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Part: 2SB09492SB949
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
Description:
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SB09492SB949 datasheet File size : 107 kB
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Datasheet text preview:
Power Transistors
2SB0949, 2SB0949A (2SB949, 2SB949A)
Silicon PNP epitaxial planar type Darlington
0.7±0.1
For power amplification and switching Complementary to 2SD1275 and 2SD1275A I Features
· High forward current transfer ratio hFE · High-speed switching · Full-pack package which can be installed to the heat sink with one screw
16.7±0.3
Unit: mm
10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2
7.5±0.2
3.1±0.1
4.2±0.2
Solder Dip (4.0)
14.0±0.5
I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base voltage Collector to emitter voltage 2SB0949 2SB0949A 2SB0949 2SB0949A VEBO ICP IC TC = 25°C Ta = 25°C Tj Tstg PC VCEO Symbol VCBO Rating -60 -80 -60 -80 -5 -4 -2 35 2 150 -55 to +150 °C °C V A A W V Unit V
1.4±0.1
1.3±0.2
02 0.5+0..1
0.8±0.1
2.54±0.3 5.08±0.5
123
Emitter to base voltage Peak collector current Collector current Collector power dissipation
1 : Base 2 : Collector 3 : Emitter EIAJ : SC-67 TO-220F-A1 Package
Internal Connection
C B
Junction temperature Storage temperature
I Electrical Characteristics TC = 25°C
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB0949 2SB0949A hFE1 h FE2 * Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Note) *: Rank classification Rank hFE2 Q P VBE VCE(sat) fT ton tstg tf VCE = -4 V, IC = -1 A VCE = -4 V, IC = -2 A VCE = -4 V, IC = -2 A IC = -2 A, IB = -8 mA VCE = -10 V, IC = - 0.5 A, f = 1 MHz IC = -2 A, IB1 = -8 mA, IB2 = 8 mA, VCC = -50 V 20 0.4 1.5 0.5 2SB0949 2SB0949A 2SB0949 2SB0949A IEBO V CEO ICEO Symbol ICBO Conditions VCB = -60 V, IE = 0 VCB = -80 V, IE = 0 VCB = -30 V, IB = 0 VCB = -40 V, IB = 0 VEB = -5 V, IC = 0 IC = -30 mA, IB = 0 -6 0 -8 0 1 000 2 000 Min Typ
E
Max -1 -1 -2 -2 -2
Unit mA
mA
mA V
Forward current transfer ratio
10 000 -2 . 8 -2 . 5 V V MHz µs µs µs
2 000 to 5 000 4 000 to 10 000 Note.) The Part numbers in the Parenthesis show conventional part number.
100
Power Transistors
PC T a
50 5 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25°C IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 2 0.4mA
2SB0949, 2SB0949A
IC VCE
10 VCE=4V
IC VBE
Collector power dissipation PC (W)
Collector current IC (A)
30
3
Collector current IC (A)
40
4
8
6 25°C 4 TC=100°C 25°C
20
(1)
10 (3) (4) 0 0 20 40 60
(2)
1
0.2mA 0.1mA
2
0 80 100 120 140 160 0 1 2 3 4 5
0 0 0.8 1.6 2.4 3.2
Ambient temperature Ta (°C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=250 30 10 3 1 TC=100°C 25°C 25°C 1 05
hFE IC
10000
Cob VCB
Collector output capacitance Cob (pF)
VCE=4V I E= 0 f=1MHz TC=25°C
Forward current transfer ratio hFE
3000 1000 300 100 30 10 3 1 0.1 0.3
1 04
TC=100°C
25°C
25°C 1 03
0.3 0.1
1 02
0.03 0.01 0.01 0.03 0.1 0.3
1
3
10
10 0.01 0.03 0.1 0.3
1
3
10
1
3
10
30
100
Collector current IC (A)
Collector current IC (A)
Collector to base voltage VCB (V)
Area of safe operation (ASO)
100 30 1 03 Non repetitive pulse TC=25°C
Rth(t) t
(1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1)
Thermal resistance Rth(t) (°C/W)
Collector current IC (A)
102
10 IC P 3 IC 1 DC t=1ms 10ms
10
(2)
0.3 0.1
1
0.03 0.01 1
2SB0949A
2SB0949
101
3
10
30
100 300 1000
102 104
103
102
1 0 1
1
10
102
103
1 04
Collector to emitter voltage VCE (V)
Time t (s)
101
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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