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Part: 2SA720A
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = -70 ;; I<SUB>C</SUB>(A) = -0.5 ;; HFE(min) = 85 ;; HFE(max) = 240 ;; Package = TO-92-A1TO-92-B1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SA720A datasheet File size : 96 kB
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Datasheet text preview:
Transistors
2SA0720A (2SA720A)
Silicon PNP epitaxial planar type
For low-frequency driver amplification Complementary to 2SC1318A Features
· High collector-emitter voltage (Base open) VCEO · Optimum for the driver stage of a low-frequency and 25 W to 30 W output amplifier
0.7±0.1
Unit: mm
5.0±0.2 4.0±0.2
0.7±0.2 12.9±0.5
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg Rating -8 0 -7 0 -5 - 0.5 -1 625 150 -55 to +150 Unit V V
2.3±0.2
01 0.45+0..15 06 2.5+0..2
5.1±0.2
01 0.45+0..15 06 2.5+0..2
V A A mW °C °C
1
23
1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1
*1
Symbol V CBO V CEO V EBO ICBO h FE1 * 2 h FE2 V CE(sat) V BE(sat) fT Co b
Conditions IC = -10 µA, IE = 0 IC = -2 mA, IB = 0 IE = -10 µA, IC = 0 VCB = -20 V, IE = 0 VCE = -10 V, IC = -150 mA VCE = -10 V, IC = -500 mA IC = -300 mA, IB = -30 mA IC = -300 mA, IB = -30 mA VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz
Min -8 0 -7 0 -5
Typ
Max
Unit V V V
- 0.1 85 40 - 0.2 - 0.85 120 20 30 - 0.6 -1.50 240
µA V V MHz pF
Collector-emitter saturation voltage Base-emitter saturation voltage *1 Transition frequency
Collector output capacitance (Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurment *2: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2003 SJC00003BED
1
2SA0720A
PC Ta
800
-1.2
IC VCE
Ta = 25°C IB = -10 mA -9 mA
IC I B
-1.2 VCE = -10 V Ta = 25°C
Collector power dissipation PC (mW)
-1.0
-1.0
Collector current IC (A)
- 0.8
400
- 0.6
-6 mA -5 mA -4 mA -3 mA -2 mA -1 mA
- 0.4
200
- 0.2
Collector current IC (A)
600
-8 mA -7 mA
- 0.8
- 0.6
- 0.4
- 0.2
0
0
40
80
120
160
0
0
-2
-4
-6
-8
-10
0
0
-2
-4
-6
-8
-10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base current IB (mA)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-10
VBE(sat) IC
-100
hFE IC
300 VCE = -10 V
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 10
IC / IB = 10
-1 Ta = 75°C 25°C -25°C
-10 25°C -1 Ta = -25°C 75°C
Forward current transfer ratio hFE
250
200
Ta = 75°C 25°C
- 0.1
150 -25°C 100
- 0.01
- 0.1
50
- 0.001 -1
-10
-100
-1 000
- 0.01 -1
-10
-100
-1 000
0 -1
-10
-100
-1 000
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
fT I E
Collector output capacitance C (pF) (Common base, input open circuited) ob
200 VCB = -10 V Ta = 25°C
50
Cob VCB
IE = 0 f = 1 MHz Ta = 25°C
IC E O T a
104 VCB = -20 V
Transition frequency fT (MHz)
160
40
103
30
120
ICBO (Ta) ICBO (Ta = 25°C)
-10 -100
102
80
20
10
10
40
0
1
10
100
0 -1
1
0
40
80
120
160
Emitter current IE (mA)
Collector-base voltage VCB (V)
Ambient temperature Ta (°C)
2
SJC00003BED
Others parts begin by 2s
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