Details, datasheet, quote on part number: 2SA06842SA684
Part2SA06842SA684
CategoryDiscrete => Transistors => Bipolar => General Purpose
DescriptionV<SUB>CEO</SUB>(V) = -25 ;; I<SUB>C</SUB>(A) = -1 ;; HFE(min) = 85 ;; HFE(max) = 340 ;; Package = TO-92L-A1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload 2SA06842SA684 datasheet
  

 

Features, Applications

Features
Complementary pair with 2SC1383 and 2SC1384 Allowing supply with the radial taping

Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating C V

For low-frequency power amplification and driver amplification Complementary 2SC1383, 2SC1384

Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SA0683 2SA6084 VEBO ICBO *2 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob = -10 A, = 0 VCB = 0 VCE -500 mA VCE = -500 mA, = -500 mA, -50 mA VCB = 50 mA, = 200 MHz VCB = 1 MHz V MHz pF VCEO = -2 mA, = 0 Symbol VCBO Conditions = -10 A, = 0 Min A V Typ Max Unit V

Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE to 340 Note) The part numbers in the parenthesis show conventional part number.



Collector output capacitance C (pF) (Common base, input open circuited) ob


 

Related products with the same datasheet
2SA06832SA683
2SA0684
2SA683
2SA684
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
2SA0719 VCEO(V) = -25 ;; IC(A) = -0.5 ;; HFE(min) = 85 ;; HFE(max) = 340 ;; Package = TO-92-A1TO-92-B1
2SA0720A VCEO(V) = -70 ;; IC(A) = -0.5 ;; HFE(min) = 85 ;; HFE(max) = 240 ;; Package = TO-92-A1TO-92-B1
2SA0777 VCEO(V) = -80 ;; IC(A) = -0.5 ;; HFE(min) = 90 ;; HFE(max) = 220 ;; Package = TO-92L-A1
2SA0794 VCEO(V) = -100 ;; IC(A) = -0.5 ;; HFE(min) = 90 ;; HFE(max) = 220 ;; Package = TO-126B-A1
2SA0838 VCEO(V) = -20 ;; IC(A) = -0.03 ;; HFE(min) = 70 ;; HFE(max) = 220 ;; Package = TO-92-A1TO-92-B1
2SA0879 VCEO(V) = -200 ;; IC(A) = -0.7 ;; HFE(min) = 60 ;; HFE(max) = 220 ;; Package = TO-92L-A1
2SA0885 VCEO(V) = -35 ;; IC(A) = -1 ;; HFE(min) = 85 ;; HFE(max) = 340 ;; Package = TO-126B-A1
2SA0886 VCEO(V) = -40 ;; IC(A) = -1.5 ;; HFE(min) = 80 ;; HFE(max) = 220 ;; Package = TO-126B-A1
2SA0900 VCEO(V) = -18 ;; IC(A) = -1 ;; HFE(min) = 130 ;; HFE(max) = 280 ;; Package = TO-126B-A1
2SA0914 VCEO(V) = -150 ;; IC(A) = -50 ;; HFE(min) = 130 ;; HFE(max) = 330 ;; Package = TO-126B-A1
2SA0921 VCEO(V) = -120 ;; IC(A) = -0.02 ;; HFE(min) = 180 ;; HFE(max) = 700 ;; Package = TO-92-A1TO-92-B1
2SA0963 VCEO(V) = -40 ;; IC(A) = -1.5 ;; HFE(min) = 80 ;; HFE(max) = 220 ;; Package = TO-126B-A1
2SA1018 VCEO(V) = -200 ;; IC(A) = -0.07 ;; HFE(min) = 60 ;; HFE(max) = 220 ;; Package = TO-92-A1TO-92-B1
2SA1022 VCEO(V) = -20 ;; IC(A) = -0.03 ;; HFE(min) = 70 ;; HFE(max) = 220 ;; Package = Mini3-G1
2SA1034 VCEO(V) = -35 ;; IC(A) = -0.05 ;; HFE(min) = 180 ;; HFE(max) = 700 ;; Package = Mini3-G1
2SA1096 VCEO(V) = -50 ;; IC(A) = -2 ;; HFE(min) = 80 ;; HFE(max) = 220 ;; Package = TO-126B-A1
2SA1123 VCEO(V) = -150 ;; IC(A) = -0.05 ;; HFE(min) = 130 ;; HFE(max) = 450 ;; Package = TO-92-A1TO-92-B1
2SA1124
2SA1127 VCEO(V) = -55 ;; IC(A) = -0.1 ;; HFE(min) = 180 ;; HFE(max) = 700 ;; Package = TO-92-A1TO-92-B1
2SA1128 VCEO(V) = -20 ;; IC(A) = -0.5 ;; HFE(min) = 90 ;; HFE(max) = 220 ;; Package = TO-92-A1TO-92-B1
2SA1254 VCEO(V) = -20 ;; IC(A) = -0.03 ;; HFE(min) = 70 ;; HFE(max) = 220 ;; Package = M-A1

MA751A : Shottky Barrier Diodes(SBD) VR(V) = 40 ;; IF(A) = 20 ;; VFmax.(V) = 0.55 ;; Trrtyp.(ns) = 30 ;; IR(mA) = 5 ;; Package = TOP-3F-A1TOP-3F-B1

2SD2693A : Power Transistors Silicon NPN Triple Diffusion Planar type

ECQ-U2A682MV : 6800pF Film Capacitor Radial; CAP FILM 6800PF 250VAC RADIAL Specifications: Capacitance: 6800pF ; Tolerance: 20% ; Dielectric Material: Polyester, Metallized ; Package / Case: Radial ; Packaging: Bulk ; Lead Spacing: 0.591" (15.00mm) ; ESR (Equivalent Series Resistance): - ; Mounting Type: Through Hole ; Features: EMI Suppression ; Lead Free Status: Lead Fr

ERJ-1TRQF1R1U : 1.1 Ohm 1W Chip Resistor - Surface Mount; RES 1.1 OHM 1W 1% 2512 SMD Specifications: Resistance (Ohms): 1.1 ; Power (Watts): 1W ; Tolerance: 1% ; Packaging: Digi-Reel ; Composition: Thick Film ; Temperature Coefficient: 100ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

ERA-3AEB2611V : 2.61K Ohm 0.1W, 1/10W Chip Resistor - Surface Mount; RES 2.61K OHM 1/10W .1% 0603 SMD Specifications: Resistance (Ohms): 2.61K ; Power (Watts): 0.1W, 1/10W ; Tolerance: 0.1% ; Packaging: Tape & Reel (TR) ; Composition: Thin Film ; Temperature Coefficient: 25ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

ERJ-S03F5232V : 52.3K Ohm 0.1W, 1/10W Chip Resistor - Surface Mount; RES ANTI-SULFUR 52.3KOHM 1% 0603 Specifications: Resistance (Ohms): 52.3K ; Power (Watts): 0.1W, 1/10W ; Tolerance: 1% ; Packaging: Tape & Reel (TR) ; Composition: Thick Film ; Temperature Coefficient: 100ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

ERA-3ARW473V : Ohm Chip Resistor - Surface Mount; RES 47K OHM 1/10W .05% 0603 SMD Specifications: Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

PGA26E19BA-SWEVB008 : Power Management IC Development Tools 600Vdc 190mOhm X-GaN 1/2 Bridge EVB Panasonic 600V Gallium Nitride (GaN) Power Transistors, with its blocking voltage of 600V, enabling fast stable switching operations. This transistor has a normally-off gate injection for power switching systems that require normally-off operations for safe operations. The GaN transistors contribute

 
0-C     D-L     M-R     S-Z