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Part: 2SB09702SB970
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = -10 ;; I<SUB>C</SUB>(A) = -0.5 ;; HFE(min) = 130 ;; HFE(max) = 350 ;; Package = Mini3-G1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SB09702SB970 datasheet File size : 107 kB
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Datasheet text preview:
Transistors
2SB0970 (2SB970)
Silicon PNP epitaxial planar type
For low-voltage output amplification Features
· Low collector-emitter saturation voltage VCE(sat) · Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing
0 10 0.40+0..05
Unit: mm
0 10 0.16+0..06
3
0 25 1.50+0..05 02 2.8+0..3
1
2
(0.65)
(0.95) (0.95)
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg Rating -1 5 -1 0 -7 - 0.5 -1 200 150 -55 to +150 Unit
10°
1.9±0.1
0 20 2.90+0..05
V
02 1.1+0..1
V V A A mW °C °C
03 1.1+0..1
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
Marking Symbol: 1R
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1
*1
Symbol V CBO V CEO V EBO ICBO h FE1 * 2 h FE2 V CE(sat) V BE(sat) fT Co b
Conditions IC = -10 µA, IE = 0 IC = -1 mA, IB = 0 IE = -10 µA, IC = 0 VCB = -10 V, IE = 0 VCE = -2 V, IC = - 0.5 A VCE = -2 V, IC = -1 A IC = - 0.4 A, IB = -8 mA IC = - 0.4 A, IB = -8 mA VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz
Min - 15 -10 -7
Typ
0 to 0.1
Max
Unit V V V
- 100 130 60 - 0.16 - 0.30 - 0.8 130 22 - 1.2 350
nA V V MHz pF
Collector-emitter saturation voltage Base-emitter saturation voltage *1 Transition frequency
Collector output capacitance (Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1 : Pulse measurement *2 : Rank classification Rank hFE1 R 130 to 220 S 180 to 350
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2003 SJC00063BED
0.4±0.2
5°
1
2SB0970
PC Ta
240
-1.2
IC VCE
IB = -10 mA -9 mA -8 mA -7 mA -6 mA -5 mA -4 mA -3 mA -2 mA -1 mA
VBE(sat) IC
Base-emitter saturation voltage VBE(sat) (V)
Ta = 25°C
-100 IC / IB = 50
Collector power dissipation PC (mW)
200
-1.0
160
Collector current IC (A)
-10
- 0.8
25°C -1
120
- 0.6
Ta = -25°C 75°C
80
- 0.4
- 0.1
40
- 0.2
0
0
40
80
120
160
0
0
-1
-2
-3
-4
-5
-6
- 0.01 - 0.01
- 0.1
-1
-10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100 IC / IB = 50
hFE IC
600 VCE = -2 V
fT I E
200 VCB = -10 V Ta = 25°C
Forward current transfer ratio hFE
Transition frequency fT (MHz)
-1 -10
500
-10
160
400
Ta = 75°C 25°C -25°C
120
-1
300
80
- 0.1
Ta = 75°C 25°C -25°C
200
100
40
- 0.01 - 0.01
- 0.1
-1
-10
0 - 0.01
- 0.1
0
1
10
100
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
80 IE = 0 f = 1 MHz Ta = 25°C 60
40
20
0 -1
-10
-100
Collector-base voltage VCB (V)
2
SJC00063BED
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