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Part: 2SB710
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = -25 ;; I<SUB>C</SUB>(A) = -0.5 ;; HFE(min) = 85 ;; HFE(max) = 340 ;; Package = Mini3-G1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SB710 datasheet File size : 179 kB
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Datasheet text preview:
Transistors
2SB0710 (2SB710), 2SB0710A (2SB710A)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Features
· Large collector current IC · Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing
Unit: mm
0 10 0.40+0..05 0 10 0.16+0..06
3
0 25 1.50+0..05 02 2.8+0..3
1
2
(0.65)
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SB0710 2SB0710A V CEO V EBO IC ICP PC Tj Tstg Symbol V CBO Rating -3 0 -6 0 -2 5 -5 0 -5 - 0.5 -1 200 150 -55 to +150 V A A mW °C °C V Unit V
10°
(0.95) (0.95) 1.9±0.1
0 20 2.90+0..05
02 1.1+0..1
Collector-emitter voltage 2SB0710 (Base open) 2SB0710A
03 1.1+0..1
Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
Marking Symbol: · 2SB0710: C · 2SB0710A: D
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SB0710 2SB0710A 2SB0710 2SB0710A V EBO ICBO h FE1
*2
Symbol V CBO V CEO
Conditions IC = -10 µA, IE = 0 IC = -10 mA, IB = 0 IE = -10 µA, IC = 0 VCB = -20 V, IE = 0 VCE = -10 V, IC = -150 mA VCE = -10 V, IC = -500 mA IC = -300 mA, IB = -30 mA IC = -300 mA, IB = -30 mA VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz
Min -3 0 -6 0 -2 5 -5 0 -5
Typ
0 to 0.1
Max
Unit V
V
Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio
*1
V - 0.1 µA - 0.35 - 0.60 -1.1 200 6 15 -1.5 V V MHz pF
85 40
340
h FE2 Collector-emitter saturation voltage *1 Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited)
*1
V CE(sat) V BE(sat) fT Co b
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1 : Pulse measurement *2 : Rank classification Product of no-rank is not Rank Q R S No-rank c l a s s i f i e d and have no hFE1 85 to 170 120 to 240 170 to 340 85 to 340 marking symbol for rank. 2SB0710 CQ CR CS C Marking symbol 2SB0710A DQ DR DS D Note) The part numbers in the parenthesis show conventional part number.
Publication date: May 2003 SJC00048CED
0.4±0.2
5°
1
2SB0710, 2SB0710A
PC Ta
240 -1 200
IC VCE
Ta = 25°C -800 -700
IC I B
VCE = -10 V Ta = 25°C
Collector power dissipation PC (mW)
200
-1 000
Collector current IC (mA)
160
-800
IB = -10 mA -9 mA -8 mA -7 mA -6 mA -5 mA -4 mA -3 mA -2 mA -1 mA
120
-600
80
-400
40
-200
0
0 0 40 80 120 160
Collector current IC (mA)
-600 -500 -400 -300 -200 -100 0 -2 -4 -6 -8 -10
0
2
4
6
8
10
12
0
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base current IB (mA)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-10
VBE(sat) IC
-100
hFE IC
600 VCE = -10 V
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 10
IC / IB = 10
-1 Ta=75°C -25°C
-10
Forward current transfer ratio hFE
500
400
- 0.1
25°C
25°C -1 Ta = -25°C 75°C
300 Ta = 75°C 200 25°C -25°C
- 0.01
- 0.1
100
- 0.001 -1
-10
-100
-1 000
- 0.01 -1
-10
-100
-1 000
0 - 0.01
- 0.1
-1
-10
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (A)
fT I E
Collector output capacitance C (pF) (Common base, input open circuited) ob
240 VCB = -10 V Ta = 25°C 24
Cob VCB
Collector-emitter voltage (V) (Resistor between B and E) VCER
IE = 0 f = 1 MHz Ta = 25°C -120
VCER RBE
IC = -2 mA Ta = 25°C
Transition frequency fT (MHz)
200
20
-100
160
16
-80
120
12
-60 2SB0710A -40 2SB0710 -20
80
8
40
4
0
1
10
100
0 -1
-10
-100
0
1
10
100
1 000
Emitter current IE (mA)
Collector-base voltage VCB (V)
Base-emitter resistance RBE (k)
2
SJC00048CED
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