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Part: 2SB1504
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
Description: V<SUB>CEO</SUB>(V) = -50 ;; I<SUB>C</SUB>(A) = -8 ;; HFE(min) = 1000 ;; HFE(max) = 10000 ;; Package = MT-3-A1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SB1504 datasheet File size : 162 kB
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Datasheet text preview:
Power Transistors
2SB1504
Silicon PNP epitaxial planar type darlington
Unit: mm
For power switching
· High forward current transfer ratio hFE · High-speed switching · Allowing automatic insertion with radial taping
3.8±0.2 10.8±0.2
7.5±0.2
4.5±0.2
0.65±0.1 2.5±0.1
0.85±0.1 1.0±0.1 0.8 C
90°
0.8 C
16.0±1.0
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg Rating -5 0 -5 0 -7 -8 -1 2 1.5 150 -55 to +150 Unit V V V A A W °C °C
0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2
0.5±0.1 0.8 C 1 2 3 2.05±0.2
0.4±0.1
2.5±0.2
2.5±0.2
1: Emitter 2: Collector 3: Base MT-3-A1 Package
Internal Connection
C B
E
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol V CEO ICBO IEBO hF E 1 * h FE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time V CE(sat) V BE(sat) fT to n tstg tf Conditions IC = -30 mA, IB = 0 VCB = -50 V, IE = 0 VEB = -7 V, IC = 0 VCE = -3 V, IC = -4 A VCE = -3 V, IC = -8 A IC = -4 A, IB = -8 mA IC = -4 A, IB = -8 mA VCB = -10 V, IE = 0.5 A, f = 200 MHz IC = -4 A, IB1 = -8 mA, IB2 = 8 mA VCC = -50 V 20 0.5 2.0 1.0 1 000 500 -1.5 -2.0 V V MHz µs µs µs Min -5 0 -100 -2 10 000 Typ Max Unit V µA mA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 P 1 000 to 2 500 Q R
2 000 to 5 000 4 000 to 10 000
Publication date: April 2003
SJD00080BED
1
2SB1504
PC Ta
2.0 Without heat sink
-8
TC=25°C
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
-100
VCE(sat) IC
IC/IB=500
Collector power dissipation PC (W)
1.6
Collector current IC (A)
-6
1.2
IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA
-10
-4
25°C TC=100°C
0.8
-1
25°C
-2
0.2mA
0.4
0
0
40
80
120
160
0
0
-1
-2
-3
-4
-5
- 0.1 - 0.1
-1
-10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
-100
IC/IB=500
hFE IC
Collector output capacitance C (pF) (Common base, input open circuited) ob
105
VCE=3V
Cob VCB
104
IE=0 f=1MHz TC=25°C
Base-emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
TC=100°C
25°C
103
-10
TC=25°C 25°C 100°C
104
25°C
102
-1
103
10
- 0.1 - 0.1
-1
-10
102 - 0.1
-1
-10
1 - 0.1
-1
-10
-100
Collector current IC (A)
Collector current IC (A)
Collector-base voltage VCB (V)
Safe operation area
-100
Non repetitive pulse TC=25°C
Rth t
1 04 Without heat sink
Thermal resistance Rth (°C/W)
Collector current IC (A)
-10
ICP IC t=1ms
1 03
102
-1
t=10ms t=300ms
10
- 0.1
1
- 0.01 -1
-10
-100
-1 000
10-1 10-4
10-3
10-2
10-1
1
10
1 02
1 03
1 04
Collector-emitter voltage VCE (V)
Time t (s)
2
SJD00080BED
Others parts begin by 2s
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