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Part: 2SB0951A
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = -80 ;; I<SUB>C</SUB>(A) = -8 ;; HFE(min) = 1000 ;; HFE(max) = 10000 ;; Package = TO-220F-A1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SB0951A datasheet File size : 107 kB
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Datasheet text preview:
Power Transistors
2SB0951 (2SB951), 2SB0951A (2SB951A)
Silicon PNP epitaxial planar type darlington
0.7±0.1
For midium-speed switching Complementary to 2SD1277 and 2SD1277A Features
· High forward current transfer ratio hFE · High-speed switching · Full-pack package which can be installed to the heat sink with one screw
16.7±0.3
Unit: mm
10.0±0.2 5.5±0.2
4.2±0.2
4.2±0.2 2.7±0.2
7.5±0.2
3.1±0.1
Solder Dip (4.0)
14.0±0.5
Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) 2SB0951 2SB0951A V CEO V EBO IC ICP PC Ta = 25°C Tj Tstg Symbol V CBO Rating -6 0 -8 0 -6 0 -8 0 -7 -8 -1 2 45 2 150 -55 to +150 °C °C V A A W V Unit V
1.4±0.1
1.3±0.2
02 0.5+0..1
0.8±0.1
2.54±0.3 5.08±0.5
Collector-emitter voltage 2SB0951 (Base open) 2SB0951A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
123
1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package
Internal Connection
C B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SB0951 2SB0951A 2SB0951 2SB0951A IEBO hF E 1 * h FE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time V CE(sat) V BE(sat) fT to n tstg tf ICBO VCB = -60 V, IE = 0 VCB = -80 V, IE = 0 VEB = -7 V, IC = 0 VCE = -3 V, IC = -4 A VCE = -3 V, IC = -8 A IC = -4 A, IB = -8 mA IC = -4 A, IB = -8 mA VCE = -10 V, IC = -1 A, f = 1 MHz IC = -4 A, IB1 = -8 mA, IB2 = 8 mA VCC = -50 V 20 0.5 2.0 1.0 1 000 500 -1.5 -2.0 V V MHz µs µs µs Symbol V CEO Conditions IC = -30 mA, IB = 0 Min -6 0 -8 0 -100 -100 -2 10 000 mA µA Typ Max Unit V
Emitter-base cutoff current (Collector open) Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 R 1 000 to 2 500 Q P
2 000 to 5 000 4 000 to 10 000 Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2003
SJD00030BED
1
2SB0951, 2SB0951A
PC Ta
50 -8
(1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W) TC=25°C
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
-100
VCE(sat) IC
IC/IB=500
Collector power dissipation PC (W)
40
Collector current IC (A)
-6
30 (1) 20
IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA
-10
-4
25°C TC=100°C
-1
25°C
-2
0.2mA
10 (3) (4) 0 0 40
(2)
80
120
160
0
0
-1
-2
-3
-4
-5
- 0.1 - 0.1
-1
-10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100
VBE(sat) IC
-100
IC/IB=500
VBE(sat) IC
-100
Base-emitter saturation voltage VBE(sat) (V)
-10
(3)
-10
TC=25°C 25°C 100°C
Base-emitter saturation voltage VBE(sat) (V)
(1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25 C
(1)IC/IB=250 (2)IC/IB=500 (3)IC/IB=1000 TC=25°C
-10 (1) (2) (3) -1
(2) -1 (1)
-1
- 0.1 - 0.1
-1
-10
- 0.01 - 0.1
-1
-10
- 0.1 - 0.1
-1
-10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
hFE IC
Collector output capacitance C (pF) (Common base, input open circuited) ob
105
VCE=3V
Cob VCB
104
IE=0 f=1MHz TC=25°C
Safe operation area
-100
Non repetitive pulse TC=25°C ICP IC t=1ms t=10ms DC
Forward current transfer ratio hFE
TC=100°C
104
25°C
Collector current IC (A)
25°C
103
-10
10
2
-1
103
10
- 0.1
2SB0951A 2SB0951
102 - 0.1
-1
-10
1 - 0.1
-1
-10
-100
- 0.01 -1
-10
-100
-1 000
Collector current IC (A)
Collector-base voltage VCB (V)
Collector-emitter voltage VCE (V)
2
SJD00030BED
2SB0951, 2SB0951A
Rth t
103 (1)Without heat sink (2)With a 100×100×2mm Al heat sink (1)
Thermal resistance Rth (°C/W)
1 02
10
(2)
1
10-1
10-2 10-4
10-3
10-2
10-1
1
10
1 02
1 03
1 04
Time t (s)
SJD00030BED
3
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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