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Part: 2B940A
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
-> General Purpose
-> PNP
Description: Silicon PNP Epitaxial Planar Type ( For Power Amplification )
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2B940A datasheet File size : 52 kB
Request For quote: Find where to buy 2B940A
Datasheet text preview:
Power Transistors
2SB940, 2B940A
Silicon PNP epitaxial planar type
For power amplification For TV vertical deflection output Complementar y to 2SD1264 and 2SD1264A
Unit: mm
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1
02 0.5 +0..1
4.2±0.2
q q
16.7±0.3 14.0±0.5
q
High collector to emitter voltage VCEO Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw
s
Absolute Maximum Ratings (TC=25°C)
Parameter Symbol V CBO V CEO V EBO ICP IC PC Tj T stg Ratings 200 200 150 180 6 3 2 30 2 150 55 to +150 Unit V 2SB940 2SB940A 2SB940
Collector to base voltage Collector to
Solder Dip
4.0
7.5±0.2
s Features
2.54±0.25 5.08±0.5
emitter voltage 2SB940A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W °C °C
1
2
3
1:Base 2:Collector 3:Emitter TO220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SB940 2SB940A
(TC=25°C)
Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VBE VCE(sat) fT
*
Conditions VCB = 200V, IE = 0 VEB = 4V, IC = 0 IC = 50µA, IE = 0 IC = 5mA, IB = 0 IE = 500µA, IC = 0 VCE = 10V, IC = 150mA VCE = 10V, IC = 400mA VCE = 10V, IC = 400mA IC = 500mA, IB = 50mA VCE = 10V, IC = 0.5A, f = 10MHz
min
typ
max 50 50
Unit µA µA V V V
200 150 180 6 60 50 1 1 30 240
Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency
*h FE1
V V MHz
Rank classification
Q 60 to 140 P 100 to 240
Rank h FE1
1
Power Transistors
PC -- Ta
50 600 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25°C 500 IB=4.5mA 4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0 0
2SB940, 2SB940A
IC -- VCE
2.0 VCE=10V
IC -- VBE
Collector power dissipation PC (W)
Collector current IC (A)
Collector current IC (A)
40
1.6 25°C 1.2 TC = 1 0 0 ° C
400
30
300
(1) 20
0.8 25°C
200
10 (3) (4) 0
(2)
100
0.4
0.2
0.4
0.6
0.8
1.0
Ambient temperature Ta (°C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
10000 10 IC/IB=10
hFE -- IC
10000 VCE=10V 3000 1000 300 100 30 10 3
fT -- IC
VCE=10V f=10MHz TC=25°C
Forward current transfer ratio hFE
3
1000 300 100 25°C 30 10 3 1 0.01 0.03 0.1 0.3 TC=100°C 25°C
1 TC=100°C 25°C 25°C
0.3
0.1
0.03
0.01 0.01 0.03
Transition frequency fT (MHz)
1 3 10
3000
0.1
0.3
1
3
1 0.01 0.03 0.1 0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Area of safe operation (ASO)
100 30 103 Non repetitive pulse TC=25°C
R th(t) -- t
(1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1)
Thermal resistance Rth(t) (°C/W)
Collector current IC (A)
102
10 3 1 ICP t=0.5ms IC 5ms 1ms
10
(2)
0.3 DC 0.1 0.03 0.01 1
1
2SB940A
101
2SB940
3
10
30
100 300 1000
102 104
103
102
101
1
10
102
103
104
Collector to emitter voltage VCE
(V)
Time t (s)
2
Others parts begin by 2b
2B-1
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