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Part: 2SB1488
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = -400 ;; I<SUB>C</SUB>(A) = -0.5 ;; HFE(min) = 80 ;; HFE(max) = 280 ;; Package = MT-2-A1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SB1488 datasheet File size : 163 kB
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Datasheet text preview:
Transistors
2SB1488
Silicon PNP triple diffusion planar type
For power switching
0.7 6.9±0.1 4.0
(1.0) (0.2) 4.5±0.1
Unit: mm
2.5±0.1 (0.8)
(0.5)
0 10 0.45+0..05
Features
· High forward current transfer ratio hFE · High-speed switching · High collector-base voltage (Emitter open) VCBO · Allowing supply with the radial taping
0.65 max.
(1.0)
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg Rating -400 -400 -7 - 0.5 -1 1 150 -55 to +150 cm2 Unit V V V A A W °C °C
1 2 3 2.5±0.5 2.5±0.5
0 10 0.45+0..05
1.05±0.05
14.5±0.5
1: Emitter 2: Collector 3: Base MT-2-A1 Package
Note) *: Print circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol V CEO ICBO ICEO IEBO hF E 1
*
Conditions IC = -1 mA, IB = 0 VCB = -400 V, IE = 0 VCE = -100 V, IB = 0 VEB = -5 V, IC = 0 VCE = -5 V, IC = -50 mA VCE = -5 V, IC = -300 mA IC = -100 mA, IB = -10 mA IC = -100 mA, IB = -10 mA VCB = -10 V, IE = 0.1 A, f = 200 MHz IC = -100 mA, RL = 1.5 k IB1 = -10 mA, IB2 = 10 mA VCC = -150 V VCB = -10 V, IE = 0, f = 1 MHz
Min -400
Typ
Max -1 -1 -1
Unit V µA µA µA V V MHz µs µs µs pF
80 10
280 - 0.25 - 0.50 - 0.8 25 0.4 5.5 0.5 20 1.0 6.5 1.0 40 - 1.2
h FE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Collector output capacitance (Common base, input open circuited) V CE(sat) V BE(sat) fT to n tstg tf Co b
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 P 80 to 160 Q 130 to 280
Publication date: January 2003
SJC00090BED
1
2SB1488
PC Ta
1.2 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness
-1.0
IC VCE
Ta = 25°C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100 IC / IB = 5
Collector power dissipation PC (W)
1.0
0.8
Collector current IC (mA)
- 0.8
-10
Ta = 100°C 25°C
- 0.6
IB = 100 mA
0.6
-1
-25°C
- 0.4
50 mA 10 mA 5 mA 1 mA 0.5 mA 0.1 mA 0 -2 -4 -6 -8 -10 -12
0.4
0.2
- 0.2
- 0.1
0
0
0
20
40
60
80 100 120 140 160
- 0.01 - 0.01
- 0.1
-1
-10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
-100
hFE IC
IC / IB = 5
10 000 VCE = -5 V
fT I C
1 000 VCE = -10 V Ta = 25°C
Base-emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
-10
Transition frequency fT (MHz)
1 000 Ta = 100°C 100 -25°C 25°C
100
-1
25°C Ta = -25°C 100°C
10
- 0.1
10
1
- 0.01 - 0.01
- 0.1
-1
-10
1 - 0.001
- 0.01
- 0.1
-1
0.1 - 0.001
- 0.01
- 0.1
-1
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
100 IE = 0 f = 1 MHz Ta = 25°C
100
t o n , t stg , t f I C
Pulsed tw = 1 ms Duty cycle = 1% IC / IB = 5 (-IB1 = IB2) VCC = -100 V Ta = 25°C tstg 1
80
Switching time ton , tstg , tf (µs)
10
60
tf ton
40
0.1
20
0 -1
-10
-100
0.01
0
- 0.2
- 0.4
- 0.6
- 0.8
-1.0
Collector-base voltage VCB (V)
Collector current IC (A)
2
SJC00090BED
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