May, 2004 - Rev. 1
Publication Order Number: PZT3906T1/D
PZT3906T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS (Note 2) Collector - Emitter Breakdown Voltage (Note 2) (IC = -1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -10 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = -10 mAdc, IC = 0) Base Cutoff Current (VCE = -30 Vdc, VEB = -3.0 Vdc) Collector Cutoff Current (VCE = -30 Vdc, VEB = -3.0 Vdc) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) Collector - Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Base - Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) SMALL- SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) Output Capacitance (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Small - Signal Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Output Admittance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Noise Figure (IC = -100 mAdc, VCE = -5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 2. Pulse Width 300 ms, Duty Cycle 2.0%. (VCC = -3.0 Vdc, VBE = 0.5 Vdc, IC = -10 mAdc, IB1 = -1.0 mAdc) (VCC = -3.0 Vdc, IC = -10 mAdc, IB1 = IB2 = -1.0 mAdc) td tr ts tf - - - - 35 35 225 75 ns fT 250 Co b o - Ci b o - hie 2.0 hre 0.1 hfe 100 hoe 3.0 NF - 4.0 60 dB 400 mmhos 10 - 12 X 10- 4 10 kW 4.5 - pF MHz HFE 60 80 100 60 30 VCE(sat) - - VBE(sat) -0.65 - -0.85 -0.95 -0.25 -0.4 - - 300 - - Vdc - V(BR)CEO -40 V(BR)CBO -40 V(BR)EBO -5.0 IBL - ICEX - -50 -50 - nAdc - - Vdc Symbol Min Max Unit
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PZT3906T1
3V +9.1 V 275 < 1 ns +0.5 V 10 k 0 CS < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors t1 10.9 V 1N916 CS < 4 pF* 10 k < 1 ns 275 3V
Figure 1. Delay and Rise Time Equivalent Test Circuit
Figure 2. Storage and Fall Time Equivalent Test Circuit
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