Details, datasheet, quote on part number: 2SA0879
Part2SA0879
CategoryDiscrete => Transistors => Bipolar => General Purpose
DescriptionV<SUB>CEO</SUB>(V) = -200 ;; I<SUB>C</SUB>(A) = -0.7 ;; HFE(min) = 60 ;; HFE(max) = 220 ;; Package = TO-92L-A1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload 2SA0879 datasheet
Cross ref.Similar parts: 2SA879
  

 

Features, Applications

High collector-emitter voltage (Base open) VCEO

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating to +150 Unit W C

Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCEO VEBO hFE VCE(sat) fT Cob Conditions = -100 A, = -1 A, = 0 VCE = -50 mA, -5 mA VCB = 10 mA, = 200 MHz VCB = 1 MHz Min Typ Max Unit V MHz pF

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Rank classification Rank hFE to 220

Note) The part number in the parenthesis shows conventional part number.


Collector output capacitance C (pF) (Common base, input open circuited) ob


 

Related products with the same datasheet
2SA08792SA879
2SA879
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
2SA08792SA879 VCEO(V) = -200 ;; IC(A) = -0.7 ;; HFE(min) = 60 ;; HFE(max) = 220 ;; Package = TO-92L-A1
2SA0885 VCEO(V) = -35 ;; IC(A) = -1 ;; HFE(min) = 85 ;; HFE(max) = 340 ;; Package = TO-126B-A1
2SA0886 VCEO(V) = -40 ;; IC(A) = -1.5 ;; HFE(min) = 80 ;; HFE(max) = 220 ;; Package = TO-126B-A1
2SA0900 VCEO(V) = -18 ;; IC(A) = -1 ;; HFE(min) = 130 ;; HFE(max) = 280 ;; Package = TO-126B-A1
2SA0914 VCEO(V) = -150 ;; IC(A) = -50 ;; HFE(min) = 130 ;; HFE(max) = 330 ;; Package = TO-126B-A1
2SA0921 VCEO(V) = -120 ;; IC(A) = -0.02 ;; HFE(min) = 180 ;; HFE(max) = 700 ;; Package = TO-92-A1TO-92-B1
2SA0963 VCEO(V) = -40 ;; IC(A) = -1.5 ;; HFE(min) = 80 ;; HFE(max) = 220 ;; Package = TO-126B-A1
2SA1018 VCEO(V) = -200 ;; IC(A) = -0.07 ;; HFE(min) = 60 ;; HFE(max) = 220 ;; Package = TO-92-A1TO-92-B1
2SA1022 VCEO(V) = -20 ;; IC(A) = -0.03 ;; HFE(min) = 70 ;; HFE(max) = 220 ;; Package = Mini3-G1
2SA1034 VCEO(V) = -35 ;; IC(A) = -0.05 ;; HFE(min) = 180 ;; HFE(max) = 700 ;; Package = Mini3-G1
2SA1096 VCEO(V) = -50 ;; IC(A) = -2 ;; HFE(min) = 80 ;; HFE(max) = 220 ;; Package = TO-126B-A1
2SA1123 VCEO(V) = -150 ;; IC(A) = -0.05 ;; HFE(min) = 130 ;; HFE(max) = 450 ;; Package = TO-92-A1TO-92-B1
2SA1124
2SA1127 VCEO(V) = -55 ;; IC(A) = -0.1 ;; HFE(min) = 180 ;; HFE(max) = 700 ;; Package = TO-92-A1TO-92-B1
2SA1128 VCEO(V) = -20 ;; IC(A) = -0.5 ;; HFE(min) = 90 ;; HFE(max) = 220 ;; Package = TO-92-A1TO-92-B1
2SA1254 VCEO(V) = -20 ;; IC(A) = -0.03 ;; HFE(min) = 70 ;; HFE(max) = 220 ;; Package = M-A1
2SA1309A VCEO(V) = -50 ;; IC(A) = -0.1 ;; HFE(min) = 160 ;; HFE(max) = 460 ;; Package = NS-A1NS-B1
2SA1310 VCEO(V) = -55 ;; IC(A) = -0.1 ;; HFE(min) = 180 ;; HFE(max) = 700 ;; Package = NS-A1NS-B1
2SA1323 VCEO(V) = -20 ;; IC(A) = -0.03 ;; HFE(min) = 70 ;; HFE(max) = 220 ;; Package = NS-A1NS-B1
2SA1487
2SA1512 VCEO(V) = -20 ;; IC(A) = -0.5 ;; HFE(min) = 90 ;; HFE(max) = 220 ;; Package = NS-A1NS-B1

