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Part: 2SB09562SB956
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = -20 ;; I<SUB>C</SUB>(A) = -1 ;; HFE(min) = 130 ;; HFE(max) = 280 ;; Package = MiniP3-F1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SB09562SB956 datasheet File size : 107 kB
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Datasheet text preview:
Transistors
2SB0956
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency output amplification Complementary to 2SD1280 Features
· Large collector power dissipation PC · Low collector-emitter saturation voltage VCE(sat) · Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
4.5±0.1 1.6±0.2 1.5±0.1
0 25 4.0+0..20
2.5±0.1 3°
0.4±0.04
0.4±0.08 1.5±0.1 3°
01 1.0+0..2
1
3 2 0.5±0.08
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
*
45°
3.0±0.15
Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg
Rating -2 0 -2 0 -5 -1 -2 1 150 -55 to +150
Unit V V V A A W °C °C
1: Base 2: Collector 3: Emitter MiniP3-F1 Package
Marking Symbol: H
Note) *: Print circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion
cm2
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Emiter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Collector-emitter saturation voltage *1 Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited)
*1
Symbol V CEO V EBO ICBO h FE1 * 2 h FE2 V CE(sat) V BE(sat) fT Co b
Conditions IC = -1 mA, IB = 0 IE = -10 µA, IC = 0 VCB = -10 V, IE = 0 VCE = -2 V, IC = -500 mA VCE = -2 V, IC = -1.5 A IC = -1 A, IB = -50 mA IC = -500 mA, IB = -50 mA VCB = -6 V, IE = 50 mA, f = 200 MHz VCB = -6 V, IE = 0, f = 1 MHz
Min -20 -5
Typ
Max
Unit V V
-1 130 50 - 0.5 - 1.2 200 40 280
µA V V MHz pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1 : Pulse measurement *2 : Rank classification Rank hFE1 R 130 to 210 S 180 to 280
0.4 max.
2.6±0.1
Publication date: December 2002
SJC00062CED
1
2SB0956
PC Ta
1.4
-1.2
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
Ta = 25°C IB = -5.0 mA -4.5 mA -4.0 mA -3.5 mA -3.0 mA -2.5 mA -2.0 mA -1.5 mA -1.0 mA - 0.5 mA -10
VCE(sat) IC
IC / IB = 20
Collector power dissipation PC (W)
1.2 1.0 0.8 0.6 0.4 0.2 0
Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness
-1.0
Collector current IC (A)
-1
25ºC
Ta = 75ºC
- 0.8
-25ºC
- 0.6
- 0.1
- 0.4
- 0.01
- 0.2
0
0
20
40
60
80 100 120 140 160
0
-1
-2
-3
-4
-5
-6
- 0.001 - 0.01
- 0.1
-1
-10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
-10
hFE IC
600 VCE = -2 V 500
fT I E
VCB = -6 V Ta = 25°C
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 10
Forward current transfer ratio hFE
Transition frequency fT (MHz)
-1 -10
25°C -1 Ta = -25°C 75°C
500
400
400 Ta = 75°C 25°C 200 -25°C
300
- 0.1
300
200
- 0.01
100
100
- 0.001 - 0.01
- 0.1
-1
-10
0 - 0.01
- 0.1
0 10
100
1 000
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
120 IE = 0 f = 1 MHz Ta = 25°C -10 ICP
Safe operation area
Single pulse Ta = 25°C t = 10 ms IC t=1s
100
80
Collector current IC (A)
-10 -100
-1
60
- 0.1
40
- 0.01
20
0 -1
- 0.001 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Collector-emitter voltage VCE (V)
2
SJC00062CED
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