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Part: 2SB1548
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
-> General Purpose
-> PNP
Description: Silicon PNP Epitaxial Planar Type ( For Power Amplification )
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SB1548 datasheet File size : 162 kB
Request For quote: Find where to buy 2SB1548
Datasheet text preview:
Power Transistors
2SB1548, 2SB1548A
Silicon PNP epitaxial planar type
For power amplification Complementar y to 2SD2374 and 2SD2374A
s Features
q q q
Unit: mm
15.0±0.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB1548 2SB1548A 2SB1548 Symbol V CBO V CEO V EBO ICP IC PC Tj T stg
(TC=25°C)
Ratings 60 80 60 80 5 5 3 25 2 150 55 to +150 Unit V
3.2±0.1
1 3 . 7± 0 . 2 4 . 2± 0 . 2
1.4±0.2 1.6±0.2 0.8±0.1 2.54±0.3 3 5.08±0.5
3.0±0.5
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw
9.9±0.3
4.6±0.2 2.9±0.2
2.6±0.1
emitter voltage 2SB1548A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V
0.55±0.15
1
2
A A W °C °C
1:Base 2:Collector 3:Emitter TO220D Full Pack Package
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1548 2SB1548A 2SB1548 2SB1548A 2SB1548 2SB1548A
(TC=25°C)
Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf IC = 1A, IB1 = 0.1A, IB2 = 0.1A Conditions VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE = 10V, IC = 0.5A, f = 10MHz 30 0.5 1.2 0.3 60 80 70 10 1.8 1.2 V V MHz µs µs µs 250 V min typ max 200 200 300 300 1 Unit µA µA mA
Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE1
Rank classification
Q 70 to 150 P 120 to 250
Rank h FE1
Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification.
1
Power Transistors
PC -- Ta
40 6 (1) TC=Ta (2) Without heat sink (PC=2W) TC=25°C
2SB1548, 2SB1548A
IC -- VCE
8 7 5 VCE=4V TC=25°C
IC -- VBE
Collector power dissipation PC (W)
36 32 28 (1) 24 20 16 12 8 4 0 0 20 (2)
Collector current IC (A)
Collector current IC (A)
6 5 4 3 2 1 0
4
IB=100mA 80mA
3
60mA 40mA 30mA
2
20mA 16mA 12mA 8mA 4mA
1
0 40 60 80 100 120 140 160 0 2 4 6 8 10 12
0
0.2 0.4 0.6 0.8 1.0
1.2
Ambient temperature Ta (°C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
10 3 1 IC/IB=10 TC=25°C 10000
hFE -- IC
1000 VCE=4V TC=25°C 300 100 30 10 3 1 0.3
fT -- IC
VCE=10V f=10MHz TC=25°C
Forward current transfer ratio hFE
1000 300 100 30 10 3 1 0.01 0.03 0.1 0.3
0.3 0.1 0.03 0.01
0.003 0.001 0.01 0.03 0.1 0.3
Transition frequency fT (MHz)
1 3 10
3000
1
3
10
0.1 0.01 0.03 0.1 0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Area of safe operation (ASO)
100 30 103 Non repetitive pulse TC=25°C
R th(t) -- t
(1) Without heat sink (2) With a 100 × 80 × t2mm Al heat sink (1) (2) 10
Thermal resistance Rth(t) (°C/W)
Collector current IC (A)
102
10 3 1
ICP IC DC t=1ms 10ms
0.3 0.1 0.03 0.01 1
1
101
3
10
30
100 300 1000
102 104
103
102
101
1
10
102
103
104
Collector to emitter voltage VCE
(V)
Time t (s)
2
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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