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Part: 2SB0968
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = -40 ;; I<SUB>C</SUB>(A) = -1.5 ;; HFE(min) = 50 ;; HFE(max) = 220 ;; Package = U-A1U-G2
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SB0968 datasheet File size : 107 kB
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Datasheet text preview:
Power Transistors
2SB0968 (2SB968)
Silicon PNP epitaxial planar type
For low-frequency output amplification Complementary to 2SD1295 Features
· Possible to solder radiation fin directly to printed circuit board · High collector-emitter voltage (Base open) VCEO · Large collector power dissipation PC
Unit: mm
6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1
7.3±0.1
1.8±0.1
0.8 max.
2.5±0.1
2 1 4.6±0.1 3
0.75±0.1 2.3±0.1
1.0±0.1 0.1±0.05 0.5±0.1 (5.3) (4.35) (3.0)
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation (TC = 25°C) Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg Rating -5 0 -4 0 -5 -1.5 -3 10 150 -55 to +150 Unit V V V A A W °C °C
1
(1.8)
2 3
1.0±0.2
1: Base 2: Collector 3: Emitter EIAJ: SC-63 U-G1 Package
Note) Self-supported type package is also prepared.
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol V CBO V CEO ICBO ICEO IEBO hF E 1
*
Conditions IC = -1 mA, IE = 0 IC = -2 mA, IB = 0 VCB = -20 V, IE = 0 VCE = -10 V, IB = 0 VEB = -5 V, IC = 0 VCE = -5 V, IC = -1 A VCE = -5 V, IC = -1 mA IC = -1.5 A, IB = - 0.15 A IC = -2 A, IB = - 0.2 A VCE = -5 V, IC = - 0.5 A, f = 200 MHz VCB = -20 V, IE = 0, f = 1 MHz
Min - 50 -40
Typ
Max
Unit V V
-1 - 100 -1 0 80 10 -1 - 1.5 150 45 220
µA µA µA V V MHz pF
h FE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) V CE(sat) V BE(sat) fT Co b
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 80 to 160 R 120 to 220 Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2003 SJD00035AED
(5.5)
1
2SB0968
PC Ta
16
TC=Ta
IC VCE
TC=25°C IB=40mA 35mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-10
IC/IB=10
-4.0 -3.5
Collector power dissipation PC (W)
Collector current IC (A)
12
-3.0 -2.5
30mA 25mA 20mA
-1
8
-2.0
15mA
-1.5 -1.0
10mA 5mA
TC=100°C 25°C 25°C
- 0.1
4
- 0.5
0
0
0
40
80
120
160
0
-2
-4
-6
-8
-10
- 0.01 - 0.01
- 0.1
-1
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
Base-emitter saturation voltage VBE(sat) (V)
-10
IC/IB=10
hFE IC
240
VCE=5V
fT I E
VCB=5V f=200MHz TC=25°C
1 000
Forward current transfer ratio hFE
TC=100°C
25°C
Transition frequency fT (MHz)
200
160
-1
TC=25°C 100°C 25°C
100
25°C
120
- 0.1
10
80
40
- 0.01 - 0.01
- 0.1
-1
1 - 0.01
- 0.1
-1
0 10
102
103
104
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
-120
VCER RBE
Collector-emitter voltage (V) (Resistor between B and E) VCER
IE=0 f=1MHz TC=25°C
IC E O T a
TC=25°C
1 000
140 120 100 80 60 40 20 0 -1
VCE=12V
-100
-60
-40
ICEO (Ta) ICEO (Ta = 25°C)
0.01 0.1 1 10
-80
100
10
-20
-10
-100
0 0.001
1
0
20
40
60
80
100
120
Collector-base voltage VCB (V)
Base-emitter resistance RBE (k)
Ambient temperature Ta (°C)
2
SJD00035AED
2SB0968
Safe operation area
-10
ICP Single pulse TC=25°C
Collector current IC (A)
-1 IC
t=1ms
t=1s
- 0.1
- 0.01
- 0.001 - 0.1
-1
-10
-100
Collector-emitter voltage VCE (V)
SJD00035AED
3
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