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Part: 2SB1548A
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = -80 ;; I<SUB>C</SUB>(A) = -3 ;; HFE(min) = 70 ;; HFE(max) = 250 ;; Package = TO-220D-A1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SB1548A datasheet File size : 162 kB
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Datasheet text preview:
Power Transistors
2SB1548A
Silicon PNP epitaxial planar type
For power amplification Complementary to 2SD2374A Features
· High forward current transfer ratio hFE which has satisfactory linearity · Low collector-emitter saturation voltage VCE(sat) · Full-pack package which can be installed to the heat sink with one screw
Unit: mm
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
13.7±0.2 4.2±0.2 Solder Dip
15.0±0.5
3.2±0.1
1.4±0.2 1.6±0.2 0.8±0.1
2.6±0.1
0.55±0.15
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Tj Tstg TC = 25°C Symbol V CBO V CEO V EBO IC ICP PC Rating -8 0 -8 0 -5 -3 -5 25 2 150 -55 to +150 °C °C Unit V
2.54±0.30 5.08±0.50 1 2 3
V V A A W
1: Base 2: Collector 3: Emitter TO-220D-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol V CEO VBE ICES ICEO IEBO hF E 1 * h FE2 Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time V CE(sat) fT to n tstg tf Conditions IC = -30 mA, IB = 0 VCE = -4 V, IC = -3 A VCE = -80 V, VBE = 0 VCE = -60 V, IB = 0 VEB = -5 V, IC = 0 VCE = -4 V, IC = -1 A VCE = -4 V, IC = -3 A IC = -3 A, IB = - 0.375 A VCE = -10 V, IC = - 0.5 A, f = 10 MHz IC = -1 A, IB1 = - 0.1 A, IB2 = 0.1 A VCC = -50 V 30 0.5 1.2 0.3 70 10 -1.2 V MHz µs µs µs Min -8 0 -1.8 -200 -300 -1 250 Typ Max Unit V V µA µA mA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 70 to 150 P 120 to 250
Publication date: April 2003
SJD00081BED
1
2SB1548A
PC Ta
40
-6
(1)TC=Ta (2)Without heat sink (PC=2W)
IC VCE
-8
TC=25°C
IC VBE
VCE=4V TC=25°C
Collector power dissipation PC (W)
32
-5
IB=100mA 80mA
(1) 24
-4
-3
60mA 40mA 30mA
Collector current IC (A)
Collector current IC (A)
-6
-4
16
-2
20mA 16mA 12mA 8mA 4mA
-2
8 (2) 0
-1
0
0
40
80
120
160
0
-2
-4
-6
-8
-10
-12
0
0
- 0.2 - 0.4 - 0.6 - 0.8 -1.0
-1.2
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-10
IC/IB=10 TC=25°C
hFE IC
104
VCE=4V TC=25°C
fT I C
1 000
VCE=10V f=10MHz TC=25°C
Forward current transfer ratio hFE
-1
103
Transition frequency fT (MHz)
- 0.1 -1 -10
100
- 0.1
102
10
- 0.01
10
1
- 0.001 - 0.01
- 0.1
-1
-10
1 - 0.01
0.1 - 0.01
- 0.1
-1
-10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Safe operation area
-100
Non repetitive pulse TC=25°C
Rth t
103 (1)Without heat sink (2)With a 100×80×t2mm Al heat sink (1) (2) 10
Thermal resistance Rth (°C/W)
-1 000
Collector current IC (A)
-10
ICP IC t=1ms DC t=10ms
102
-1
1
- 0.1
10-1
- 0.01 -1
-10
-100
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Collector-emitter voltage VCE (V)
Time t (s)
2
SJD00081BED
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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