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Part: 2SB1537
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> PNP
-> Amplifier
Description: Silicon PNP Epitaxial Planer Typefor Low-frequency Amplification )
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SB1537 datasheet File size : 162 kB
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Datasheet text preview:
Transistor
2SB1537
Silicon PNP epitaxial planer type
For low-frequency amplification Complementar y to 2SD2357
Unit: mm
s Features
q q q
4.5±0.1 1.6±0.2
1.5±0.1
1.00.2
+0.1
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
2 . 6± 0 . 1
0.4max.
45°
0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15
4.00.20
0.4±0.04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25°C)
Ratings 10 10 5 1.2 1 1 150 55 ~ +150 1cm2 Unit V V V A A W °C °C
1:Base 2:Collector 3:Emitter
3
2
1
Symbol V CBO V CEO V EBO ICP IC PC* Tj T stg
marking
EIAJ:SC62 Mini Power Type Package
Marking symbol :
1L
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) fT C ob Conditions VCB = 7V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 100mA** IC = 500mA, IB = 5mA** VCB = 5V, IE = 50mA, f = 200MHz VCB = 5V, IE = 0, f = 1MHz 120 45
**
min
typ
max 1
10 10 5 200 800 0.15
Pulse measurement
2 . 5± 0 . 1
+0.25
Unit µA V V V
V MHz pF
1
Transistor
PC -- Ta
1.4
2SB1537
IC -- VCE
1.2 Ta=25°C 1.0 IB=1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA 1.0 25°C Ta=75°C 25°C 1.2 VCE=2V
IC -- VBE
Collector power dissipation PC (W)
1.2
Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion.
Collector current IC (A)
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
Collector current IC (A)
0.8
0.6
0.4
0.2
0 0 0.4 0.8 1.2 1.6 2.0 2.4
Ambient temperature Ta (°C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
10 3 1 Ta=75°C 25°C 25°C IC/IB=100 600
hFE -- IC
480 VCE=2V
fT -- I E
VCB=5V Ta=25°C f=200MHz
Forward current transfer ratio hFE
500 Ta=75°C 400 25°C 300 25°C
Transition frequency fT (MHz)
1 3 10
400
320
0.3 0.1 0.03 0.01
240
200
160
100
80
0.003 0.001 0.01 0.03 0.1 0.3
1
3
10
0 0.01 0.03 0.1 0.3
0 1 3 10 30 100 300 1000
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob -- VCB
120
Collector output capacitance Cob (pF)
100
IE=0 f=1MHz Ta=25°C
80
60
40
20
0 1
3
10
30
100
Collector to base voltage VCB (V)
2
Others parts begin by 2s
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