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Part: 2SB0976
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = -18 ;; I<SUB>C</SUB>(A) = -5 ;; HFE(min) = 125 ;; HFE(max) = 625 ;; Package = TO-92-A1TO-92-B1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SB0976 datasheet File size : 107 kB
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Datasheet text preview:
Transistors
2SB0976 (2SB976)
Silicon PNP epitaxial planar type
For low-frequency output amplification For DC-DC converter For stroboscope Features
· Low collector-emitter saturation voltage VCE(sat) · Large collector current IC
0.7±0.1
Unit: mm
5.0±0.2 4.0±0.2
0.7±0.2 12.9±0.5
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg Rating -2 7 -1 8 -7 -5 -8 0.75 150 -55 to +150 Unit V V
1 23
01 0.45+0..15 06 2.5+0..2 06 2.5+0..2 01 0.45+0..15
2.3±0.2
V A A W °C °C
5.1±0.2
1: Emitter 2: Collector 3: Base TO-92-B1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio *1, 2 Collector-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited) Symbol V CEO V EBO ICBO IEBO h FE V CE(sat) fT Co b Conditions IC = -1 mA, IB = 0 IE = -10 µA, IC = 0 VCB = -10 V, IE = 0 VEB = -5 V, IC = 0 VCE = -2 V, IC = -2 A IC = -3 A, IB = - 0.1 A VCB = -6 V, IE = 50 mA, f = 200 MHz VCB = -20 V, IE = 0, f = 1 MHz 125 - 0.4 120 60 Min -1 8 -7 -100 -1 625 -1.0 Typ Max Unit V V nA µA V MHz pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1 : Pulse measurement *2 : Rank classification Rank hFE Q 125 to 205 R 180 to 625
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2003 SJC00064BED
1
2SB0976
PC Ta
1.0
-6
IC VCE
Ta = 25°C IB = -40 mA -35 mA -30 mA
IC VBE
-12 VCE = -2 V
Collector power dissipation PC (mW)
0.8
-5
-10
Collector current IC (A)
Collector current IC (A)
-25 mA -4 -20 mA -15 mA -10 mA -2 -5 mA
-8 Ta = 75°C
25°C -25°C
0.6
-3
-6
0.4
-4
0.2
-1
-2
-1 mA 0 -2 -4 -6 -8 -10 -12
0
0
40
80
120
160
0
0
0
- 0.4
- 0.8
-1.2
-1.6
-2.0
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100 IC / IB = 30
1 000
hFE IC
240
VCE = -2 V
fT I E
VCB = -6 V Ta = 25°C
Forward current transfer ratio hFE
-10
800
Transition frequency fT (MHz)
-1 -10
200
160
600 Ta = 75°C 400 25°C -25°C
-1
Ta = 75°C 25°C -25°C
120
80
- 0.1
200
40
- 0.01 - 0.01
- 0.1
-1
-10
0 - 0.01
- 0.1
0
1
10
100
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
200 IE = 0 f = 1 MHz Ta = 25°C
160
120
80
40
0 -1
-10
-100
Collector-base voltage VCB (V)
2
SJC00064BED
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