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Part: 2SB1554
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
-> General Purpose
-> PNP
Description: Silicon PNP Epitaxial Planar Type ( For Power Amplification )
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SB1554 datasheet File size : 162 kB
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Datasheet text preview:
Power Transistors
2SB1554
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
s Features
13.0±0.2 4.2±0.2
5.0±0.1 10.0±0.2 1.0
q q
High forward current transfer ratio hFE which has satisfactory linearity Allowing automatic insertion with radial taping (TC=25°C)
90°
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC IB PC Tj T stg
2.5±0.2
1.2±0.1
C1.0 2.25±0.2
18.0±0.5 Solder Dip
Ratings 60 60 20 8 4 2 15 2 150 55 to +150
Unit V V V A A A W °C °C
0.35±0.1
0.65±0.1 1.05±0.1 0.55±0.1
0.55±0.1
C1.0
123
2.5±0.2
2.5±0.2
1:Base 2:Collector 3:Emitter MT4 Type Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h
(TC=25°C)
Symbol ICBO ICEO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 60V, IE = 0 VCE = 50V, IB = 0 VEB = 15V, IC = 0 IC = 10mA, IB = 0 VCE = 4V, IC = 0.8A VCE = 4V, IC = 2A IC = 2A, IB = 100mA IC = 2A, IB = 100mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 2A, IB1 = 100mA, IB2 = 100mA, VCC = 50V 25 0.4 0.6 0.25 60 80 30 1.0 1.5 V V MHz µs µs µs 400 min typ max 10 50 10 Unit µA µA µA V
FE1
Rank classification
Q 80 to 160 P 120 to 240 O 200 to 400
Rank h FE1
1
Power Transistors
PC -- Ta
20 4.0 (1) TC=Ta (2) Without heat sink (PC=2.0W) 15 TC=25°C 3.5 IB=50mA 45mA 40mA 35mA 30mA 2.5 2.0 1.5 1.0 5mA 25mA 20mA 15mA 10mA
2SB1554
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=20 30 10 3 1
VCE(sat) -- IC
Collector power dissipation PC (W)
Collector current IC (A)
3.0
(1) 10
0.3 0.1 0.03 TC=100°C 25°C 25°C
5
(2) 0 0 20 40 60 80 100 120 140 160
0.5 0 0 2 4 6 8 10 12 14 16
0.01 0.01 0.03 0.1 0.3
1
3
10
Ambient temperature Ta (°C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100 105 IC/IB=20 30 10 3 1 TC = 2 5 ° C 25°C 100°C
hFE -- IC
1000 VCE=4V 300 100 30 10 3 1 0.3 1 0.001
fT -- IC
VCE=10V f=1MHz TC=25°C
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
104
103 TC=100°C 102 25°C
25°C
0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3
10
Transition frequency fT (MHz)
10
1
3
10
0.01
0.1
1
0.1 0.01 0.03 0.1 0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob -- VCB
1 04 100 IE=0 f=1MHz TC =25°C 1 03 30
ton, tstg, tf -- IC
Pulsed tw=1ms Duty cycle=1% IC/IB=20 (IB1=IB2) VCC=50V TC=25°C
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25°C
Collector output capacitance Cob (pF)
Switching time ton,tstg,tf (µs)
Collector current IC (A)
10 3 1 ton 0.3 tf 0.1 0.03 tstg
10 3 1
ICP t=1ms IC 10ms DC
1 02
0.3 0.1 0.03 0.01 1
10
1 0.1 0.3
0.01 1 3 10 30 100 0 1 2 3 4 5
3
10
30
100 300 1000
Collector to base voltage VCB (V)
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Rth(t) -- t
10000 Note: Rth was measured at Ta=25°C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink
2SB1554
Thermal resistance Rth(t) (°C/W)
1000
100 (1) (2) 10
1
0.1 104
103
102
101
1
10
102
103
104
Time t (s)
3
Others parts begin by 2s
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