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Part: 2SB1221
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = -200 ;; I<SUB>C</SUB>(A) = -0.07 ;; HFE(min) = 30 ;; HFE(max) = 220 ;; Package = TO-92NL-A1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SB1221 datasheet File size : 147 kB
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Datasheet text preview:
Transistors
2SB1221
Silicon PNP epitaxial planar type
For general amplification
5.0±0.2 4.0±0.2
Unit: mm
· Low collector-emitter saturation voltage VCE(sat) · Allowing supply with the radial taping
0.7±0.2
0.7±0.1
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg
Rating -250 -200 -5 -7 0 -100 1 150 -55 to +150
Unit V V V mA mA W °C °C
02 0.45+0..1
13.5±0.5
01 0.45+0..15
Absolute Maximum Ratings Ta = 25°C
123
1: Emitter 2: Collector 2.54±0.15 3: Base TO-92NL-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol V CEO V EBO h FE V CE(sat) fT Co b Conditions IC = -100 µA, IB = 0 IE = -1 µA, IC = 0 VCE = -10 V, IC = -5 mA IC = -50 mA, IB = -5 mA VCB = -10 V, IE = 10 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz 50 80 5 10 Min -200 -5 30 220 - 1.5 Typ Max Unit V V V MHz pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE P 30 to 100 Q 60 to 150 R 100 to 220
2.3±0.2
(1.27)
(1.27)
8.0±0.2
Features
Publication date: March 2003
SJC00074BED
1
2SB1221
PC Ta
1.2
-120
IC VCE
Ta = 25°C IB = -2 mA -1.8 mA -1.6 mA -1.4 mA -1.2 mA -1.0 mA - 0.8 mA - 0.6 mA -40 - 0.4 mA
IC I B
-120 VCE = -10 V Ta = 25°C
Collector power dissipation PC (W)
1.0
-100
-100
Collector current IC (mA)
Collector current IC (mA)
0.8
-80
-80
0.6
-60
-60
0.4
-40
0.2
-20
- 0.2 mA
-20
0
0
40
80
120
160
0
0
-2
-4
-6
-8
-10
0
0
- 0.4 - 0.8 -1.2
-1.6
-2.0
-2.4
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base current IB (mA)
I B VB E
-2.4 VCE = -10 V Ta = 25°C
IC VBE
VCE = -10 V 25°C Ta = 75°C -25°C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100 IC / IB = 10
-120
-2.0
-100
Collector current IC (mA)
Base current IB (mA)
-10
-1.6
-80
-1.2
-60
-1 25°C Ta = 75°C -25°C
- 0.8
-40
- 0.1
- 0.4
-20
0
0
- 0.2 - 0.4 - 0.6 - 0.8 -1.0
-1.2
0
0
- 0.4
- 0.8
-1.2
-1.6
-2.0
- 0.01 - 0.1
-1
-10
-100
Base-emitter voltage VBE (V)
Base-emitter voltage VBE (V)
Collector current IC (mA)
hFE IC
300 VCE = -10 V
fT I E
VCB = -10 V Ta = 25°C
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
16 IE = 0 f = 1 MHz Ta = 25°C 12
160
Forward current transfer ratio hFE
Transition frequency fT (MHz)
250
120
200 Ta = 75°C 150 25°C -25°C
80
8
100
40
4
50
0 - 0.1
-1
-10
-100
0 0.1
1
10
100
0 -1
-10
-100
Collector current IC (mA)
Emitter current IE (mA)
Collector-base voltage VCB (V)
2
SJC00074BED
2SB1221
IE B O T a
104 VEB = -5 V
IC B O T a
104 VCB = -250 V
-1 000
Safe operation area
Single pulse Ta = 25°C IC P IC t=1s -10 t = 10 ms
102
102
Collector current IC (A)
103
103
-100
ICBO (Ta) ICBO (Ta = 25°C)
IEBO (Ta) IEBO (Ta = 25°C)
10
10
-1
1
0
40
80
120
160
200
1
0
40
80
120
160
200
- 0.1 -1
-10
-100
-1 000
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
SJC00074BED
3
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