2SD973A : VCEO(V) = 50 ;; IC(A) = 1 ;; HFE(min) = 85 ;; HFE(max) = 340 ;; Package = M-A1

XN06435 : Composite Transistors Marking = 7W ;; VCEO(V) = -20 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.03 ;; IC(Tr2)(A) = ;; PT(W) = 0.3 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package = Mini6-G1

ECJZEB1H681M : Multilayer Ceramic CHIP Capacitors ( FOR General Electronic Equipment )

ECO-S2DP102CA : 1000F Aluminum Capacitor Radial, Can - Snap-In 200V; CAP ALUM 1000UF 200V 20% SNAP Specifications: Capacitance: 1000F ; ESR (Equivalent Series Resistance): 199.0 mOhm ; Features: General Purpose ; Lifetime @ Temp.: 3000 Hrs @ 85C ; Size / Dimension: 0.984" Dia (25.00mm) ; Lead Spacing: 0.394" (10.00mm) ; Surface Mount Land Size: - ; Mounting Type: Through Hole ; Package / Case:

ERA-6AEB54R9V : 54.9 Ohm 0.125W, 1/8W Chip Resistor - Surface Mount; RES 54.9 OHM 1/8W .1% 0805 SMD Specifications: Resistance (Ohms): 54.9 ; Power (Watts): 0.125W, 1/8W ; Tolerance: 0.1% ; Packaging: Tape & Reel (TR) ; Composition: Thin Film ; Temperature Coefficient: 25ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

ERJ-1GEF1473C : 147K Ohm 0.05W, 1/20W Chip Resistor - Surface Mount; RES 147K OHM 1/20W 1% 0201 SMD Specifications: Resistance (Ohms): 147K ; Power (Watts): 0.05W, 1/20W ; Tolerance: 1% ; Packaging: Cut Tape (CT) ; Composition: Thick Film ; Temperature Coefficient: 200ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

ERJ-2RKF73R2X : 73.2 Ohm 0.1W, 1/10W Chip Resistor - Surface Mount; RES 73.2 OHM 1/10W 1% 0402 SMD Specifications: Resistance (Ohms): 73.2 ; Power (Watts): 0.1W, 1/10W ; Tolerance: 1% ; Packaging: Cut Tape (CT) ; Composition: Thick Film ; Temperature Coefficient: 100ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

EVM-3YSX50B16 : Ohm Trimmer Potentiometers, Variable Resistors Top Adjustment Single Turn; TRIMMER 100 OHM 0.15W SMD Specifications: Resistance (Ohms): 100 ; Power (Watts): 0.15W ; Number of Turns: Single ; Adjustment Type: Top Adjustment ; Tolerance: 25% ; Mounting Type: Surface Mount ; Temperature Coefficient: 250ppm/C ; Resistive Material: Cermet ; Packaging: Digi-Reel ; Lead Free Status: Lead Free ; RoHS S

UNR92A4G0L : Transistor (bjt) - Single, Pre-biased Discrete Semiconductor Product 80mA 50V 125mW NPN - Pre-Biased; TRANS NPN W/RES 80HFE SS-MINI 3P Specifications: Transistor Type: NPN - Pre-Biased ; Voltage - Collector Emitter Breakdown (Max): 50V ; Current - Collector (Ic) (Max): 80mA ; Power - Max: 125mW ; Resistor - Base (R1) (Ohms): 10K ; Resistor - Emitter Base (R2) (Ohms): 47K ; Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA ; Curren

EVM1Y : RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.15 W, 200 ohm - 1000000 ohm Specifications: Potentiometer Type: Trimmer ; Resistance Taper: Linear ; Technology / Construction: Cermet ; Mounting / Packaging: Surface Mount Technology (SMT / SMD) ; Operating Temperature: -40 to 70 C (-40 to 158 F)

PF10NJFB : 1 ELEMENT, 0.01 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD Specifications: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ceramic ; Lead Style: WRAPAROUND ; Application: General Purpose, Power Choke ; Inductance Range: 0.0100 microH ; Rated DC Current: 750 milliamps ; Operating Temperature: -20 to 85 C (-4 to 18

Same catergory

2SK2255-01MR : . High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=30V Guarantee Avalanche-proof Applications Switching regulators UPS DC-DC converters General purpose power amplifier Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Continuous.

