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Part: 2SB1254

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> Power
             -> Audio

Description: V<SUB>CEO</SUB>(V) = -140 ;; I<SUB>C</SUB>(A) = -7 ;; HFE(min) = 2000 ;; Package = TOP-3F-A1TOP-3F-B1

Company: Panasonic Industrial Company/Electronic Components

Datasheet: Download 2SB1254 datasheet     File size : 147 kB

Request For quote: Find where to buy 2SB1254



Datasheet text preview:
Power Transistors

2SB1254
Silicon PNP epitaxial planar type darlington
Unit: mm

For power amplification Complementary to 2SD1894 Features
· Optimum for 60 W HiFi output · High forward current transfer ratio hFE · Low collector-emitter saturation voltage VCE(sat) · Full-pack package which can be installed to the heat sink with one screw
21.0±0.5

15.0±0.3
(0.7)

5.0±0.2 (3.2)

11.0±0.2

3.2±0.1
15.0±0.2 (3.5) Solder Dip

2.0±0.2 1.1±0.1

2.0±0.1 0.6±0.2

16.2±0.5

Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol V CBO V CEO V EBO IC ICP PC Rating -160 -140 -5 -7 -1 2 70 3 150 -55 to +150 °C °C Unit V V V A A W
1

5.45±0.3 10.9±0.5 2 3

1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package

Internal Connection
C B

E

Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol V CEO ICBO ICEO IEBO h FE1 hF E 2 * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time V CE(sat) V BE(sat) fT to n tstg tf Conditions IC = -30 mA, IB = 0 VCB = -160 V, IE = 0 VCE = -140 V, IB = 0 VEB = -5 V, IC = 0 VCE = -5 V, IC = -1 A VCE = -5 V, IC = -6 A IC = -6 A, IB = -6 mA IC = -6 A, IB = -6 mA VCE = -10 V, IC = - 0.5 A, f = 1 MHz IC = -6 A, IB1 = -6 mA, IB2 = 6 mA VCC = -50 V 20 1.0 1.5 1.2 2 000 5 000 30 000 -2.5 -3.0 V V MHz µs µs µs Min -140 -100 -100 -100 Typ Max Unit V µA µA µA

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 Q S P

5 000 to 15 000 7 000 to 21 000 8 000 to 30 000

Publication date: March 2003

SJD00063BED

1

2SB1254
PC Ta
80
(1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)Without heat sink (1) (PC=3W)

IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
-12
IB=­5mA TC=25°C

VCE(sat) IC
-100
IC/IB=1000

Collector power dissipation PC (W)

-10

Collector current IC (A)

60

-8

40

-6

­1mA ­0.9mA ­0.8mA ­0.7mA ­0.6mA ­0.5mA ­0.4mA ­0.3mA

-10
TC=100°C 25°C ­25°C

-4

-1

20 (2) (3) 0

-2

­0.2mA ­0.1mA

0

0

40

80

120

160

0

-2

-4

-6

-8

-10

-12

- 0.1 - 0.1

-1

-10

-100

Ambient temperature Ta (°C)

Collector-emitter voltage VCE (V)

Collector current IC (A)

VBE(sat) IC
-100
IC/IB=1000

hFE IC
VCE=­5V 25°C TC=100°C

Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
1 000
IE=0 f=1MHz TC=25°C

105

Base-emitter saturation voltage VBE(sat) (V)

Forward current transfer ratio hFE

104
­25°C

-10

100

103

TC=­25°C

-1
100°C 25°C

10

102

- 0.1 - 0.1

-1

-10

-100

10 - 0.01

- 0.1

-1

-10

1 -1

-10

-100

Collector current IC (A)

Collector current IC (A)

Collector-base voltage VCB (V)

ton , tstg , tf IC
Turn-on time ton , Storage time tstg , Fall time tf (µs)
100
Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (­IB1=IB2) VCC=­50V TC=25°C tstg tf

Safe operation area
-100
Non repetitive pulse TC=25°C ICP IC t=10ms t=1ms

Collector current IC (A)

10

-10

1

ton

-1
DC

0.1

- 0.1

0.01

0

-4

-8

-12

-16

- 0.01 -1

-10

-100

-1 000

Collector current IC (A)

Collector-emitter voltage VCE (V)

2

SJD00063BED

2SB1254
Rth t
104
Note: Rth was measured at Ta=25°C and under natural convection. (1)PT=10V×0.3A(3W) and without heat sink (2)PT=10V×1.0A(10W) and with a 100×100×2mm Al heat sink

Thermal resistance Rth (°C/W)

103

102 (1) 10 (2)

1

10-1 10-4

10-3

10-2

10-1

1

10

102

103

104

Time t (s)

SJD00063BED

3



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