AQY410EH : PhotoMOS Relays. VL Max. = 350V ;; Il Max. = 0.13A ;; On-resistance = 18ohm ;; Package = DIP4.

BUK201-50Y : BUK201-50Y; Powermos Transistor TopFET High Side Switch. PowerMOS transistor TOPFET high side switch Monolithic temperature and overload protected power switch based on MOSFET technology a 5 pin plastic envelope, configured as a single high side switch. SYMBOL IL SYMBOL PARAMETER Nominal load current (ISO) PARAMETER Continuous off-state supply voltage Continuous load current Continuous junction temperature.

FQAF47P06 : 60V P-channel QFET. These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices.

HCA10008 : 80v/2.5a Peak, High Frequency Full Bridge Fet Driver. 80V/2.5A Peak, High Frequency Full Bridge FET Driver The is a high frequency, medium voltage Full Bridge N-Channel FET driver IC, available in 20 lead plastic SOIC package. The HCA10008 can drive every possible switch combination except those which would cause a shoot through condition. The HCA10008 can switch at frequencies to 1MHz and is well suited.

STA431A : Array. Motor Driver H-bridge. NPN Symbol min ICBO IEBO VCEO hFE VCE(sat) ton tstg tf V typ max 100 Unit Conditions IC=2A, IB=0.2A VCC IB1=IB2=0.2A V min typ max 100 PNP Unit Conditions IC=2A, IB=0.2A VCC IC=2A, IB1=IB2=0.2A With Infinite Heatsink With Silicone Grease Natural Cooling Heatsink: Aluminum in mm .

05002-180CGZC : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.000018 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 1.80E-5 microF ; Capacitance Tolerance: 2 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

AL0355-181-JB : 1 ELEMENT, 180 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Axial, WIRE ; Application: General Purpose, RF Choke ; Inductance Range: 180 microH ; Inductance Tolerance: 5 (+/- %) ; DCR: 17 ohms ; Rated DC Current: 80 milliamps ; Q Factor: 45 ; SRF: 4 MHz ; Testing Frequency: 1 kHz ; Operating Temperature: -25 to 105 C (-13.

PTI-100-2.5 : 1 ELEMENT, 105 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Core Material: Powdered Iron ; Lead Style: Radial, PRINTED WIRING PIN ; Application: General Purpose, DC-DC CONVERTER ; Inductance Range: 105 microH ; Rated DC Current: 2500 milliamps.

ST230C04C : 810 A, 400 V, SCR, TO-200AB. s: VDRM: 400 volts ; VRRM: 400 volts ; IT(RMS): 810 amps ; IGT: 150 mA ; Pin Count: 2.

UUD1C151MNL1GS : CAP,AL2O3,100UF,16VDC,20% -TOL,20% +TOL. Chip type, low impedance temperature range to +105C. Designed for surface mounting on high density PC board. Applicable to automatic mounting machine using carrier tape. Adapted to the RoHS directive (2002/95/EC). s Item Category Temperature Range Rated Voltage Range Rated Capacitance Range Capacitance Tolerance Leakage Current tan Performance Characteristics.

V10PM12-M3/86A : RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier.

XMFP1-M3 : C BAND, GaAs, N-CHANNEL, RF POWER, JFET. s: Polarity: N-Channel ; Package Type: PLASTIC PACKAGE-3 ; Number of units in IC: 1.

1100NS-10D : RESISTOR, VOLTAGE DEPENDENT, 890 V, 110 J, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED ; Power Rating: 0.4000 watts (5.36E-4 HP) ; Operating DC Voltage: 890 volts.

74454133 : 1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: ONE SURFACE ; Standards and Certifications: RoHS ; Application: General Purpose, Power Choke ; Inductance Range: 33 microH ; Rated DC Current: 1200 milliamps ; Operating.

74454268 : 1 ELEMENT, 680 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Application: General Purpose, Power Choke ; Inductance Range: 680 microH ; Rated DC Current: 260 milliamps ; Operating.

 
0-C     D-L     M-R     S-Z